A Novel Silicon Electro-Optic Device for sensor applications

P. Le Minh, N.A. Akil, Hans Wallinga, P.H. Woerlee, Albert van den Berg, J. Holleman

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    3 Citations (Scopus)
    66 Downloads (Pure)


    Though R. Newman reported the avalanche breakdown light emission in a conventional p-n junction diode half a century ago, there are almost no successful applications of this phenomenon in industry. We report the realization of a novel silicon electro-optic device, explicitly the integration of light emitting diode antifuse and photodetector on a single silicon wafer by CMOS technology, and the first important results. The diode antifuse (called antifuse to the rest of this contribution) resembles a conventional diode but has a small size of a few tens of nanometers, which permits easy collection of all emitted photons
    Original languageUndefined
    Title of host publication2000 IEEE Annual Meeting Conference Proceedings
    Place of PublicationRio Grande
    ISBN (Print)10928081
    Publication statusPublished - 13 Nov 2000
    Event13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000 - Rio Grande, Puerto Rico
    Duration: 13 Nov 200016 Nov 2000
    Conference number: 13

    Publication series



    Conference13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000
    Abbreviated titleLEOS
    CountryPuerto Rico
    CityRio Grande


    • IR-17066
    • METIS-113952

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