A novel SPICE macromodel of BJTs including the temperature dependence of high-injection effects

V. D'Alessandro*, N. Nenadović, F. Tamigi, N. Rinaldi, L.K. Nanver, J.W. Slotboom

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

8 Citations (Scopus)

Abstract

In this work a novel steady-state ABM-based BJT macromodel is presented, which can be successfully adopted for accurately describing the electrothermal behavior of devices consisting of several elementary transistors connected in parallel. As an enhancement with respect to other approaches, the temperature dependence of the onset of high-injection effects is taken into account, which implies a complete description of possible electrothermal stabilizing mechanisms at high-current regimes.

Original languageEnglish
Title of host publication 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)
Pages253-256
Number of pages4
DOIs
Publication statusPublished - 19 Jul 2004
Externally publishedYes
Event24th International Conference on Microelectronics, MIEL 2004 - University of Nis, Nis, Serbia
Duration: 16 May 200419 May 2004
Conference number: 24

Conference

Conference24th International Conference on Microelectronics, MIEL 2004
Abbreviated titleMIEL 2004
CountrySerbia
CityNis
Period16/05/0419/05/04

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    D'Alessandro, V., Nenadović, N., Tamigi, F., Rinaldi, N., Nanver, L. K., & Slotboom, J. W. (2004). A novel SPICE macromodel of BJTs including the temperature dependence of high-injection effects. In 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) (pp. 253-256) https://doi.org/10.1109/ICMEL.2004.1314609