A reliability model for interlayer dielectric cracking during fast thermal cycling

Hieu V. Nguyen; Cora Salm; Benno Krabbenborg; Jaap Bisschop; Ton J. Mouthaan; Fred G. Kuper

A reliability model for interlayer dielectric cracking during fast thermal cycling

Hieu V. Nguyen
, Cora Salm
, Benno Krabbenborg
, Jaap Bisschop
, Ton J. Mouthaan
, Fred G. Kuper

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

415 Downloads (Pure)

Abstract

Interlayer dielectric (ILD) cracking can result in short circuits of multilevel interconnects. This paper presents a reliability model for ILD cracking induced by fast thermal cycling (FTC) stress. FTC tests have been performed under different temperature ranges (∆T) and minimum temperatures (Tmin). The Weibull distributions of time to failure are relatively well behaved with a similar slope. The number of cycles to failure increases with increasing Tmin, even though ∆T increases. The Coffin-Manson law is used to model the failure rate only for test results having the same Tmin. The obtained exponent value is in the range of brittle material cracking mechanism, which is confirmed by failure analysis and modeling of the failure mechanism. An extended Coffin-Manson law is developed to model failure rates during FTC stress.

Original language	English
Title of host publication	Advanced Metallization Conference (AMC 2003)
Subtitle of host publication	Proceedings of the conference held October 21-23, 2003, in Montreal, Canada, and September 29-October 1, 2003, University of Tokyo, Tokyo, Japan
Editors	Gary W. Ray, Tom Smy, Tomohiro Ohta, Manabu Tsujimura
Place of Publication	Warrendale, PA
Publisher	Materials Research Society
Pages	295-299
Number of pages	5
ISBN (Print)	1558997571
Publication status	Published - 21 Oct 2003
Event	Advanced Metallization Conference, AMC 2003 - Montreal, Canada Duration: 21 Oct 2003 → 23 Oct 2003

Conference

Conference	Advanced Metallization Conference, AMC 2003
Abbreviated title	AMC 2003
Country/Territory	Canada
City	Montreal
Period	21/10/03 → 23/10/03
Other	21-23 Oct 2003

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Nguyen, H. V., Salm, C., Krabbenborg, B., Bisschop, J., Mouthaan, T. J., & Kuper, F. G. (2003). A reliability model for interlayer dielectric cracking during fast thermal cycling. In G. W. Ray, T. Smy, T. Ohta, & M. Tsujimura (Eds.), Advanced Metallization Conference (AMC 2003): Proceedings of the conference held October 21-23, 2003, in Montreal, Canada, and September 29-October 1, 2003, University of Tokyo, Tokyo, Japan (pp. 295-299). Materials Research Society.

Nguyen, Hieu V. ; Salm, Cora ; Krabbenborg, Benno et al. / A reliability model for interlayer dielectric cracking during fast thermal cycling. Advanced Metallization Conference (AMC 2003): Proceedings of the conference held October 21-23, 2003, in Montreal, Canada, and September 29-October 1, 2003, University of Tokyo, Tokyo, Japan. editor / Gary W. Ray ; Tom Smy ; Tomohiro Ohta ; Manabu Tsujimura. Warrendale, PA : Materials Research Society, 2003. pp. 295-299

@inproceedings{978a25227df04866af04b693b3172ea0,

title = "A reliability model for interlayer dielectric cracking during fast thermal cycling",

abstract = "Interlayer dielectric (ILD) cracking can result in short circuits of multilevel interconnects. This paper presents a reliability model for ILD cracking induced by fast thermal cycling (FTC) stress. FTC tests have been performed under different temperature ranges (∆T) and minimum temperatures (Tmin). The Weibull distributions of time to failure are relatively well behaved with a similar slope. The number of cycles to failure increases with increasing Tmin, even though ∆T increases. The Coffin-Manson law is used to model the failure rate only for test results having the same Tmin. The obtained exponent value is in the range of brittle material cracking mechanism, which is confirmed by failure analysis and modeling of the failure mechanism. An extended Coffin-Manson law is developed to model failure rates during FTC stress.",

author = "Nguyen, \{Hieu V.\} and Cora Salm and Benno Krabbenborg and Jaap Bisschop and Mouthaan, \{Ton J.\} and Kuper, \{Fred G.\}",

year = "2003",

month = oct,

day = "21",

language = "English",

isbn = "1558997571",

pages = "295--299",

editor = "Ray, \{Gary W.\} and Tom Smy and Tomohiro Ohta and Manabu Tsujimura",

booktitle = "Advanced Metallization Conference (AMC 2003)",

publisher = "Materials Research Society",

address = "United States",

note = "Advanced Metallization Conference, AMC 2003, AMC 2003 ; Conference date: 21-10-2003 Through 23-10-2003",

