A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures

Dirk Jonker; Erwin J.W. Berenschot; Roald M. Tiggelaar; Niels R. Tas; Arie Van Houselt; Han J.G.E. Gardeniers

doi:10.1109/MEMS51670.2022.9699565

A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

198 Downloads (Pure)

Abstract

A novel fabrication technique is developed to deliver self-aligned gate structures on vertically aligned periodic silicon nanocones with gate aperture radii of 65±3 nm and a surface density of 1.6 billion structures cm-2 across the 100 mm diameter substrate scale. The silicon nanocones were obtained by a combination of ion beam etching and thermal oxidation whereas the gate structures were obtained by a combination of ion beam etching planarization and selective wet chemical etching.

Original language	English
Title of host publication	35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022
Publisher	IEEE
Pages	561-564
Number of pages	4
ISBN (Electronic)	9781665409117
DOIs	https://doi.org/10.1109/MEMS51670.2022.9699565
Publication status	Published - 11 Feb 2022
Event	35th International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022 - Tokyo, Japan Duration: 9 Jan 2022 → 13 Jan 2022 Conference number: 35 https://ieeemems2022.org/

Publication series

Name	IEEE Symposium on Mass Storage Systems and Technologies
Volume	2022-January
ISSN (Print)	2160-1968

Conference

Conference	35th International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022
Abbreviated title	MEMS 2022
Country/Territory	Japan
City	Tokyo
Period	9/01/22 → 13/01/22
Internet address	https://ieeemems2022.org/

Keywords

cold field emitters
low energy ion beam etching
Planarization
self-aligned fabrication
22/4 OA procedure

Access to Document

10.1109/MEMS51670.2022.9699565

Jonker-2022-A-self-aligned-wafer-scale-gate-allFinal published version, 1.58 MBLicence: Taverne

Cite this

Jonker, D., Berenschot, E. J. W., Tiggelaar, R. M., Tas, N. R., Van Houselt, A., & Gardeniers, H. J. G. E. (2022). A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures. In 35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022 (pp. 561-564). (IEEE Symposium on Mass Storage Systems and Technologies; Vol. 2022-January). IEEE. https://doi.org/10.1109/MEMS51670.2022.9699565

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title = "A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures",

abstract = "A novel fabrication technique is developed to deliver self-aligned gate structures on vertically aligned periodic silicon nanocones with gate aperture radii of 65±3 nm and a surface density of 1.6 billion structures cm-2 across the 100 mm diameter substrate scale. The silicon nanocones were obtained by a combination of ion beam etching and thermal oxidation whereas the gate structures were obtained by a combination of ion beam etching planarization and selective wet chemical etching.",

keywords = "cold field emitters, low energy ion beam etching, Planarization, self-aligned fabrication, 22/4 OA procedure",

author = "Dirk Jonker and Berenschot, \{Erwin J.W.\} and Tiggelaar, \{Roald M.\} and Tas, \{Niels R.\} and \{Van Houselt\}, Arie and Gardeniers, \{Han J.G.E.\}",

note = "Funding Information: The authors also would like to thank the Netherlands Center for Multiscale Catalytic Energy Conversion (MCEC), an NWO Gravitation program, funded by the Ministry of Education, Culture and Science of the government of the Netherlands. Publisher Copyright: {\textcopyright} 2022 IEEE.; 35th International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022, MEMS 2022 ; Conference date: 09-01-2022 Through 13-01-2022",

year = "2022",

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day = "11",

doi = "10.1109/MEMS51670.2022.9699565",

language = "English",

series = "IEEE Symposium on Mass Storage Systems and Technologies",

publisher = "IEEE",

pages = "561--564",

booktitle = "35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022",

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Jonker, D, Berenschot, EJW , Tiggelaar, RM , Tas, NR , Van Houselt, A & Gardeniers, HJGE 2022, A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures. in 35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022. IEEE Symposium on Mass Storage Systems and Technologies, vol. 2022-January, IEEE, pp. 561-564, 35th International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022, Tokyo, Japan, 9/01/22. https://doi.org/10.1109/MEMS51670.2022.9699565

A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures. / Jonker, Dirk; Berenschot, Erwin J.W.; Tiggelaar, Roald M. et al.
35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022. IEEE, 2022. p. 561-564 (IEEE Symposium on Mass Storage Systems and Technologies; Vol. 2022-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures

AU - Jonker, Dirk

AU - Berenschot, Erwin J.W.

AU - Tiggelaar, Roald M.

AU - Tas, Niels R.

AU - Van Houselt, Arie

AU - Gardeniers, Han J.G.E.

N1 - Conference code: 35

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N2 - A novel fabrication technique is developed to deliver self-aligned gate structures on vertically aligned periodic silicon nanocones with gate aperture radii of 65±3 nm and a surface density of 1.6 billion structures cm-2 across the 100 mm diameter substrate scale. The silicon nanocones were obtained by a combination of ion beam etching and thermal oxidation whereas the gate structures were obtained by a combination of ion beam etching planarization and selective wet chemical etching.

AB - A novel fabrication technique is developed to deliver self-aligned gate structures on vertically aligned periodic silicon nanocones with gate aperture radii of 65±3 nm and a surface density of 1.6 billion structures cm-2 across the 100 mm diameter substrate scale. The silicon nanocones were obtained by a combination of ion beam etching and thermal oxidation whereas the gate structures were obtained by a combination of ion beam etching planarization and selective wet chemical etching.

KW - cold field emitters

KW - low energy ion beam etching

KW - Planarization

KW - self-aligned fabrication

KW - 22/4 OA procedure

UR - https://www.scopus.com/pages/publications/85126394154

U2 - 10.1109/MEMS51670.2022.9699565

DO - 10.1109/MEMS51670.2022.9699565

M3 - Conference contribution

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BT - 35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022

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T2 - 35th International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022

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Jonker D, Berenschot EJW , Tiggelaar RM , Tas NR , Van Houselt A , Gardeniers HJGE. A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures. In 35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022. IEEE. 2022. p. 561-564. (IEEE Symposium on Mass Storage Systems and Technologies). doi: 10.1109/MEMS51670.2022.9699565

A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures

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