A novel derivative ellipsometric method for the study of the growth of thin films: Titanium

J.M.M. de Nijs, Arend van Silfhout

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Abstract

The growth of a titanium film at room temperature from an evaporation source on a silicon substrate covered by its native oxide layer is continuously monitored with an ellipsometer at three wavelengths. The momentary positions and the derivatives of the trajectories thus obtained in the (Δ, Ψ) plane can be used for uniquely determining the momentary thickness and the momentary dielectric constants of the layer at each of the wavelengths. The optical properties of the titanium, which reflect the film structure and defect rate, strongly depend upon the growth conditions; the top region of a film approximately 40 nm thick appears to contain more voids and lattice defects than the region near the substrate.
Original languageUndefined
Pages (from-to)1-12
JournalThin solid films
Volume173
Issue number1
DOIs
Publication statusPublished - 1989

Keywords

  • IR-70428

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