A Simple Method to Localize the Oxide Breakdown Regions and Hot Carriers Area Into VLSI Circuits

N.A. Akil, P. Le Minh, J. Holleman, V.E. Houtsma, P.H. Woerlee

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationDeuxieme Colloque Franco-Libanais sur la Science des Materiaux
    Place of PublicationBeyrouth, Liban
    Pages20-21
    Number of pages2
    Publication statusPublished - 25 May 2000

    Keywords

    • METIS-113896

    Cite this

    Akil, N. A., Le Minh, P., Holleman, J., Houtsma, V. E., & Woerlee, P. H. (2000). A Simple Method to Localize the Oxide Breakdown Regions and Hot Carriers Area Into VLSI Circuits. In Deuxieme Colloque Franco-Libanais sur la Science des Materiaux (pp. 20-21). Beyrouth, Liban.
    Akil, N.A. ; Le Minh, P. ; Holleman, J. ; Houtsma, V.E. ; Woerlee, P.H. / A Simple Method to Localize the Oxide Breakdown Regions and Hot Carriers Area Into VLSI Circuits. Deuxieme Colloque Franco-Libanais sur la Science des Materiaux. Beyrouth, Liban, 2000. pp. 20-21
    @inproceedings{d09b3fc4c1634ef0adaef43c0eb55468,
    title = "A Simple Method to Localize the Oxide Breakdown Regions and Hot Carriers Area Into VLSI Circuits",
    keywords = "METIS-113896",
    author = "N.A. Akil and {Le Minh}, P. and J. Holleman and V.E. Houtsma and P.H. Woerlee",
    year = "2000",
    month = "5",
    day = "25",
    language = "Undefined",
    pages = "20--21",
    booktitle = "Deuxieme Colloque Franco-Libanais sur la Science des Materiaux",

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    Akil, NA, Le Minh, P, Holleman, J, Houtsma, VE & Woerlee, PH 2000, A Simple Method to Localize the Oxide Breakdown Regions and Hot Carriers Area Into VLSI Circuits. in Deuxieme Colloque Franco-Libanais sur la Science des Materiaux. Beyrouth, Liban, pp. 20-21.

    A Simple Method to Localize the Oxide Breakdown Regions and Hot Carriers Area Into VLSI Circuits. / Akil, N.A.; Le Minh, P.; Holleman, J.; Houtsma, V.E.; Woerlee, P.H.

    Deuxieme Colloque Franco-Libanais sur la Science des Materiaux. Beyrouth, Liban, 2000. p. 20-21.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - A Simple Method to Localize the Oxide Breakdown Regions and Hot Carriers Area Into VLSI Circuits

    AU - Akil, N.A.

    AU - Le Minh, P.

    AU - Holleman, J.

    AU - Houtsma, V.E.

    AU - Woerlee, P.H.

    PY - 2000/5/25

    Y1 - 2000/5/25

    KW - METIS-113896

    M3 - Conference contribution

    SP - 20

    EP - 21

    BT - Deuxieme Colloque Franco-Libanais sur la Science des Materiaux

    CY - Beyrouth, Liban

    ER -

    Akil NA, Le Minh P, Holleman J, Houtsma VE, Woerlee PH. A Simple Method to Localize the Oxide Breakdown Regions and Hot Carriers Area Into VLSI Circuits. In Deuxieme Colloque Franco-Libanais sur la Science des Materiaux. Beyrouth, Liban. 2000. p. 20-21