A Simple Method to Localize the Oxide Breakdown Regions and Hot Carriers Area Into VLSI Circuits

N.A. Akil, P. Le Minh, J. Holleman, V.E. Houtsma, P.H. Woerlee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Deuxieme Colloque Franco-Libanais sur la Science des Materiaux
Place of Publication	Beyrouth, Liban
Pages	20-21
Number of pages	2
Publication status	Published - 25 May 2000

Keywords

@inproceedings{d09b3fc4c1634ef0adaef43c0eb55468,

title = "A Simple Method to Localize the Oxide Breakdown Regions and Hot Carriers Area Into VLSI Circuits",

keywords = "METIS-113896",

author = "N.A. Akil and \{Le Minh\}, P. and J. Holleman and V.E. Houtsma and P.H. Woerlee",

year = "2000",

month = may,

day = "25",

language = "English",

pages = "20--21",

booktitle = "Deuxieme Colloque Franco-Libanais sur la Science des Materiaux",

}

TY - GEN

T1 - A Simple Method to Localize the Oxide Breakdown Regions and Hot Carriers Area Into VLSI Circuits

AU - Akil, N.A.

AU - Le Minh, P.

AU - Holleman, J.

AU - Houtsma, V.E.

AU - Woerlee, P.H.

PY - 2000/5/25

Y1 - 2000/5/25

KW - METIS-113896

M3 - Conference contribution

SP - 20

EP - 21

BT - Deuxieme Colloque Franco-Libanais sur la Science des Materiaux

CY - Beyrouth, Liban

ER -