Abstract
The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally. As a result, a model was developed to account for the actual current flow and a method for reliable �?c extraction was created. It was found that in our case of metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.
Original language | Undefined |
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Title of host publication | Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures |
Place of Publication | Piscataway |
Publisher | IEEE Computer Society |
Pages | 199-204 |
Number of pages | 6 |
ISBN (Print) | 978-1-4244-1801-5 |
DOIs | |
Publication status | Published - 24 Mar 2008 |
Event | 21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008 - University of Edinburgh, Edinburgh, United Kingdom Duration: 24 Mar 2008 → 27 Mar 2008 Conference number: 21 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog08.pdf |
Publication series
Name | |
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Publisher | IEEE Computer Society Press |
Number | DTR08-9 |
Conference
Conference | 21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008 |
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Abbreviated title | ICMTS |
Country/Territory | United Kingdom |
City | Edinburgh |
Period | 24/03/08 → 27/03/08 |
Internet address |
Keywords
- EWI-13057
- IR-64875
- METIS-251077
- SC-ICF: Integrated Circuit Fabrication