A pillar-shaped antifuse-based silicon chemical sensor and actuator

Alexeij Y. Kovalgin, J. Holleman, G. Iordache

    Research output: Contribution to journalArticleAcademicpeer-review

    5 Citations (Scopus)
    65 Downloads (Pure)

    Abstract

    We designed a silicon-processing compatible, simple, and cheap device operating at a power down to sub- W. It has a pillar-shaped structure with a nanoscopic (10–100 nm in size) conductive link (the so-called antifuse) created between two electrodes separated by a SiO2 layer. The device exhibits a diode-like behavior due to the depletion effects in the mono-silicon pillar. The device is capable of maintaining a microscopic hot-surface area of several hundreds degrees centigrade. The size of the hot area and its temperature can be manipulated by the sign of the applied bias. Two different heat-generation mechanisms (i.e., dissipation at a resistor and a non-radiative recombination of carriers) are proposed and modelled. Such a device can be used as a heat source, as a light source, and as a sensitive detector of light and heat. In this paper, we describe thermo-electrical properties of the fabricated devices and demonstrate their feasibility to perform as gas-, adsorption-, desorption sensors, and as units for activating chemisorption/decomposition of gaseous precursors, i.e., micro-reactors.
    Original languageUndefined
    Article number10.1109/JSEN.2006.888602
    Pages (from-to)18-27
    Number of pages10
    JournalIEEE sensors journal
    Volume7
    Issue number2/1
    DOIs
    Publication statusPublished - Apr 2007

    Keywords

    • EWI-9536
    • SC-ICS: Integrated Chemical Sensors
    • METIS-242079
    • IR-63975

    Cite this

    Kovalgin, Alexeij Y. ; Holleman, J. ; Iordache, G. / A pillar-shaped antifuse-based silicon chemical sensor and actuator. In: IEEE sensors journal. 2007 ; Vol. 7, No. 2/1. pp. 18-27.
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    abstract = "We designed a silicon-processing compatible, simple, and cheap device operating at a power down to sub- W. It has a pillar-shaped structure with a nanoscopic (10–100 nm in size) conductive link (the so-called antifuse) created between two electrodes separated by a SiO2 layer. The device exhibits a diode-like behavior due to the depletion effects in the mono-silicon pillar. The device is capable of maintaining a microscopic hot-surface area of several hundreds degrees centigrade. The size of the hot area and its temperature can be manipulated by the sign of the applied bias. Two different heat-generation mechanisms (i.e., dissipation at a resistor and a non-radiative recombination of carriers) are proposed and modelled. Such a device can be used as a heat source, as a light source, and as a sensitive detector of light and heat. In this paper, we describe thermo-electrical properties of the fabricated devices and demonstrate their feasibility to perform as gas-, adsorption-, desorption sensors, and as units for activating chemisorption/decomposition of gaseous precursors, i.e., micro-reactors.",
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    Kovalgin, AY, Holleman, J & Iordache, G 2007, 'A pillar-shaped antifuse-based silicon chemical sensor and actuator', IEEE sensors journal, vol. 7, no. 2/1, 10.1109/JSEN.2006.888602, pp. 18-27. https://doi.org/10.1109/JSEN.2006.888602

    A pillar-shaped antifuse-based silicon chemical sensor and actuator. / Kovalgin, Alexeij Y.; Holleman, J.; Iordache, G.

    In: IEEE sensors journal, Vol. 7, No. 2/1, 10.1109/JSEN.2006.888602, 04.2007, p. 18-27.

    Research output: Contribution to journalArticleAcademicpeer-review

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    T1 - A pillar-shaped antifuse-based silicon chemical sensor and actuator

    AU - Kovalgin, Alexeij Y.

    AU - Holleman, J.

    AU - Iordache, G.

    N1 - 10.1109/JSEN.2006.888602

    PY - 2007/4

    Y1 - 2007/4

    N2 - We designed a silicon-processing compatible, simple, and cheap device operating at a power down to sub- W. It has a pillar-shaped structure with a nanoscopic (10–100 nm in size) conductive link (the so-called antifuse) created between two electrodes separated by a SiO2 layer. The device exhibits a diode-like behavior due to the depletion effects in the mono-silicon pillar. The device is capable of maintaining a microscopic hot-surface area of several hundreds degrees centigrade. The size of the hot area and its temperature can be manipulated by the sign of the applied bias. Two different heat-generation mechanisms (i.e., dissipation at a resistor and a non-radiative recombination of carriers) are proposed and modelled. Such a device can be used as a heat source, as a light source, and as a sensitive detector of light and heat. In this paper, we describe thermo-electrical properties of the fabricated devices and demonstrate their feasibility to perform as gas-, adsorption-, desorption sensors, and as units for activating chemisorption/decomposition of gaseous precursors, i.e., micro-reactors.

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