A polymer condenser microphone on silicon with on-chip cmos amplifier

M. Pedersen; Wouter Olthuis; Piet Bergveld

doi:10.1109/SENSOR.1997.613681

A polymer condenser microphone on silicon with on-chip cmos amplifier

M. Pedersen, Wouter Olthuis, Piet Bergveld

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

In this paper the development of a capacitive microphone with integrated preamplifier is described. The condenser microphone is made by micromachining of polyimide on silicon, and is compatible with CMOS technology. Therefore, the structure can be realised by post processing on substrates containing integrated circuits, independently of the IC process. Microphones with a required DC bias voltage of 4 V have been realised on a CMOS substrate containing PMOS buffer preamplifiers. From the measurements on these structures, it is illustrated how an immediate improvement of 4.8 dB of the microphone sensitivity and noise level can be obtained by using the integrated preamplifier. The measured sensitivity of the integrated condenser microphone was 2.5 mV/Pa and the equivalent noise level (ENL) was 29.5 dB(A) SPL

Original language	Undefined
Title of host publication	Transducers '97, vol 1
Place of Publication	Chicago, USA
Publisher	IEEE
Pages	445-446
ISBN (Print)	0-7803-3829-4
DOIs	https://doi.org/10.1109/SENSOR.1997.613681
Publication status	Published - 17 Jun 1997
Event	1997 International Conference on Solid-State Sensors and Actuators, TRANSDUCERS 1997 - Chicago, United States Duration: 16 Jun 1997 → 19 Jun 1997

Publication series

Name
Publisher	IEEE
Volume	1

Conference

Conference	1997 International Conference on Solid-State Sensors and Actuators, TRANSDUCERS 1997
Abbreviated title	TRANSDUCERS 97
Country/Territory	United States
City	Chicago
Period	16/06/97 → 19/06/97

Keywords

IR-16878
METIS-113763

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/SENSOR.1997.613681

00613681

Cite this

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title = "A polymer condenser microphone on silicon with on-chip cmos amplifier",

abstract = "In this paper the development of a capacitive microphone with integrated preamplifier is described. The condenser microphone is made by micromachining of polyimide on silicon, and is compatible with CMOS technology. Therefore, the structure can be realised by post processing on substrates containing integrated circuits, independently of the IC process. Microphones with a required DC bias voltage of 4 V have been realised on a CMOS substrate containing PMOS buffer preamplifiers. From the measurements on these structures, it is illustrated how an immediate improvement of 4.8 dB of the microphone sensitivity and noise level can be obtained by using the integrated preamplifier. The measured sensitivity of the integrated condenser microphone was 2.5 mV/Pa and the equivalent noise level (ENL) was 29.5 dB(A) SPL",

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AU - Pedersen, M.

AU - Olthuis, Wouter

AU - Bergveld, Piet

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N2 - In this paper the development of a capacitive microphone with integrated preamplifier is described. The condenser microphone is made by micromachining of polyimide on silicon, and is compatible with CMOS technology. Therefore, the structure can be realised by post processing on substrates containing integrated circuits, independently of the IC process. Microphones with a required DC bias voltage of 4 V have been realised on a CMOS substrate containing PMOS buffer preamplifiers. From the measurements on these structures, it is illustrated how an immediate improvement of 4.8 dB of the microphone sensitivity and noise level can be obtained by using the integrated preamplifier. The measured sensitivity of the integrated condenser microphone was 2.5 mV/Pa and the equivalent noise level (ENL) was 29.5 dB(A) SPL

AB - In this paper the development of a capacitive microphone with integrated preamplifier is described. The condenser microphone is made by micromachining of polyimide on silicon, and is compatible with CMOS technology. Therefore, the structure can be realised by post processing on substrates containing integrated circuits, independently of the IC process. Microphones with a required DC bias voltage of 4 V have been realised on a CMOS substrate containing PMOS buffer preamplifiers. From the measurements on these structures, it is illustrated how an immediate improvement of 4.8 dB of the microphone sensitivity and noise level can be obtained by using the integrated preamplifier. The measured sensitivity of the integrated condenser microphone was 2.5 mV/Pa and the equivalent noise level (ENL) was 29.5 dB(A) SPL

KW - IR-16878

KW - METIS-113763

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DO - 10.1109/SENSOR.1997.613681

M3 - Conference contribution

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EP - 446

BT - Transducers '97, vol 1

PB - IEEE

CY - Chicago, USA

T2 - 1997 International Conference on Solid-State Sensors and Actuators, TRANSDUCERS 1997

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