A reliability model for interlayer dielectric cracking during fast thermal cycling

Van Hieu Nguyen, Cora Salm, B.H. Krabbenborg, B.H. Krabbenborg, J. Bisschop, A.J. Mouthaan, F.G. Kuper

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    6 Citations (Scopus)
    235 Downloads (Pure)


    Interlayer dielectric (ILD) cracking can result in short circuits of multilevel interconnects. This paper presents a reliability model for ILD cracking induced by fast thermal cycling (FTC) stress. FTC tests have been performed under different temperature ranges (∆T) and minimum temperatures (Tmin). The Weibull distributions of time to failure are relatively well behaved with a similar slope. The number of cycles to failure increases with increasing Tmin, even though ∆T increases. The Coffin-Manson law is used to model the failure rate only for test results having the same Tmin. The obtained exponent value is in the range of brittle material cracking mechanism, which is confirmed by failure analysis and modeling of the failure mechanism. An extended Coffin-Manson law is developed to model failure rates during FTC stress.
    Original languageUndefined
    Title of host publicationAdvanced Metallization Conference (AMC 2003)
    EditorsGary W. Ray, Tom Smy, Tomohiro Ohta, Manabu Tsujimura
    Place of PublicationWarrendale, PA
    PublisherMaterials Research Society
    Number of pages5
    ISBN (Print)1558997571
    Publication statusPublished - 21 Oct 2003
    EventAdvanced Metallization Conference, AMC 2003 - Montreal, Canada
    Duration: 21 Oct 200323 Oct 2003

    Publication series

    PublisherMaterials Research Society


    ConferenceAdvanced Metallization Conference, AMC 2003
    Abbreviated titleAMC 2003
    Other21-23 Oct 2003


    • IR-67736
    • METIS-220203
    • EWI-15555

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