A Novel Silicon Electro-Optic Device for sensor applications

P. Le Minh; N.A. Akil; Hans Wallinga; P.H. Woerlee; Albert van den Berg; J. Holleman

doi:10.1109/LEOS.2000.893946

A Novel Silicon Electro-Optic Device for sensor applications

P. Le Minh
, N.A. Akil
, Hans Wallinga
, P.H. Woerlee
, Albert van den Berg
, J. Holleman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

178 Downloads (Pure)

Abstract

Though R. Newman reported the avalanche breakdown light emission in a conventional p-n junction diode half a century ago, there are almost no successful applications of this phenomenon in industry. We report the realization of a novel silicon electro-optic device, explicitly the integration of light emitting diode antifuse and photodetector on a single silicon wafer by CMOS technology, and the first important results. The diode antifuse (called antifuse to the rest of this contribution) resembles a conventional diode but has a small size of a few tens of nanometers, which permits easy collection of all emitted photons

Original language	English
Title of host publication	2000 IEEE Annual Meeting Conference Proceedings
Place of Publication	Rio Grande
Publisher	IEEE
Pages	523-524
ISBN (Print)	10928081
DOIs	https://doi.org/10.1109/LEOS.2000.893946
Publication status	Published - 13 Nov 2000
Event	13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000 - Rio Grande, Puerto Rico Duration: 13 Nov 2000 → 16 Nov 2000 Conference number: 13

Publication series

Name
Publisher	IEEE
Volume	2

Conference

Conference	13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000
Abbreviated title	LEOS
Country/Territory	Puerto Rico
City	Rio Grande
Period	13/11/00 → 16/11/00

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10.1109/LEOS.2000.893946

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title = "A Novel Silicon Electro-Optic Device for sensor applications",

abstract = "Though R. Newman reported the avalanche breakdown light emission in a conventional p-n junction diode half a century ago, there are almost no successful applications of this phenomenon in industry. We report the realization of a novel silicon electro-optic device, explicitly the integration of light emitting diode antifuse and photodetector on a single silicon wafer by CMOS technology, and the first important results. The diode antifuse (called antifuse to the rest of this contribution) resembles a conventional diode but has a small size of a few tens of nanometers, which permits easy collection of all emitted photons",

author = "\{Le Minh\}, P. and N.A. Akil and Hans Wallinga and P.H. Woerlee and \{van den Berg\}, Albert and J. Holleman",

year = "2000",

month = nov,

day = "13",

doi = "10.1109/LEOS.2000.893946",

language = "English",

isbn = "10928081",

publisher = "IEEE",

pages = "523--524",

booktitle = "2000 IEEE Annual Meeting Conference Proceedings",

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note = "13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000, LEOS ; Conference date: 13-11-2000 Through 16-11-2000",

}

Le Minh, P, Akil, NA, Wallinga, H, Woerlee, PH, van den Berg, A & Holleman, J 2000, A Novel Silicon Electro-Optic Device for sensor applications. in 2000 IEEE Annual Meeting Conference Proceedings. IEEE, Rio Grande, pp. 523-524, 13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000, Rio Grande, Puerto Rico, 13/11/00. https://doi.org/10.1109/LEOS.2000.893946

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T1 - A Novel Silicon Electro-Optic Device for sensor applications

AU - Le Minh, P.

AU - Akil, N.A.

AU - Wallinga, Hans

AU - Woerlee, P.H.

AU - van den Berg, Albert

AU - Holleman, J.

N1 - Conference code: 13

PY - 2000/11/13

Y1 - 2000/11/13

N2 - Though R. Newman reported the avalanche breakdown light emission in a conventional p-n junction diode half a century ago, there are almost no successful applications of this phenomenon in industry. We report the realization of a novel silicon electro-optic device, explicitly the integration of light emitting diode antifuse and photodetector on a single silicon wafer by CMOS technology, and the first important results. The diode antifuse (called antifuse to the rest of this contribution) resembles a conventional diode but has a small size of a few tens of nanometers, which permits easy collection of all emitted photons

AB - Though R. Newman reported the avalanche breakdown light emission in a conventional p-n junction diode half a century ago, there are almost no successful applications of this phenomenon in industry. We report the realization of a novel silicon electro-optic device, explicitly the integration of light emitting diode antifuse and photodetector on a single silicon wafer by CMOS technology, and the first important results. The diode antifuse (called antifuse to the rest of this contribution) resembles a conventional diode but has a small size of a few tens of nanometers, which permits easy collection of all emitted photons

U2 - 10.1109/LEOS.2000.893946

DO - 10.1109/LEOS.2000.893946

M3 - Conference contribution

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BT - 2000 IEEE Annual Meeting Conference Proceedings

PB - IEEE

CY - Rio Grande

T2 - 13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000

Y2 - 13 November 2000 through 16 November 2000

ER -

A Novel Silicon Electro-Optic Device for sensor applications

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