A simple model describing the kinetic of CVD deposition of pure-boron layers from diborane

V. Mohammadi; W. B. De Boer; T. L.M. Scholtes; L. K. Nanver

doi:10.1149/04531.0057ecst

A simple model describing the kinetic of CVD deposition of pure-boron layers from diborane

V. Mohammadi, W. B. De Boer, T. L.M. Scholtes, L. K. Nanver

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

Abstract

In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of PureB-layers grown by chemicalvapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion mechanism of the diborane species through the stationary boundary layer over the wafer, the gas phase processes and the related surface reactions. This model is based on a wide range of input parameters, such as initial diborane partial pressure, total gas flow, axial position on the wafer, deposition temperature, activation energy of PureB deposition from diborane, surface Hcoverage and reactor dimensions. The model's predictive capabilities have been verified by experiments performed at 700 C in these two different ASM CVD reactors.

Original language	English
Title of host publication	Thermal and Plasma CVD of Nanostructures and Their Applications
Publisher	The Electrochemical Society Inc.
Pages	57-65
Number of pages	9
Edition	31
ISBN (Print)	9781623320546
DOIs	https://doi.org/10.1149/04531.0057ecst
Publication status	Published - 1 Jan 2013
Externally published	Yes
Event	221st ECS Meeting 2012: 221st ECS Meeting - Washington State Convention Center , Seattle, United States Duration: 6 May 2012 → 10 May 2012 https://www.electrochem.org/221

Publication series

Name	ECS Transactions
Number	31
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	221st ECS Meeting 2012
Country/Territory	United States
City	Seattle
Period	6/05/12 → 10/05/12
Internet address	https://www.electrochem.org/221

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10.1149/04531.0057ecst

Cite this

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title = "A simple model describing the kinetic of CVD deposition of pure-boron layers from diborane",

abstract = "In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of PureB-layers grown by chemicalvapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion mechanism of the diborane species through the stationary boundary layer over the wafer, the gas phase processes and the related surface reactions. This model is based on a wide range of input parameters, such as initial diborane partial pressure, total gas flow, axial position on the wafer, deposition temperature, activation energy of PureB deposition from diborane, surface Hcoverage and reactor dimensions. The model's predictive capabilities have been verified by experiments performed at 700 C in these two different ASM CVD reactors.",

author = "V. Mohammadi and {De Boer}, {W. B.} and Scholtes, {T. L.M.} and Nanver, {L. K.}",

year = "2013",

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publisher = "The Electrochemical Society Inc.",

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booktitle = "Thermal and Plasma CVD of Nanostructures and Their Applications",

address = "United States",

edition = "31",

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Mohammadi, V, De Boer, WB, Scholtes, TLM & Nanver, LK 2013, A simple model describing the kinetic of CVD deposition of pure-boron layers from diborane. in Thermal and Plasma CVD of Nanostructures and Their Applications. 31 edn, ECS Transactions, no. 31, vol. 45, The Electrochemical Society Inc., pp. 57-65, 221st ECS Meeting 2012, Seattle, Washington, United States, 6/05/12. https://doi.org/10.1149/04531.0057ecst

A simple model describing the kinetic of CVD deposition of pure-boron layers from diborane. / Mohammadi, V.; De Boer, W. B.; Scholtes, T. L.M. et al.

Thermal and Plasma CVD of Nanostructures and Their Applications. 31. ed. The Electrochemical Society Inc., 2013. p. 57-65 (ECS Transactions; Vol. 45, No. 31).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - A simple model describing the kinetic of CVD deposition of pure-boron layers from diborane

AU - Mohammadi, V.

AU - De Boer, W. B.

AU - Scholtes, T. L.M.

AU - Nanver, L. K.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of PureB-layers grown by chemicalvapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion mechanism of the diborane species through the stationary boundary layer over the wafer, the gas phase processes and the related surface reactions. This model is based on a wide range of input parameters, such as initial diborane partial pressure, total gas flow, axial position on the wafer, deposition temperature, activation energy of PureB deposition from diborane, surface Hcoverage and reactor dimensions. The model's predictive capabilities have been verified by experiments performed at 700 C in these two different ASM CVD reactors.

AB - In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of PureB-layers grown by chemicalvapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion mechanism of the diborane species through the stationary boundary layer over the wafer, the gas phase processes and the related surface reactions. This model is based on a wide range of input parameters, such as initial diborane partial pressure, total gas flow, axial position on the wafer, deposition temperature, activation energy of PureB deposition from diborane, surface Hcoverage and reactor dimensions. The model's predictive capabilities have been verified by experiments performed at 700 C in these two different ASM CVD reactors.

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T3 - ECS Transactions

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BT - Thermal and Plasma CVD of Nanostructures and Their Applications

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ER -

A simple model describing the kinetic of CVD deposition of pure-boron layers from diborane

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