A short post-processing method for high aspect ratio trenches after Bosch etching

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    Abstract

    An in-situ O2 plasma is often used for cleaning high aspect ratio Si structures (AR = 35) which are Bosch-etched. During the cleaning process a SiOx layer is formed, which could be a problem for further processing. A vapor HF step is introduced to remove the SiOx layer uniformly in structures with an aspect ratio of 35 and to obtain a well-defined Si surface again.
    Original languageEnglish
    Number of pages1
    Publication statusPublished - 23 Sep 2019
    Event45th International Conference on Micro- and Nano-Engineering, MNE 2019 - Rodos Palace Hotel, Rhodes, Greece
    Duration: 23 Sep 201926 Sep 2019
    Conference number: 45
    http://mne2019.org/

    Conference

    Conference45th International Conference on Micro- and Nano-Engineering, MNE 2019
    Abbreviated titleMNE 2019
    CountryGreece
    CityRhodes
    Period23/09/1926/09/19
    Internet address

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    Veltkamp, H-W., Zhao, Y., de Boer, M. J., Wiegerink, R. J., & Lötters, J. C. (2019). A short post-processing method for high aspect ratio trenches after Bosch etching. Abstract from 45th International Conference on Micro- and Nano-Engineering, MNE 2019, Rhodes, Greece.