A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures

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Abstract

A novel fabrication technique is developed to deliver self-aligned gate structures on vertically aligned periodic silicon nanocones with gate aperture radii of 65±3 nm and a surface density of 1.6 billion structures cm-2 across the 100 mm diameter substrate scale. The silicon nanocones were obtained by a combination of ion beam etching and thermal oxidation whereas the gate structures were obtained by a combination of ion beam etching planarization and selective wet chemical etching.

Original languageEnglish
Title of host publication35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022
PublisherIEEE Computer Society
Pages561-564
Number of pages4
ISBN (Electronic)9781665409117
DOIs
Publication statusPublished - 11 Feb 2022
Event35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022 - Tokyo, Japan
Duration: 9 Jan 202213 Jan 2022

Publication series

NameIEEE Symposium on Mass Storage Systems and Technologies
Volume2022-January
ISSN (Print)2160-1968

Conference

Conference35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022
Country/TerritoryJapan
CityTokyo
Period9/01/2213/01/22

Keywords

  • cold field emitters
  • low energy ion beam etching
  • Planarization
  • self-aligned fabrication
  • 22/4 OA procedure

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