A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances

N. Stavitski, J.H. Klootwijk, H.W. van Zeijl, Alexeij Y. Kovalgin, Robertus A.M. Wolters

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    The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally. As a result, a model was developed to account for the actual current flow and a method for reliable �?c extraction was created. It was found that in our case of metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.
    Original languageUndefined
    Title of host publicationProceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures
    Place of PublicationPiscataway
    Number of pages6
    ISBN (Print)978-1-4244-1801-5
    Publication statusPublished - 24 Mar 2008
    Event21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008 - University of Edinburgh, Edinburgh, United Kingdom
    Duration: 24 Mar 200827 Mar 2008
    Conference number: 21

    Publication series

    PublisherIEEE Computer Society Press


    Conference21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008
    Abbreviated titleICMTS
    Country/TerritoryUnited Kingdom
    Internet address


    • EWI-13057
    • IR-64875
    • METIS-251077
    • SC-ICF: Integrated Circuit Fabrication

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