A simple model describing the kinetic of CVD deposition of pure-boron layers from diborane

V. Mohammadi, W. B. De Boer, T. L.M. Scholtes, L. K. Nanver

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Abstract

In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of PureB-layers grown by chemicalvapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion mechanism of the diborane species through the stationary boundary layer over the wafer, the gas phase processes and the related surface reactions. This model is based on a wide range of input parameters, such as initial diborane partial pressure, total gas flow, axial position on the wafer, deposition temperature, activation energy of PureB deposition from diborane, surface Hcoverage and reactor dimensions. The model's predictive capabilities have been verified by experiments performed at 700 C in these two different ASM CVD reactors.

Original languageEnglish
Title of host publicationThermal and Plasma CVD of Nanostructures and Their Applications
PublisherThe Electrochemical Society Inc.
Pages57-65
Number of pages9
Edition31
ISBN (Print)9781623320546
DOIs
Publication statusPublished - 1 Jan 2013
Externally publishedYes
Event221st ECS Meeting 2012: 221st ECS Meeting - Washington State Convention Center , Seattle, United States
Duration: 6 May 201210 May 2012
https://www.electrochem.org/221

Publication series

NameECS Transactions
Number31
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference221st ECS Meeting 2012
CountryUnited States
CitySeattle
Period6/05/1210/05/12
Internet address

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