A short post-processing method for high aspect ratio trenches after Bosch etching

    Research output: Contribution to conferenceAbstractAcademic

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    Abstract

    An in-situ O2 plasma is often used for cleaning high aspect ratio Si structures (AR = 35) which are Bosch-etched. During the cleaning process a SiOx layer is formed, which could be a problem for further processing. A vapor HF step is introduced to remove the SiOx layer uniformly in structures with an aspect ratio of 35 and to obtain a well-defined Si surface again.
    Original languageEnglish
    Number of pages1
    Publication statusPublished - 23 Sep 2019
    Event45th International Conference on Micro and Nano Engineering, MNE 2019 - Rodos Palace Hotel, Rhodes, Greece
    Duration: 23 Sep 201926 Sep 2019
    Conference number: 45
    http://mne2019.org/

    Conference

    Conference45th International Conference on Micro and Nano Engineering, MNE 2019
    Abbreviated titleMNE 2019
    CountryGreece
    CityRhodes
    Period23/09/1926/09/19
    Internet address

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    Aspect ratio
    Etching
    Cleaning
    Processing
    Vapors
    Plasmas

    Cite this

    Veltkamp, H-W., Zhao, Y., de Boer, M. J., Wiegerink, R. J., & Lötters, J. C. (2019). A short post-processing method for high aspect ratio trenches after Bosch etching. Abstract from 45th International Conference on Micro and Nano Engineering, MNE 2019, Rhodes, Greece.
    Veltkamp, Henk-Willem ; Zhao, Yiyuan ; de Boer, Meint J. ; Wiegerink, Remco J. ; Lötters, Joost Conrad. / A short post-processing method for high aspect ratio trenches after Bosch etching. Abstract from 45th International Conference on Micro and Nano Engineering, MNE 2019, Rhodes, Greece.1 p.
    @conference{5566d7cf065a4798bf5352dc61d9f7a2,
    title = "A short post-processing method for high aspect ratio trenches after Bosch etching",
    abstract = "An in-situ O2 plasma is often used for cleaning high aspect ratio Si structures (AR = 35) which are Bosch-etched. During the cleaning process a SiOx layer is formed, which could be a problem for further processing. A vapor HF step is introduced to remove the SiOx layer uniformly in structures with an aspect ratio of 35 and to obtain a well-defined Si surface again.",
    author = "Henk-Willem Veltkamp and Yiyuan Zhao and {de Boer}, {Meint J.} and Wiegerink, {Remco J.} and L{\"o}tters, {Joost Conrad}",
    year = "2019",
    month = "9",
    day = "23",
    language = "English",
    note = "45th International Conference on Micro and Nano Engineering, MNE 2019, MNE 2019 ; Conference date: 23-09-2019 Through 26-09-2019",
    url = "http://mne2019.org/",

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    Veltkamp, H-W, Zhao, Y, de Boer, MJ, Wiegerink, RJ & Lötters, JC 2019, 'A short post-processing method for high aspect ratio trenches after Bosch etching' 45th International Conference on Micro and Nano Engineering, MNE 2019, Rhodes, Greece, 23/09/19 - 26/09/19, .

    A short post-processing method for high aspect ratio trenches after Bosch etching. / Veltkamp, Henk-Willem ; Zhao, Yiyuan ; de Boer, Meint J.; Wiegerink, Remco J.; Lötters, Joost Conrad.

    2019. Abstract from 45th International Conference on Micro and Nano Engineering, MNE 2019, Rhodes, Greece.

    Research output: Contribution to conferenceAbstractAcademic

    TY - CONF

    T1 - A short post-processing method for high aspect ratio trenches after Bosch etching

    AU - Veltkamp, Henk-Willem

    AU - Zhao, Yiyuan

    AU - de Boer, Meint J.

    AU - Wiegerink, Remco J.

    AU - Lötters, Joost Conrad

    PY - 2019/9/23

    Y1 - 2019/9/23

    N2 - An in-situ O2 plasma is often used for cleaning high aspect ratio Si structures (AR = 35) which are Bosch-etched. During the cleaning process a SiOx layer is formed, which could be a problem for further processing. A vapor HF step is introduced to remove the SiOx layer uniformly in structures with an aspect ratio of 35 and to obtain a well-defined Si surface again.

    AB - An in-situ O2 plasma is often used for cleaning high aspect ratio Si structures (AR = 35) which are Bosch-etched. During the cleaning process a SiOx layer is formed, which could be a problem for further processing. A vapor HF step is introduced to remove the SiOx layer uniformly in structures with an aspect ratio of 35 and to obtain a well-defined Si surface again.

    M3 - Abstract

    ER -

    Veltkamp H-W, Zhao Y, de Boer MJ, Wiegerink RJ, Lötters JC. A short post-processing method for high aspect ratio trenches after Bosch etching. 2019. Abstract from 45th International Conference on Micro and Nano Engineering, MNE 2019, Rhodes, Greece.