A Simple Method to Localize the Oxide Breakdown Regions and Hot Carriers Area Into VLSI Circuits

N.A. Akil, P. Le Minh, J. Holleman, V.E. Houtsma, P.H. Woerlee

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationDeuxieme Colloque Franco-Libanais sur la Science des Materiaux
    Place of PublicationBeyrouth, Liban
    Pages20-21
    Number of pages2
    Publication statusPublished - 25 May 2000

    Keywords

    • METIS-113896

    Cite this

    Akil, N. A., Le Minh, P., Holleman, J., Houtsma, V. E., & Woerlee, P. H. (2000). A Simple Method to Localize the Oxide Breakdown Regions and Hot Carriers Area Into VLSI Circuits. In Deuxieme Colloque Franco-Libanais sur la Science des Materiaux (pp. 20-21). Beyrouth, Liban.