A Novel Silicon Electro-Optic Device for sensor applications

P. Le Minh, N.A. Akil, Hans Wallinga, P.H. Woerlee, Albert van den Berg, J. Holleman

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    3 Citations (Scopus)
    51 Downloads (Pure)

    Abstract

    Though R. Newman reported the avalanche breakdown light emission in a conventional p-n junction diode half a century ago, there are almost no successful applications of this phenomenon in industry. We report the realization of a novel silicon electro-optic device, explicitly the integration of light emitting diode antifuse and photodetector on a single silicon wafer by CMOS technology, and the first important results. The diode antifuse (called antifuse to the rest of this contribution) resembles a conventional diode but has a small size of a few tens of nanometers, which permits easy collection of all emitted photons
    Original languageUndefined
    Title of host publication2000 IEEE Annual Meeting Conference Proceedings
    Place of PublicationRio Grande
    PublisherIEEE
    Pages523-524
    ISBN (Print)10928081
    DOIs
    Publication statusPublished - 13 Nov 2000
    Event13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000 - Rio Grande, Puerto Rico
    Duration: 13 Nov 200016 Nov 2000
    Conference number: 13

    Publication series

    Name
    PublisherIEEE
    Volume2

    Conference

    Conference13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000
    Abbreviated titleLEOS
    CountryPuerto Rico
    CityRio Grande
    Period13/11/0016/11/00

    Keywords

    • IR-17066
    • METIS-113952

    Cite this

    Le Minh, P., Akil, N. A., Wallinga, H., Woerlee, P. H., van den Berg, A., & Holleman, J. (2000). A Novel Silicon Electro-Optic Device for sensor applications. In 2000 IEEE Annual Meeting Conference Proceedings (pp. 523-524). Rio Grande: IEEE. https://doi.org/10.1109/LEOS.2000.893946