A passivating contact for silicon solar cells formed during a single firing thermal annealing

Andrea Ingenito (Corresponding Author), Gizem Nogay, Quentin Jeangros, Esteban Rucavado, Christophe Allebé, Santhana Eswara, Nathalie Valle, Tom Wirtz, Jörg Horzel, Takashi Koida, Monica Morales-masis, Matthieu Despeisse, Franz-josef Haug, Philipp Löper, Christophe Ballif

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)

Abstract

Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-silicon solar cells. Their realization and integration into a convenient process flow have become crucial research objectives. Here, we report an alternative passivating contact that is formed in a single post-deposition annealing step called ‘firing’, an essential step for current solar cell manufacturing. As firing is a fast (<10 s) and high-temperature (>750 °C) anneal, the required microstructural and electrical properties of the passivating contact are stringent. We demonstrate that tuning the carbon content of boron-doped silicon-based thin films inhibits firing-induced layer delamination without preventing a partial crystallization. The latter promotes charge-carrier selectivity, even in the absence of a diffused doped region beyond the oxide, by inducing hole accumulation near the wafer surface. We fabricated proof-of-concept solar cells employing the developed technology, demonstrating an open circuit voltage of 698 mV and an efficiency of 21.9%, and show how it could be a drop-in replacement for today’s rear contacts based on locally opened dielectric passivation stacks.
Original languageEnglish
Pages (from-to)800-808
JournalNature energy
Volume3
Issue number9
DOIs
Publication statusPublished - 1 Sep 2018
Externally publishedYes

Fingerprint

Silicon solar cells
Solar cells
Annealing
Boron
Silicon
Open circuit voltage
Crystallization
Charge carriers
Delamination
Passivation
Oxides
Conversion efficiency
Electric properties
Carbon
Tuning
Crystalline materials
Thin films
Hot Temperature

Cite this

Ingenito, A., Nogay, G., Jeangros, Q., Rucavado, E., Allebé, C., Eswara, S., ... Ballif, C. (2018). A passivating contact for silicon solar cells formed during a single firing thermal annealing. Nature energy, 3(9), 800-808. https://doi.org/10.1038/s41560-018-0239-4
Ingenito, Andrea ; Nogay, Gizem ; Jeangros, Quentin ; Rucavado, Esteban ; Allebé, Christophe ; Eswara, Santhana ; Valle, Nathalie ; Wirtz, Tom ; Horzel, Jörg ; Koida, Takashi ; Morales-masis, Monica ; Despeisse, Matthieu ; Haug, Franz-josef ; Löper, Philipp ; Ballif, Christophe. / A passivating contact for silicon solar cells formed during a single firing thermal annealing. In: Nature energy. 2018 ; Vol. 3, No. 9. pp. 800-808.
@article{a72ec13b329f4d6b99ee8b366c1b5449,
title = "A passivating contact for silicon solar cells formed during a single firing thermal annealing",
abstract = "Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-silicon solar cells. Their realization and integration into a convenient process flow have become crucial research objectives. Here, we report an alternative passivating contact that is formed in a single post-deposition annealing step called ‘firing’, an essential step for current solar cell manufacturing. As firing is a fast (<10 s) and high-temperature (>750 °C) anneal, the required microstructural and electrical properties of the passivating contact are stringent. We demonstrate that tuning the carbon content of boron-doped silicon-based thin films inhibits firing-induced layer delamination without preventing a partial crystallization. The latter promotes charge-carrier selectivity, even in the absence of a diffused doped region beyond the oxide, by inducing hole accumulation near the wafer surface. We fabricated proof-of-concept solar cells employing the developed technology, demonstrating an open circuit voltage of 698 mV and an efficiency of 21.9{\%}, and show how it could be a drop-in replacement for today’s rear contacts based on locally opened dielectric passivation stacks.",
author = "Andrea Ingenito and Gizem Nogay and Quentin Jeangros and Esteban Rucavado and Christophe Alleb{\'e} and Santhana Eswara and Nathalie Valle and Tom Wirtz and J{\"o}rg Horzel and Takashi Koida and Monica Morales-masis and Matthieu Despeisse and Franz-josef Haug and Philipp L{\"o}per and Christophe Ballif",
year = "2018",
month = "9",
day = "1",
doi = "10.1038/s41560-018-0239-4",
language = "English",
volume = "3",
pages = "800--808",
journal = "Nature energy",
issn = "2058-7546",
publisher = "Springer",
number = "9",

