A single-mask thermal displacement sensor in MEMS

B. Krijnen; R.P. Hogervorst; J.W. van Dijk; J.B.C. Engelen; L.A. Woldering; D.M. Brouwer; L. Abelmann; H.M.J.R. Soemers

doi:10.1088/0960-1317/21/7/074007

A single-mask thermal displacement sensor in MEMS

B. Krijnen, R.P. Hogervorst, J.W. van Dijk, J.B.C. Engelen, L.A. Woldering, D.M. Brouwer, L. Abelmann, H.M.J.R. Soemers

Research output: Contribution to journal › Article › Academic › peer-review

28 Citations (Scopus)

Abstract

This work presents a MEMS displacement sensor based on the conductive heat transfer of a resistively heated silicon structure towards an actuated stage parallel to the structure. This differential sensor can be easily incorporated into a silicon-on-insulator-based process, and fabricated within the same mask as electrostatic actuators and flexure-based stages. We discuss a lumped capacitance model to optimize the sensor sensitivity as a function of the doping concentration, the operating temperature, the heater length and width. We demonstrate various sensor designs. The typical sensor resolution is 2 nm within a bandwidth of 25 Hz at a full scale range of 110 μm.

Original language	English
Pages (from-to)	074007-074019
Number of pages	13
Journal	Journal of micromechanics and microengineering
Volume	21
Issue number	7
DOIs	https://doi.org/10.1088/0960-1317/21/7/074007
Publication status	Published - 23 Jun 2011

Keywords

TST-uSPAM: micro Scanning Probe Array Memory
TST-SMI: Formerly in EWI-SMI

Access to Document

10.1088/0960-1317/21/7/074007

Cite this

@article{b5bb1ad9ee1243bdb738879ccfd673f2,

title = "A single-mask thermal displacement sensor in MEMS",

abstract = "This work presents a MEMS displacement sensor based on the conductive heat transfer of a resistively heated silicon structure towards an actuated stage parallel to the structure. This differential sensor can be easily incorporated into a silicon-on-insulator-based process, and fabricated within the same mask as electrostatic actuators and flexure-based stages. We discuss a lumped capacitance model to optimize the sensor sensitivity as a function of the doping concentration, the operating temperature, the heater length and width. We demonstrate various sensor designs. The typical sensor resolution is 2 nm within a bandwidth of 25 Hz at a full scale range of 110 μm.",

keywords = "TST-uSPAM: micro Scanning Probe Array Memory, TST-SMI: Formerly in EWI-SMI",

author = "B. Krijnen and R.P. Hogervorst and {van Dijk}, J.W. and J.B.C. Engelen and L.A. Woldering and D.M. Brouwer and L. Abelmann and H.M.J.R. Soemers",

note = "eemcs-eprint-20280 ",

year = "2011",

month = jun,

day = "23",

doi = "10.1088/0960-1317/21/7/074007",

language = "English",

volume = "21",

pages = "074007--074019",

journal = "Journal of micromechanics and microengineering",

issn = "0960-1317",

publisher = "IOP Publishing Ltd.",

number = "7",

}

TY - JOUR

T1 - A single-mask thermal displacement sensor in MEMS

AU - Krijnen, B.

AU - Hogervorst, R.P.

AU - van Dijk, J.W.

AU - Engelen, J.B.C.

AU - Woldering, L.A.

AU - Brouwer, D.M.

AU - Abelmann, L.

AU - Soemers, H.M.J.R.

N1 - eemcs-eprint-20280

PY - 2011/6/23

Y1 - 2011/6/23

N2 - This work presents a MEMS displacement sensor based on the conductive heat transfer of a resistively heated silicon structure towards an actuated stage parallel to the structure. This differential sensor can be easily incorporated into a silicon-on-insulator-based process, and fabricated within the same mask as electrostatic actuators and flexure-based stages. We discuss a lumped capacitance model to optimize the sensor sensitivity as a function of the doping concentration, the operating temperature, the heater length and width. We demonstrate various sensor designs. The typical sensor resolution is 2 nm within a bandwidth of 25 Hz at a full scale range of 110 μm.

AB - This work presents a MEMS displacement sensor based on the conductive heat transfer of a resistively heated silicon structure towards an actuated stage parallel to the structure. This differential sensor can be easily incorporated into a silicon-on-insulator-based process, and fabricated within the same mask as electrostatic actuators and flexure-based stages. We discuss a lumped capacitance model to optimize the sensor sensitivity as a function of the doping concentration, the operating temperature, the heater length and width. We demonstrate various sensor designs. The typical sensor resolution is 2 nm within a bandwidth of 25 Hz at a full scale range of 110 μm.

KW - TST-uSPAM: micro Scanning Probe Array Memory

KW - TST-SMI: Formerly in EWI-SMI

U2 - 10.1088/0960-1317/21/7/074007

DO - 10.1088/0960-1317/21/7/074007

M3 - Article

VL - 21

SP - 74007

EP - 74019

JO - Journal of micromechanics and microengineering

JF - Journal of micromechanics and microengineering

SN - 0960-1317

IS - 7

ER -

A single-mask thermal displacement sensor in MEMS

Abstract

Keywords

Access to Document

Fingerprint

Cite this