A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures

Dirk Jonker; Erwin J.W. Berenschot; Roald M. Tiggelaar; Niels R. Tas; Arie Van Houselt; Han J.G.E. Gardeniers

doi:10.1109/MEMS51670.2022.9699565

A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures

Dirk Jonker, Erwin J.W. Berenschot, Roald M. Tiggelaar, Niels R. Tas, Arie Van Houselt, Han J.G.E. Gardeniers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

9 Downloads (Pure)

Abstract

A novel fabrication technique is developed to deliver self-aligned gate structures on vertically aligned periodic silicon nanocones with gate aperture radii of 65±3 nm and a surface density of 1.6 billion structures cm-2 across the 100 mm diameter substrate scale. The silicon nanocones were obtained by a combination of ion beam etching and thermal oxidation whereas the gate structures were obtained by a combination of ion beam etching planarization and selective wet chemical etching.

Original language	English
Title of host publication	35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022
Publisher	IEEE
Pages	561-564
Number of pages	4
ISBN (Electronic)	9781665409117
DOIs	https://doi.org/10.1109/MEMS51670.2022.9699565
Publication status	Published - 11 Feb 2022
Event	35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022 - Tokyo, Japan Duration: 9 Jan 2022 → 13 Jan 2022

Publication series

Name	IEEE Symposium on Mass Storage Systems and Technologies
Volume	2022-January
ISSN (Print)	2160-1968

Conference

Conference	35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022
Country/Territory	Japan
City	Tokyo
Period	9/01/22 → 13/01/22

Keywords

cold field emitters
low energy ion beam etching
Planarization
self-aligned fabrication
22/4 OA procedure

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10.1109/MEMS51670.2022.9699565

Jonker-2022-A-self-aligned-wafer-scale-gate-allFinal published version, 1.58 MBLicence: Taverne

Cite this

Jonker, D., Berenschot, E. J. W., Tiggelaar, R. M., Tas, N. R., Van Houselt, A., & Gardeniers, H. J. G. E. (2022). A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures. In 35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022 (pp. 561-564). (IEEE Symposium on Mass Storage Systems and Technologies; Vol. 2022-January). IEEE. https://doi.org/10.1109/MEMS51670.2022.9699565

@inproceedings{12ff3dac86ae4e14919fcb8d573bfc74,

title = "A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures",

abstract = "A novel fabrication technique is developed to deliver self-aligned gate structures on vertically aligned periodic silicon nanocones with gate aperture radii of 65±3 nm and a surface density of 1.6 billion structures cm-2 across the 100 mm diameter substrate scale. The silicon nanocones were obtained by a combination of ion beam etching and thermal oxidation whereas the gate structures were obtained by a combination of ion beam etching planarization and selective wet chemical etching.",

keywords = "cold field emitters, low energy ion beam etching, Planarization, self-aligned fabrication, 22/4 OA procedure",

author = "Dirk Jonker and Berenschot, {Erwin J.W.} and Tiggelaar, {Roald M.} and Tas, {Niels R.} and {Van Houselt}, Arie and Gardeniers, {Han J.G.E.}",

note = "Funding Information: The authors also would like to thank the Netherlands Center for Multiscale Catalytic Energy Conversion (MCEC), an NWO Gravitation program, funded by the Ministry of Education, Culture and Science of the government of the Netherlands. Publisher Copyright: {\textcopyright} 2022 IEEE.; 35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022 ; Conference date: 09-01-2022 Through 13-01-2022",

year = "2022",

month = feb,

day = "11",

doi = "10.1109/MEMS51670.2022.9699565",

language = "English",

series = "IEEE Symposium on Mass Storage Systems and Technologies",

publisher = "IEEE",

pages = "561--564",

booktitle = "35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022",

}

Jonker, D , Berenschot, EJW , Tiggelaar, RM , Tas, NR , Van Houselt, A & Gardeniers, HJGE 2022, A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures. in 35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022. IEEE Symposium on Mass Storage Systems and Technologies, vol. 2022-January, IEEE, pp. 561-564, 35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022, Tokyo, Japan, 9/01/22. https://doi.org/10.1109/MEMS51670.2022.9699565

A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures. / Jonker, Dirk ; Berenschot, Erwin J.W.; Tiggelaar, Roald M. et al.

35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022. IEEE, 2022. p. 561-564 (IEEE Symposium on Mass Storage Systems and Technologies; Vol. 2022-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures

AU - Jonker, Dirk

AU - Berenschot, Erwin J.W.

AU - Tiggelaar, Roald M.

AU - Tas, Niels R.

AU - Van Houselt, Arie

AU - Gardeniers, Han J.G.E.

N1 - Funding Information: The authors also would like to thank the Netherlands Center for Multiscale Catalytic Energy Conversion (MCEC), an NWO Gravitation program, funded by the Ministry of Education, Culture and Science of the government of the Netherlands. Publisher Copyright: © 2022 IEEE.

PY - 2022/2/11

Y1 - 2022/2/11

N2 - A novel fabrication technique is developed to deliver self-aligned gate structures on vertically aligned periodic silicon nanocones with gate aperture radii of 65±3 nm and a surface density of 1.6 billion structures cm-2 across the 100 mm diameter substrate scale. The silicon nanocones were obtained by a combination of ion beam etching and thermal oxidation whereas the gate structures were obtained by a combination of ion beam etching planarization and selective wet chemical etching.

AB - A novel fabrication technique is developed to deliver self-aligned gate structures on vertically aligned periodic silicon nanocones with gate aperture radii of 65±3 nm and a surface density of 1.6 billion structures cm-2 across the 100 mm diameter substrate scale. The silicon nanocones were obtained by a combination of ion beam etching and thermal oxidation whereas the gate structures were obtained by a combination of ion beam etching planarization and selective wet chemical etching.

KW - cold field emitters

KW - low energy ion beam etching

KW - Planarization

KW - self-aligned fabrication

KW - 22/4 OA procedure

UR - http://www.scopus.com/inward/record.url?scp=85126394154&partnerID=8YFLogxK

U2 - 10.1109/MEMS51670.2022.9699565

DO - 10.1109/MEMS51670.2022.9699565

M3 - Conference contribution

AN - SCOPUS:85126394154

T3 - IEEE Symposium on Mass Storage Systems and Technologies

SP - 561

EP - 564

BT - 35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022

PB - IEEE

T2 - 35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022

Y2 - 9 January 2022 through 13 January 2022

ER -

Jonker D , Berenschot EJW , Tiggelaar RM , Tas NR , Van Houselt A , Gardeniers HJGE. A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures. In 35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022. IEEE. 2022. p. 561-564. (IEEE Symposium on Mass Storage Systems and Technologies). doi: 10.1109/MEMS51670.2022.9699565

A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures

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