A novel vertical DMOS transistor in SOA technology for RF-power applications

N. Nenadović, V. Cuoco, S. J.C.H. Theeuwen, L. K. Nanver, H. F.F. Jos, J. W. Slotboom

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)

Abstract

A novel SOI vertical DMOS transistor on glass for RF power applications is proposed. The device has the same advantages as conventional LDMOS transistors over bipolar transistors with respect to the linearity and efficiency for the high-power, high-frequency applications and adds the advantages of silicon-on-anything technology for the integration with high quality passive components. The gate oxide degradation due to hot carrier generation is inherently eliminated. The metalization on the wafer back includes copper electroplating. A thick copper layer on the wafer back serves as an excellent heat spreader and heat sink. Moreover, it can be used to avoid debiasing due to voltage drops over the metalization. The device performance has been investigated using DC and AC MEDICI simulations and the "Smoothie" database model for FET devices. A device with a breakdown of more than 80V, an fTmaxof 8 GHz, a maximum current of more than 10-4A/μm at VDS=26 V and an RON of 4m Ωcm2 is demonstrated.

Original languageEnglish
Title of host publication2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
PublisherIEEE Computer Society Press
Pages159-162
Number of pages4
Volume1
ISBN (Print)9780780372351
DOIs
Publication statusPublished - 1 Jan 2002
Externally publishedYes
Event23rd International Conference on Microelectronics, MIEL 2002 - Nis, Serbia
Duration: 12 May 200215 May 2002
Conference number: 23

Conference

Conference23rd International Conference on Microelectronics, MIEL 2002
Abbreviated titleMIEL 2002
CountrySerbia
CityNis
Period12/05/0215/05/02

Fingerprint

Service oriented architecture (SOA)
Transistors
Copper
Spreaders
Hot carriers
Bipolar transistors
Heat sinks
Electroplating
Field effect transistors
Degradation
Glass
Silicon
Oxides
Voltage drop
Hot Temperature

Cite this

Nenadović, N., Cuoco, V., Theeuwen, S. J. C. H., Nanver, L. K., Jos, H. F. F., & Slotboom, J. W. (2002). A novel vertical DMOS transistor in SOA technology for RF-power applications. In 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings (Vol. 1, pp. 159-162). [1003164] IEEE Computer Society Press. https://doi.org/10.1109/MIEL.2002.1003164
Nenadović, N. ; Cuoco, V. ; Theeuwen, S. J.C.H. ; Nanver, L. K. ; Jos, H. F.F. ; Slotboom, J. W. / A novel vertical DMOS transistor in SOA technology for RF-power applications. 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. Vol. 1 IEEE Computer Society Press, 2002. pp. 159-162
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Nenadović, N, Cuoco, V, Theeuwen, SJCH, Nanver, LK, Jos, HFF & Slotboom, JW 2002, A novel vertical DMOS transistor in SOA technology for RF-power applications. in 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. vol. 1, 1003164, IEEE Computer Society Press, pp. 159-162, 23rd International Conference on Microelectronics, MIEL 2002, Nis, Serbia, 12/05/02. https://doi.org/10.1109/MIEL.2002.1003164

A novel vertical DMOS transistor in SOA technology for RF-power applications. / Nenadović, N.; Cuoco, V.; Theeuwen, S. J.C.H.; Nanver, L. K.; Jos, H. F.F.; Slotboom, J. W.

2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. Vol. 1 IEEE Computer Society Press, 2002. p. 159-162 1003164.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Nenadović N, Cuoco V, Theeuwen SJCH, Nanver LK, Jos HFF, Slotboom JW. A novel vertical DMOS transistor in SOA technology for RF-power applications. In 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. Vol. 1. IEEE Computer Society Press. 2002. p. 159-162. 1003164 https://doi.org/10.1109/MIEL.2002.1003164