A novel write-scheme for data integrity in memristor-based crossbar memories

A.G. Ruotolo; M. Ottavi; S. Pontarelli; F. Lombardi

doi:10.1145/2765491.2765521

A novel write-scheme for data integrity in memristor-based crossbar memories

A.G. Ruotolo, M. Ottavi, S. Pontarelli, F. Lombardi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

Abstract

The memristor is one among the most promising emerging technologies for enabling a new generation of Non Volatile Memories. The memristor operates faster than a Phase Change Memory (PCRAM) and has a simpler structure than a magnetic memory (MRAM), while making possible the design of cross-point structures in crossbars at very high density. The presence of sneak path currents however causes an increase in power consumption and a reduction in data integrity and performance. To overcome this issue a novel write method is proposed to reduce the effects of sneak paths. Extensive SPICE simulations are provided to evidence the advantages of the proposed method.

Original language	English
Title of host publication	Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012
Pages	168-173
DOIs	https://doi.org/10.1145/2765491.2765521
Publication status	Published - 2012
Externally published	Yes
Event	IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012 - Amsterdam, Netherlands Duration: 4 Jul 2012 → 6 Jul 2012

Conference

Conference	IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012
Abbreviated title	NANOARCH 2012
Country/Territory	Netherlands
City	Amsterdam
Period	4/07/12 → 6/07/12

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10.1145/2765491.2765521

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title = "A novel write-scheme for data integrity in memristor-based crossbar memories",

abstract = "The memristor is one among the most promising emerging technologies for enabling a new generation of Non Volatile Memories. The memristor operates faster than a Phase Change Memory (PCRAM) and has a simpler structure than a magnetic memory (MRAM), while making possible the design of cross-point structures in crossbars at very high density. The presence of sneak path currents however causes an increase in power consumption and a reduction in data integrity and performance. To overcome this issue a novel write method is proposed to reduce the effects of sneak paths. Extensive SPICE simulations are provided to evidence the advantages of the proposed method.",

author = "A.G. Ruotolo and M. Ottavi and S. Pontarelli and F. Lombardi",

year = "2012",

doi = "10.1145/2765491.2765521",

language = "English",

pages = "168--173",

booktitle = "Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012",

note = "IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012, NANOARCH 2012 ; Conference date: 04-07-2012 Through 06-07-2012",

}

Ruotolo, AG, Ottavi, M, Pontarelli, S & Lombardi, F 2012, A novel write-scheme for data integrity in memristor-based crossbar memories. in Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012. pp. 168-173, IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012, Amsterdam, Netherlands, 4/07/12. https://doi.org/10.1145/2765491.2765521

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AU - Ruotolo, A.G.

AU - Ottavi, M.

AU - Pontarelli, S.

AU - Lombardi, F.

PY - 2012

Y1 - 2012

N2 - The memristor is one among the most promising emerging technologies for enabling a new generation of Non Volatile Memories. The memristor operates faster than a Phase Change Memory (PCRAM) and has a simpler structure than a magnetic memory (MRAM), while making possible the design of cross-point structures in crossbars at very high density. The presence of sneak path currents however causes an increase in power consumption and a reduction in data integrity and performance. To overcome this issue a novel write method is proposed to reduce the effects of sneak paths. Extensive SPICE simulations are provided to evidence the advantages of the proposed method.

AB - The memristor is one among the most promising emerging technologies for enabling a new generation of Non Volatile Memories. The memristor operates faster than a Phase Change Memory (PCRAM) and has a simpler structure than a magnetic memory (MRAM), while making possible the design of cross-point structures in crossbars at very high density. The presence of sneak path currents however causes an increase in power consumption and a reduction in data integrity and performance. To overcome this issue a novel write method is proposed to reduce the effects of sneak paths. Extensive SPICE simulations are provided to evidence the advantages of the proposed method.

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U2 - 10.1145/2765491.2765521

DO - 10.1145/2765491.2765521

M3 - Conference contribution

SP - 168

EP - 173

BT - Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012

T2 - IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012

Y2 - 4 July 2012 through 6 July 2012

ER -

A novel write-scheme for data integrity in memristor-based crossbar memories

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