A Polysilicon Source and Drain MOS Transistor (PSD MOST)

J. Middelhoek, A. Kooy

    Research output: Contribution to journalArticleAcademicpeer-review

    7 Citations (Scopus)
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    Abstract

    An MOS transistor is described in which the source and drain areas are obtained by diffusion from doped polycrystalline silicon. Polysilicon tracks form the interconnect with the diffusion areas without the need for contact windows. As a result transistor and junction sizes are reduced by a factor 2 or 3 over a normal structure. Polycrystalline silicon tracks in this [figure omitted] new technique are of greater advantage as interconnect layers than in the silicon gate technique.

    Original languageEnglish
    Pages (from-to)523-525
    Number of pages3
    JournalIEEE transactions on electron devices
    Volume23
    Issue number5
    DOIs
    Publication statusPublished - 1976

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