}

Nguyen, HV, Salm, C, Krabbenborg, B, Bisschop, J, Mouthaan, TJ & Kuper, FG 2003, A reliability model for interlayer dielectric cracking during fast thermal cycling. in GW Ray, T Smy, T Ohta & M Tsujimura (eds), Advanced Metallization Conference (AMC 2003): Proceedings of the conference held October 21-23, 2003, in Montreal, Canada, and September 29-October 1, 2003, University of Tokyo, Tokyo, Japan. Materials Research Society, Warrendale, PA, pp. 295-299, Advanced Metallization Conference, AMC 2003, Montreal, Quebec, Canada, 21/10/03.

A reliability model for interlayer dielectric cracking during fast thermal cycling. / Nguyen, Hieu V.; Salm, Cora; Krabbenborg, Benno et al.
Advanced Metallization Conference (AMC 2003): Proceedings of the conference held October 21-23, 2003, in Montreal, Canada, and September 29-October 1, 2003, University of Tokyo, Tokyo, Japan. ed. / Gary W. Ray; Tom Smy; Tomohiro Ohta; Manabu Tsujimura. Warrendale, PA: Materials Research Society, 2003. p. 295-299.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - A reliability model for interlayer dielectric cracking during fast thermal cycling

AU - Nguyen, Hieu V.

AU - Salm, Cora

AU - Krabbenborg, Benno

AU - Bisschop, Jaap

AU - Mouthaan, Ton J.

AU - Kuper, Fred G.

PY - 2003/10/21

Y1 - 2003/10/21

N2 - Interlayer dielectric (ILD) cracking can result in short circuits of multilevel interconnects. This paper presents a reliability model for ILD cracking induced by fast thermal cycling (FTC) stress. FTC tests have been performed under different temperature ranges (∆T) and minimum temperatures (Tmin). The Weibull distributions of time to failure are relatively well behaved with a similar slope. The number of cycles to failure increases with increasing Tmin, even though ∆T increases. The Coffin-Manson law is used to model the failure rate only for test results having the same Tmin. The obtained exponent value is in the range of brittle material cracking mechanism, which is confirmed by failure analysis and modeling of the failure mechanism. An extended Coffin-Manson law is developed to model failure rates during FTC stress.

AB - Interlayer dielectric (ILD) cracking can result in short circuits of multilevel interconnects. This paper presents a reliability model for ILD cracking induced by fast thermal cycling (FTC) stress. FTC tests have been performed under different temperature ranges (∆T) and minimum temperatures (Tmin). The Weibull distributions of time to failure are relatively well behaved with a similar slope. The number of cycles to failure increases with increasing Tmin, even though ∆T increases. The Coffin-Manson law is used to model the failure rate only for test results having the same Tmin. The obtained exponent value is in the range of brittle material cracking mechanism, which is confirmed by failure analysis and modeling of the failure mechanism. An extended Coffin-Manson law is developed to model failure rates during FTC stress.

M3 - Conference contribution

SN - 1558997571

SP - 295

EP - 299

BT - Advanced Metallization Conference (AMC 2003)

A2 - Ray, Gary W.

A2 - Smy, Tom

A2 - Ohta, Tomohiro

A2 - Tsujimura, Manabu

PB - Materials Research Society

CY - Warrendale, PA

T2 - Advanced Metallization Conference, AMC 2003

Y2 - 21 October 2003 through 23 October 2003

ER -

Nguyen HV, Salm C, Krabbenborg B, Bisschop J, Mouthaan TJ, Kuper FG. A reliability model for interlayer dielectric cracking during fast thermal cycling. In Ray GW, Smy T, Ohta T, Tsujimura M, editors, Advanced Metallization Conference (AMC 2003): Proceedings of the conference held October 21-23, 2003, in Montreal, Canada, and September 29-October 1, 2003, University of Tokyo, Tokyo, Japan. Warrendale, PA: Materials Research Society. 2003. p. 295-299

A reliability model for interlayer dielectric cracking during fast thermal cycling

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