Abstract
| Original language | Undefined |
|---|---|
| Title of host publication | Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures |
| Place of Publication | Piscataway |
| Publisher | IEEE Computer Society |
| Pages | 199-204 |
| Number of pages | 6 |
| ISBN (Print) | 978-1-4244-1801-5 |
| DOIs | |
| Publication status | Published - 24 Mar 2008 |
| Event | 21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008 - University of Edinburgh, Edinburgh, United Kingdom Duration: 24 Mar 2008 → 27 Mar 2008 Conference number: 21 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog08.pdf |
Publication series
| Name | |
|---|---|
| Publisher | IEEE Computer Society Press |
| Number | DTR08-9 |
Conference
| Conference | 21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008 |
|---|---|
| Abbreviated title | ICMTS |
| Country | United Kingdom |
| City | Edinburgh |
| Period | 24/03/08 → 27/03/08 |
| Internet address |
Keywords
- EWI-13057
- IR-64875
- METIS-251077
- SC-ICF: Integrated Circuit Fabrication
Cite this
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A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances. / Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.
Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures. Piscataway : IEEE Computer Society, 2008. p. 199-204 10.1109/ICMTS.2008.4509338.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances
AU - Stavitski, N.
AU - Klootwijk, J.H.
AU - van Zeijl, H.W.
AU - Kovalgin, Alexeij Y.
AU - Wolters, Robertus A.M.
N1 - http://eprints.ewi.utwente.nl/13057
PY - 2008/3/24
Y1 - 2008/3/24
N2 - The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally. As a result, a model was developed to account for the actual current flow and a method for reliable �?c extraction was created. It was found that in our case of metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.
AB - The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally. As a result, a model was developed to account for the actual current flow and a method for reliable �?c extraction was created. It was found that in our case of metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.
KW - EWI-13057
KW - IR-64875
KW - METIS-251077
KW - SC-ICF: Integrated Circuit Fabrication
U2 - 10.1109/ICMTS.2008.4509338
DO - 10.1109/ICMTS.2008.4509338
M3 - Conference contribution
SN - 978-1-4244-1801-5
SP - 199
EP - 204
BT - Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures
PB - IEEE Computer Society
CY - Piscataway
ER -