A single-mask thermal displacement sensor in MEMS

B. Krijnen, R.P. Hogervorst, J.W. van Dijk, J.B.C. Engelen, L.A. Woldering, D.M. Brouwer, L. Abelmann, H.M.J.R. Soemers

    Research output: Contribution to journalArticleAcademicpeer-review

    28 Citations (Scopus)


    This work presents a MEMS displacement sensor based on the conductive heat transfer of a resistively heated silicon structure towards an actuated stage parallel to the structure. This differential sensor can be easily incorporated into a silicon-on-insulator-based process, and fabricated within the same mask as electrostatic actuators and flexure-based stages. We discuss a lumped capacitance model to optimize the sensor sensitivity as a function of the doping concentration, the operating temperature, the heater length and width. We demonstrate various sensor designs. The typical sensor resolution is 2 nm within a bandwidth of 25 Hz at a full scale range of 110 μm.
    Original languageEnglish
    Pages (from-to)074007-074019
    Number of pages13
    JournalJournal of micromechanics and microengineering
    Issue number7
    Publication statusPublished - 23 Jun 2011


    • TST-uSPAM: micro Scanning Probe Array Memory
    • TST-SMI: Formerly in EWI-SMI


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