A short post-processing method for high aspect ratio trenches after Bosch etching

Research output: Contribution to conferenceAbstractAcademic

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Abstract

An in-situ O2 plasma is often used for cleaning high aspect ratio Si structures (AR = 35) which are Bosch-etched. During the cleaning process a SiOx layer is formed, which could be a problem for further processing. A vapor HF step is introduced to remove the SiOx layer uniformly in structures with an aspect ratio of 35 and to obtain a well-defined Si surface again.
Original languageEnglish
Number of pages1
Publication statusPublished - 23 Sep 2019
Event45th International Conference on Micro and Nano Engineering, MNE 2019 - Rodos Palace Hotel, Rhodes, Greece
Duration: 23 Sep 201926 Sep 2019
Conference number: 45
http://mne2019.org/

Conference

Conference45th International Conference on Micro and Nano Engineering, MNE 2019
Abbreviated titleMNE 2019
CountryGreece
CityRhodes
Period23/09/1926/09/19
Internet address

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Aspect ratio
Etching
Cleaning
Processing
Vapors
Plasmas

Cite this

Veltkamp, H-W., Zhao, Y., de Boer, M. J., Wiegerink, R. J., & Lötters, J. C. (2019). A short post-processing method for high aspect ratio trenches after Bosch etching. Abstract from 45th International Conference on Micro and Nano Engineering, MNE 2019, Rhodes, Greece.
Veltkamp, Henk-Willem ; Zhao, Yiyuan ; de Boer, Meint J. ; Wiegerink, Remco J. ; Lötters, Joost Conrad. / A short post-processing method for high aspect ratio trenches after Bosch etching. Abstract from 45th International Conference on Micro and Nano Engineering, MNE 2019, Rhodes, Greece.1 p.
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title = "A short post-processing method for high aspect ratio trenches after Bosch etching",
abstract = "An in-situ O2 plasma is often used for cleaning high aspect ratio Si structures (AR = 35) which are Bosch-etched. During the cleaning process a SiOx layer is formed, which could be a problem for further processing. A vapor HF step is introduced to remove the SiOx layer uniformly in structures with an aspect ratio of 35 and to obtain a well-defined Si surface again.",
author = "Henk-Willem Veltkamp and Yiyuan Zhao and {de Boer}, {Meint J.} and Wiegerink, {Remco J.} and L{\"o}tters, {Joost Conrad}",
year = "2019",
month = "9",
day = "23",
language = "English",
note = "45th International Conference on Micro and Nano Engineering, MNE 2019, MNE 2019 ; Conference date: 23-09-2019 Through 26-09-2019",
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Veltkamp, H-W, Zhao, Y, de Boer, MJ, Wiegerink, RJ & Lötters, JC 2019, 'A short post-processing method for high aspect ratio trenches after Bosch etching' 45th International Conference on Micro and Nano Engineering, MNE 2019, Rhodes, Greece, 23/09/19 - 26/09/19, .

A short post-processing method for high aspect ratio trenches after Bosch etching. / Veltkamp, Henk-Willem ; Zhao, Yiyuan ; de Boer, Meint J.; Wiegerink, Remco J.; Lötters, Joost Conrad.

2019. Abstract from 45th International Conference on Micro and Nano Engineering, MNE 2019, Rhodes, Greece.

Research output: Contribution to conferenceAbstractAcademic

TY - CONF

T1 - A short post-processing method for high aspect ratio trenches after Bosch etching

AU - Veltkamp, Henk-Willem

AU - Zhao, Yiyuan

AU - de Boer, Meint J.

AU - Wiegerink, Remco J.

AU - Lötters, Joost Conrad

PY - 2019/9/23

Y1 - 2019/9/23

N2 - An in-situ O2 plasma is often used for cleaning high aspect ratio Si structures (AR = 35) which are Bosch-etched. During the cleaning process a SiOx layer is formed, which could be a problem for further processing. A vapor HF step is introduced to remove the SiOx layer uniformly in structures with an aspect ratio of 35 and to obtain a well-defined Si surface again.

AB - An in-situ O2 plasma is often used for cleaning high aspect ratio Si structures (AR = 35) which are Bosch-etched. During the cleaning process a SiOx layer is formed, which could be a problem for further processing. A vapor HF step is introduced to remove the SiOx layer uniformly in structures with an aspect ratio of 35 and to obtain a well-defined Si surface again.

M3 - Abstract

ER -

Veltkamp H-W, Zhao Y, de Boer MJ, Wiegerink RJ, Lötters JC. A short post-processing method for high aspect ratio trenches after Bosch etching. 2019. Abstract from 45th International Conference on Micro and Nano Engineering, MNE 2019, Rhodes, Greece.