A novel vertical DMOS transistor in SOA technology for RF-power applications

N. Nenadović; V. Cuoco; S. J.C.H. Theeuwen; L. K. Nanver; H. F.F. Jos; J. W. Slotboom

doi:10.1109/MIEL.2002.1003164

A novel vertical DMOS transistor in SOA technology for RF-power applications

N. Nenadović, V. Cuoco, S. J.C.H. Theeuwen, L. K. Nanver, H. F.F. Jos, J. W. Slotboom

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

Abstract

A novel SOI vertical DMOS transistor on glass for RF power applications is proposed. The device has the same advantages as conventional LDMOS transistors over bipolar transistors with respect to the linearity and efficiency for the high-power, high-frequency applications and adds the advantages of silicon-on-anything technology for the integration with high quality passive components. The gate oxide degradation due to hot carrier generation is inherently eliminated. The metalization on the wafer back includes copper electroplating. A thick copper layer on the wafer back serves as an excellent heat spreader and heat sink. Moreover, it can be used to avoid debiasing due to voltage drops over the metalization. The device performance has been investigated using DC and AC MEDICI simulations and the "Smoothie" database model for FET devices. A device with a breakdown of more than 80V, an f_Tmaxof 8 GHz, a maximum current of more than 10^-4A/μm at V_DS=26 V and an R_ON of 4m Ωcm² is demonstrated.

Original language	English
Title of host publication	2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
Publisher	IEEE
Pages	159-162
Number of pages	4
Volume	1
ISBN (Print)	9780780372351
DOIs	https://doi.org/10.1109/MIEL.2002.1003164
Publication status	Published - 1 Jan 2002
Externally published	Yes
Event	23rd International Conference on Microelectronics, MIEL 2002 - Nis, Serbia Duration: 12 May 2002 → 15 May 2002 Conference number: 23

Conference

Conference	23rd International Conference on Microelectronics, MIEL 2002
Abbreviated title	MIEL 2002
Country/Territory	Serbia
City	Nis
Period	12/05/02 → 15/05/02

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10.1109/MIEL.2002.1003164

Cite this

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title = "A novel vertical DMOS transistor in SOA technology for RF-power applications",

abstract = "A novel SOI vertical DMOS transistor on glass for RF power applications is proposed. The device has the same advantages as conventional LDMOS transistors over bipolar transistors with respect to the linearity and efficiency for the high-power, high-frequency applications and adds the advantages of silicon-on-anything technology for the integration with high quality passive components. The gate oxide degradation due to hot carrier generation is inherently eliminated. The metalization on the wafer back includes copper electroplating. A thick copper layer on the wafer back serves as an excellent heat spreader and heat sink. Moreover, it can be used to avoid debiasing due to voltage drops over the metalization. The device performance has been investigated using DC and AC MEDICI simulations and the {"}Smoothie{"} database model for FET devices. A device with a breakdown of more than 80V, an fTmaxof 8 GHz, a maximum current of more than 10-4A/μm at VDS=26 V and an RON of 4m Ωcm2 is demonstrated.",

author = "N. Nenadovi{\'c} and V. Cuoco and Theeuwen, {S. J.C.H.} and Nanver, {L. K.} and Jos, {H. F.F.} and Slotboom, {J. W.}",

year = "2002",

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doi = "10.1109/MIEL.2002.1003164",

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Nenadović, N, Cuoco, V, Theeuwen, SJCH, Nanver, LK, Jos, HFF & Slotboom, JW 2002, A novel vertical DMOS transistor in SOA technology for RF-power applications. in 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. vol. 1, 1003164, IEEE, pp. 159-162, 23rd International Conference on Microelectronics, MIEL 2002, Nis, Serbia, 12/05/02. https://doi.org/10.1109/MIEL.2002.1003164

A novel vertical DMOS transistor in SOA technology for RF-power applications. / Nenadović, N.; Cuoco, V.; Theeuwen, S. J.C.H. et al.
2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. Vol. 1 IEEE, 2002. p. 159-162 1003164.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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A novel vertical DMOS transistor in SOA technology for RF-power applications

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