A short post-processing method for high aspect ratio trenches after Bosch etching

Henk-Willem  Veltkamp; Yiyuan  Zhao; Meint J. de Boer; Remco J. Wiegerink; Joost Conrad Lötters

A short post-processing method for high aspect ratio trenches after Bosch etching

Henk-Willem Veltkamp, Yiyuan Zhao, Meint J. de Boer, Remco J. Wiegerink, Joost Conrad Lötters

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Abstract

An in-situ O2 plasma is often used for cleaning high aspect ratio Si structures (AR = 35) which are Bosch-etched. During the cleaning process a SiOx layer is formed, which could be a problem for further processing. A vapor HF step is introduced to remove the SiOx layer uniformly in structures with an aspect ratio of 35 and to obtain a well-defined Si surface again.

Original language	English
Number of pages	1
Publication status	Published - 23 Sept 2019
Event	45th International Conference on Micro- and Nano-Engineering, MNE 2019 - Rodos Palace Hotel, Rhodes, Greece Duration: 23 Sept 2019 → 26 Sept 2019 Conference number: 45 http://mne2019.org/

Conference

Conference	45th International Conference on Micro- and Nano-Engineering, MNE 2019
Abbreviated title	MNE 2019
Country/Territory	Greece
City	Rhodes
Period	23/09/19 → 26/09/19
Internet address	http://mne2019.org/

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title = "A short post-processing method for high aspect ratio trenches after Bosch etching",

abstract = "An in-situ O2 plasma is often used for cleaning high aspect ratio Si structures (AR = 35) which are Bosch-etched. During the cleaning process a SiOx layer is formed, which could be a problem for further processing. A vapor HF step is introduced to remove the SiOx layer uniformly in structures with an aspect ratio of 35 and to obtain a well-defined Si surface again.",

author = "Henk-Willem Veltkamp and Yiyuan Zhao and {de Boer}, {Meint J.} and Wiegerink, {Remco J.} and L{\"o}tters, {Joost Conrad}",

year = "2019",

month = sep,

day = "23",

language = "English",

note = "45th International Conference on Micro- and Nano-Engineering, MNE 2019, MNE 2019 ; Conference date: 23-09-2019 Through 26-09-2019",

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T1 - A short post-processing method for high aspect ratio trenches after Bosch etching

AU - Veltkamp, Henk-Willem

AU - Zhao, Yiyuan

AU - de Boer, Meint J.

AU - Wiegerink, Remco J.

AU - Lötters, Joost Conrad

N1 - Conference code: 45

PY - 2019/9/23

Y1 - 2019/9/23

N2 - An in-situ O2 plasma is often used for cleaning high aspect ratio Si structures (AR = 35) which are Bosch-etched. During the cleaning process a SiOx layer is formed, which could be a problem for further processing. A vapor HF step is introduced to remove the SiOx layer uniformly in structures with an aspect ratio of 35 and to obtain a well-defined Si surface again.

AB - An in-situ O2 plasma is often used for cleaning high aspect ratio Si structures (AR = 35) which are Bosch-etched. During the cleaning process a SiOx layer is formed, which could be a problem for further processing. A vapor HF step is introduced to remove the SiOx layer uniformly in structures with an aspect ratio of 35 and to obtain a well-defined Si surface again.

M3 - Abstract

T2 - 45th International Conference on Micro- and Nano-Engineering, MNE 2019

Y2 - 23 September 2019 through 26 September 2019

ER -

A short post-processing method for high aspect ratio trenches after Bosch etching

Abstract

Conference

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