An in-situ O2 plasma is often used for cleaning high aspect ratio Si structures (AR = 35) which are Bosch-etched. During the cleaning process a SiOx layer is formed, which could be a problem for further processing. A vapor HF step is introduced to remove the SiOx layer uniformly in structures with an aspect ratio of 35 and to obtain a well-defined Si surface again.
|Number of pages||1|
|Publication status||Published - 23 Sep 2019|
|Event||45th International Conference on Micro- and Nano-Engineering, MNE 2019 - Rodos Palace Hotel, Rhodes, Greece|
Duration: 23 Sep 2019 → 26 Sep 2019
Conference number: 45
|Conference||45th International Conference on Micro- and Nano-Engineering, MNE 2019|
|Abbreviated title||MNE 2019|
|Period||23/09/19 → 26/09/19|
Veltkamp, H-W., Zhao, Y., de Boer, M. J., Wiegerink, R. J., & Lötters, J. C. (2019). A short post-processing method for high aspect ratio trenches after Bosch etching. Abstract from 45th International Conference on Micro- and Nano-Engineering, MNE 2019, Rhodes, Greece.