@inproceedings{12ff3dac86ae4e14919fcb8d573bfc74,
title = "A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures",
abstract = "A novel fabrication technique is developed to deliver self-aligned gate structures on vertically aligned periodic silicon nanocones with gate aperture radii of 65±3 nm and a surface density of 1.6 billion structures cm-2 across the 100 mm diameter substrate scale. The silicon nanocones were obtained by a combination of ion beam etching and thermal oxidation whereas the gate structures were obtained by a combination of ion beam etching planarization and selective wet chemical etching.",
keywords = "cold field emitters, low energy ion beam etching, Planarization, self-aligned fabrication, 22/4 OA procedure",
author = "Dirk Jonker and Berenschot, {Erwin J.W.} and Tiggelaar, {Roald M.} and Tas, {Niels R.} and {Van Houselt}, Arie and Gardeniers, {Han J.G.E.}",
note = "Funding Information: The authors also would like to thank the Netherlands Center for Multiscale Catalytic Energy Conversion (MCEC), an NWO Gravitation program, funded by the Ministry of Education, Culture and Science of the government of the Netherlands. Publisher Copyright: {\textcopyright} 2022 IEEE.; 35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022 ; Conference date: 09-01-2022 Through 13-01-2022",
year = "2022",
month = feb,
day = "11",
doi = "10.1109/MEMS51670.2022.9699565",
language = "English",
series = "IEEE Symposium on Mass Storage Systems and Technologies",
publisher = "IEEE Computer Society",
pages = "561--564",
booktitle = "35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022",
address = "United States",
}