A polymer condenser microphone on silicon with on-chip cmos amplifier

M. Pedersen, Wouter Olthuis, Piet Bergveld

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    Abstract

    In this paper the development of a capacitive microphone with integrated preamplifier is described. The condenser microphone is made by micromachining of polyimide on silicon, and is compatible with CMOS technology. Therefore, the structure can be realised by post processing on substrates containing integrated circuits, independently of the IC process. Microphones with a required DC bias voltage of 4 V have been realised on a CMOS substrate containing PMOS buffer preamplifiers. From the measurements on these structures, it is illustrated how an immediate improvement of 4.8 dB of the microphone sensitivity and noise level can be obtained by using the integrated preamplifier. The measured sensitivity of the integrated condenser microphone was 2.5 mV/Pa and the equivalent noise level (ENL) was 29.5 dB(A) SPL
    Original languageUndefined
    Title of host publicationTransducers '97, vol 1
    Place of PublicationChicago, USA
    PublisherIEEE
    Pages445-446
    ISBN (Print)0-7803-3829-4
    DOIs
    Publication statusPublished - 17 Jun 1997
    Event1997 International Conference on Solid-State Sensors and Actuators, TRANSDUCERS 1997 - Chicago, United States
    Duration: 16 Jun 199719 Jun 1997

    Publication series

    Name
    PublisherIEEE
    Volume1

    Conference

    Conference1997 International Conference on Solid-State Sensors and Actuators, TRANSDUCERS 1997
    Abbreviated titleTRANSDUCERS 97
    CountryUnited States
    CityChicago
    Period16/06/9719/06/97

    Keywords

    • IR-16878
    • METIS-113763

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