A silicon-based electrical source for surface plasmon polaritons

Robert J. Walters; Rob V.A. van Loon; I. Brunets; Jurriaan Schmitz; Albert Polman

doi:10.1109/GROUP4.2009.5338358

A silicon-based electrical source for surface plasmon polaritons

Robert J. Walters, Rob V.A. van Loon, I. Brunets, Jurriaan Schmitz, Albert Polman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

245 Downloads (Pure)

Abstract

This work demonstrates the fabrication of a silicon-based electrical source for surface plasmon polaritons (SPPs) at low temperatures using silicon nanocrystal doped alumina within a metal-insulator-metal (MIM) waveguide geometry. The fabrication method uses established microtechnology processes that are compatible with backend CMOS technology. The fabricated device suggests a route forward towards high density, active plasmonic circuits that are integrated with silicon microelectronics.

Original language	Undefined
Title of host publication	Proceedings of the 6th International Conference on GroupIV Photonics GFP'09
Place of Publication	Piscataway
Publisher	IEEE
Pages	74-76
Number of pages	3
ISBN (Print)	978-1-4244-4402-1
DOIs	https://doi.org/10.1109/GROUP4.2009.5338358
Publication status	Published - 9 Sep 2009
Event	6th International Conference on GroupIV Photonics GFP'09 - San Francisco, USA Duration: 9 Sep 2009 → 11 Sep 2009

Publication series

Name
Publisher	IEEE Computer Society Press

Conference

Conference	6th International Conference on GroupIV Photonics GFP'09
Period	9/09/09 → 11/09/09
Other	9-11 Sept 2009

Keywords

METIS-265806
SC-ICF: Integrated Circuit Fabrication
EWI-17465
IR-70009

Access to Document

10.1109/GROUP4.2009.5338358

Cite this

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title = "A silicon-based electrical source for surface plasmon polaritons",

abstract = "This work demonstrates the fabrication of a silicon-based electrical source for surface plasmon polaritons (SPPs) at low temperatures using silicon nanocrystal doped alumina within a metal-insulator-metal (MIM) waveguide geometry. The fabrication method uses established microtechnology processes that are compatible with backend CMOS technology. The fabricated device suggests a route forward towards high density, active plasmonic circuits that are integrated with silicon microelectronics.",

keywords = "METIS-265806, SC-ICF: Integrated Circuit Fabrication, EWI-17465, IR-70009",

author = "Walters, {Robert J.} and {van Loon}, {Rob V.A.} and I. Brunets and Jurriaan Schmitz and Albert Polman",

note = "10.1109/GROUP4.2009.5338358 ; null ; Conference date: 09-09-2009 Through 11-09-2009",

year = "2009",

month = sep,

day = "9",

doi = "10.1109/GROUP4.2009.5338358",

language = "Undefined",

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Walters, RJ, van Loon, RVA, Brunets, I, Schmitz, J & Polman, A 2009, A silicon-based electrical source for surface plasmon polaritons. in Proceedings of the 6th International Conference on GroupIV Photonics GFP'09., 10.1109/GROUP4.2009.5338358, IEEE, Piscataway, pp. 74-76, 6th International Conference on GroupIV Photonics GFP'09, 9/09/09. https://doi.org/10.1109/GROUP4.2009.5338358

A silicon-based electrical source for surface plasmon polaritons. / Walters, Robert J.; van Loon, Rob V.A.; Brunets, I. et al.

Proceedings of the 6th International Conference on GroupIV Photonics GFP'09. Piscataway : IEEE, 2009. p. 74-76 10.1109/GROUP4.2009.5338358.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - A silicon-based electrical source for surface plasmon polaritons

AU - Walters, Robert J.

AU - van Loon, Rob V.A.

AU - Brunets, I.

AU - Schmitz, Jurriaan

AU - Polman, Albert

N1 - 10.1109/GROUP4.2009.5338358

PY - 2009/9/9

Y1 - 2009/9/9

N2 - This work demonstrates the fabrication of a silicon-based electrical source for surface plasmon polaritons (SPPs) at low temperatures using silicon nanocrystal doped alumina within a metal-insulator-metal (MIM) waveguide geometry. The fabrication method uses established microtechnology processes that are compatible with backend CMOS technology. The fabricated device suggests a route forward towards high density, active plasmonic circuits that are integrated with silicon microelectronics.

AB - This work demonstrates the fabrication of a silicon-based electrical source for surface plasmon polaritons (SPPs) at low temperatures using silicon nanocrystal doped alumina within a metal-insulator-metal (MIM) waveguide geometry. The fabrication method uses established microtechnology processes that are compatible with backend CMOS technology. The fabricated device suggests a route forward towards high density, active plasmonic circuits that are integrated with silicon microelectronics.

KW - METIS-265806

KW - SC-ICF: Integrated Circuit Fabrication

KW - EWI-17465

KW - IR-70009

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DO - 10.1109/GROUP4.2009.5338358

M3 - Conference contribution

SN - 978-1-4244-4402-1

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BT - Proceedings of the 6th International Conference on GroupIV Photonics GFP'09

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