This work demonstrates the fabrication of a silicon-based electrical source for surface plasmon polaritons (SPPs) at low temperatures using silicon nanocrystal doped alumina within a metal-insulator-metal (MIM) waveguide geometry. The fabrication method uses established microtechnology processes that are compatible with backend CMOS technology. The fabricated device suggests a route forward towards high density, active plasmonic circuits that are integrated with silicon microelectronics.
|Publisher||IEEE Computer Society Press|
|Conference||6th International Conference on GroupIV Photonics GFP'09|
|Period||9/09/09 → 11/09/09|
|Other||9-11 Sept 2009|
- SC-ICF: Integrated Circuit Fabrication