A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances

N. Stavitski; J.H. Klootwijk; H.W. van Zeijl; Alexeij Y. Kovalgin; Robertus A.M. Wolters

doi:10.1109/ICMTS.2008.4509338

A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances

N. Stavitski, J.H. Klootwijk, H.W. van Zeijl, Alexeij Y. Kovalgin, Robertus A.M. Wolters

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

282 Downloads (Pure)

Abstract

The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally. As a result, a model was developed to account for the actual current flow and a method for reliable �?c extraction was created. It was found that in our case of metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.

Original language	Undefined
Title of host publication	Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures
Place of Publication	Piscataway
Publisher	IEEE Computer Society
Pages	199-204
Number of pages	6
ISBN (Print)	978-1-4244-1801-5
DOIs	https://doi.org/10.1109/ICMTS.2008.4509338
Publication status	Published - 24 Mar 2008
Event	21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008 - University of Edinburgh, Edinburgh, United Kingdom Duration: 24 Mar 2008 → 27 Mar 2008 Conference number: 21 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog08.pdf

Publication series

Name
Publisher	IEEE Computer Society Press
Number	DTR08-9

Conference

Conference	21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008
Abbreviated title	ICMTS
Country	United Kingdom
City	Edinburgh
Period	24/03/08 → 27/03/08
Internet address	http://www.homepages.ed.ac.uk/ajw/ICMTS/prog08.pdf

Keywords

EWI-13057
IR-64875
METIS-251077
SC-ICF: Integrated Circuit Fabrication

Access to Document

10.1109/ICMTS.2008.4509338

stavitski
open
stavitski
open

Cite this

Stavitski, N., Klootwijk, J. H., van Zeijl, H. W., Kovalgin, A. Y., & Wolters, R. A. M. (2008). A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances. In Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures (pp. 199-204). [10.1109/ICMTS.2008.4509338] Piscataway: IEEE Computer Society. https://doi.org/10.1109/ICMTS.2008.4509338

@inproceedings{6a645b0f1077411fac1285c05e446a74,

title = "A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances",

abstract = "The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally. As a result, a model was developed to account for the actual current flow and a method for reliable �?c extraction was created. It was found that in our case of metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.",

keywords = "EWI-13057, IR-64875, METIS-251077, SC-ICF: Integrated Circuit Fabrication",

author = "N. Stavitski and J.H. Klootwijk and {van Zeijl}, H.W. and Kovalgin, {Alexeij Y.} and Wolters, {Robertus A.M.}",

note = "http://eprints.ewi.utwente.nl/13057",

year = "2008",

month = "3",

day = "24",

doi = "10.1109/ICMTS.2008.4509338",

language = "Undefined",

isbn = "978-1-4244-1801-5",

publisher = "IEEE Computer Society",

number = "DTR08-9",

pages = "199--204",

booktitle = "Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures",

address = "United States",

}

Stavitski, N, Klootwijk, JH, van Zeijl, HW, Kovalgin, AY & Wolters, RAM 2008, A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances. in Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures., 10.1109/ICMTS.2008.4509338, IEEE Computer Society, Piscataway, pp. 199-204, 21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008, Edinburgh, United Kingdom, 24/03/08. https://doi.org/10.1109/ICMTS.2008.4509338

A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances. / Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures. Piscataway : IEEE Computer Society, 2008. p. 199-204 10.1109/ICMTS.2008.4509338.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances

AU - Stavitski, N.

AU - Klootwijk, J.H.

AU - van Zeijl, H.W.

AU - Kovalgin, Alexeij Y.

AU - Wolters, Robertus A.M.

N1 - http://eprints.ewi.utwente.nl/13057

PY - 2008/3/24

Y1 - 2008/3/24

N2 - The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally. As a result, a model was developed to account for the actual current flow and a method for reliable �?c extraction was created. It was found that in our case of metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.

AB - The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally. As a result, a model was developed to account for the actual current flow and a method for reliable �?c extraction was created. It was found that in our case of metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.

KW - EWI-13057

KW - IR-64875

KW - METIS-251077

KW - SC-ICF: Integrated Circuit Fabrication

U2 - 10.1109/ICMTS.2008.4509338

DO - 10.1109/ICMTS.2008.4509338

M3 - Conference contribution

SN - 978-1-4244-1801-5

SP - 199

EP - 204

BT - Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures

PB - IEEE Computer Society

CY - Piscataway

ER -

Stavitski N, Klootwijk JH, van Zeijl HW, Kovalgin AY , Wolters RAM. A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances. In Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures. Piscataway: IEEE Computer Society. 2008. p. 199-204. 10.1109/ICMTS.2008.4509338 https://doi.org/10.1109/ICMTS.2008.4509338