}

Ingenito, A, Nogay, G, Jeangros, Q, Rucavado, E, Allebé, C, Eswara, S, Valle, N, Wirtz, T, Horzel, J, Koida, T, Morales-masis, M, Despeisse, M, Haug, F, Löper, P & Ballif, C 2018, 'A passivating contact for silicon solar cells formed during a single firing thermal annealing' Nature energy, vol. 3, no. 9, pp. 800-808. https://doi.org/10.1038/s41560-018-0239-4

A passivating contact for silicon solar cells formed during a single firing thermal annealing. / Ingenito, Andrea (Corresponding Author); Nogay, Gizem; Jeangros, Quentin; Rucavado, Esteban; Allebé, Christophe; Eswara, Santhana; Valle, Nathalie; Wirtz, Tom; Horzel, Jörg; Koida, Takashi; Morales-masis, Monica; Despeisse, Matthieu; Haug, Franz-josef; Löper, Philipp; Ballif, Christophe.

In: Nature energy, Vol. 3, No. 9, 01.09.2018, p. 800-808.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - A passivating contact for silicon solar cells formed during a single firing thermal annealing

AU - Ingenito, Andrea

AU - Nogay, Gizem

AU - Jeangros, Quentin

AU - Rucavado, Esteban

AU - Allebé, Christophe

AU - Eswara, Santhana

AU - Valle, Nathalie

AU - Wirtz, Tom

AU - Horzel, Jörg

AU - Koida, Takashi

AU - Morales-masis, Monica

AU - Despeisse, Matthieu

AU - Haug, Franz-josef

AU - Löper, Philipp

AU - Ballif, Christophe

PY - 2018/9/1

Y1 - 2018/9/1

N2 - Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-silicon solar cells. Their realization and integration into a convenient process flow have become crucial research objectives. Here, we report an alternative passivating contact that is formed in a single post-deposition annealing step called ‘firing’, an essential step for current solar cell manufacturing. As firing is a fast (<10 s) and high-temperature (>750 °C) anneal, the required microstructural and electrical properties of the passivating contact are stringent. We demonstrate that tuning the carbon content of boron-doped silicon-based thin films inhibits firing-induced layer delamination without preventing a partial crystallization. The latter promotes charge-carrier selectivity, even in the absence of a diffused doped region beyond the oxide, by inducing hole accumulation near the wafer surface. We fabricated proof-of-concept solar cells employing the developed technology, demonstrating an open circuit voltage of 698 mV and an efficiency of 21.9%, and show how it could be a drop-in replacement for today’s rear contacts based on locally opened dielectric passivation stacks.

AB - Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-silicon solar cells. Their realization and integration into a convenient process flow have become crucial research objectives. Here, we report an alternative passivating contact that is formed in a single post-deposition annealing step called ‘firing’, an essential step for current solar cell manufacturing. As firing is a fast (<10 s) and high-temperature (>750 °C) anneal, the required microstructural and electrical properties of the passivating contact are stringent. We demonstrate that tuning the carbon content of boron-doped silicon-based thin films inhibits firing-induced layer delamination without preventing a partial crystallization. The latter promotes charge-carrier selectivity, even in the absence of a diffused doped region beyond the oxide, by inducing hole accumulation near the wafer surface. We fabricated proof-of-concept solar cells employing the developed technology, demonstrating an open circuit voltage of 698 mV and an efficiency of 21.9%, and show how it could be a drop-in replacement for today’s rear contacts based on locally opened dielectric passivation stacks.

U2 - 10.1038/s41560-018-0239-4

DO - 10.1038/s41560-018-0239-4

M3 - Article

VL - 3

SP - 800

EP - 808

JO - Nature energy

JF - Nature energy

SN - 2058-7546

IS - 9

ER -

Ingenito A, Nogay G, Jeangros Q, Rucavado E, Allebé C, Eswara S et al. A passivating contact for silicon solar cells formed during a single firing thermal annealing. Nature energy. 2018 Sep 1;3(9):800-808. https://doi.org/10.1038/s41560-018-0239-4