Abstract
Position sensing in MEMS is often based on the principle of varying capacitance [1]. Alternative position sensing principles include using integrated optical waveguides
[2] or varying thermal conductance [3]. Lantz et al demonstrated a thermal displacement sensor achieving nanometre resolution on a 100mm range. However a multi-mask production process and manual assembly were needed to fabricate this displacement sensor. In this work we present a 1-DOF thermal displacement sensor integrated with an actuated stage, and its experimental characterization. The system was fabricated in the device layer of a silicon-on-insulator (SOI) wafer using a single-mask process.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the Tenth International Conference of the European Society for Precision Engineering & Nanotechnology |
| Place of Publication | Delft |
| Publisher | Delft University of Technology |
| Pages | 462-465 |
| Number of pages | 4 |
| ISBN (Print) | 978-0-9553082-8-4 |
| Publication status | Published - Jun 2010 |
| Event | 10th EUSPEN International Conference 2010 - Delft, Netherlands Duration: 31 May 2010 → 4 Jun 2010 Conference number: 10 |
Conference
| Conference | 10th EUSPEN International Conference 2010 |
|---|---|
| Abbreviated title | EUSPEN |
| Country/Territory | Netherlands |
| City | Delft |
| Period | 31/05/10 → 4/06/10 |
| Other | NOT the same as 10th Anniversary International Conference (see dates and place) |
Keywords
- TST-SMI: Formerly in EWI-SMI
- TST-uSPAM: micro Scanning Probe Array Memory