A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances

N. Stavitski, J.H. Klootwijk, H.W. van Zeijl, Alexeij Y. Kovalgin, Robertus A.M. Wolters

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    6 Citations (Scopus)
    213 Downloads (Pure)

    Abstract

    The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally. As a result, a model was developed to account for the actual current flow and a method for reliable �?c extraction was created. It was found that in our case of metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.
    Original languageUndefined
    Title of host publicationProceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures
    Place of PublicationPiscataway
    PublisherIEEE Computer Society
    Pages199-204
    Number of pages6
    ISBN (Print)978-1-4244-1801-5
    DOIs
    Publication statusPublished - 24 Mar 2008
    Event21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008 - University of Edinburgh, Edinburgh, United Kingdom
    Duration: 24 Mar 200827 Mar 2008
    Conference number: 21
    http://www.homepages.ed.ac.uk/ajw/ICMTS/prog08.pdf

    Publication series

    Name
    PublisherIEEE Computer Society Press
    NumberDTR08-9

    Conference

    Conference21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008
    Abbreviated titleICMTS
    CountryUnited Kingdom
    CityEdinburgh
    Period24/03/0827/03/08
    Internet address

    Keywords

    • EWI-13057
    • IR-64875
    • METIS-251077
    • SC-ICF: Integrated Circuit Fabrication

    Cite this

    Stavitski, N., Klootwijk, J. H., van Zeijl, H. W., Kovalgin, A. Y., & Wolters, R. A. M. (2008). A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances. In Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures (pp. 199-204). [10.1109/ICMTS.2008.4509338] Piscataway: IEEE Computer Society. https://doi.org/10.1109/ICMTS.2008.4509338
    Stavitski, N. ; Klootwijk, J.H. ; van Zeijl, H.W. ; Kovalgin, Alexeij Y. ; Wolters, Robertus A.M. / A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances. Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures. Piscataway : IEEE Computer Society, 2008. pp. 199-204
    @inproceedings{6a645b0f1077411fac1285c05e446a74,
    title = "A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances",
    abstract = "The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally. As a result, a model was developed to account for the actual current flow and a method for reliable �?c extraction was created. It was found that in our case of metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.",
    keywords = "EWI-13057, IR-64875, METIS-251077, SC-ICF: Integrated Circuit Fabrication",
    author = "N. Stavitski and J.H. Klootwijk and {van Zeijl}, H.W. and Kovalgin, {Alexeij Y.} and Wolters, {Robertus A.M.}",
    note = "http://eprints.ewi.utwente.nl/13057",
    year = "2008",
    month = "3",
    day = "24",
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    language = "Undefined",
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    Stavitski, N, Klootwijk, JH, van Zeijl, HW, Kovalgin, AY & Wolters, RAM 2008, A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances. in Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures., 10.1109/ICMTS.2008.4509338, IEEE Computer Society, Piscataway, pp. 199-204, 21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008, Edinburgh, United Kingdom, 24/03/08. https://doi.org/10.1109/ICMTS.2008.4509338

    A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances. / Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

    Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures. Piscataway : IEEE Computer Society, 2008. p. 199-204 10.1109/ICMTS.2008.4509338.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    AU - Kovalgin, Alexeij Y.

    AU - Wolters, Robertus A.M.

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    N2 - The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally. As a result, a model was developed to account for the actual current flow and a method for reliable �?c extraction was created. It was found that in our case of metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.

    AB - The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally. As a result, a model was developed to account for the actual current flow and a method for reliable �?c extraction was created. It was found that in our case of metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.

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    Stavitski N, Klootwijk JH, van Zeijl HW, Kovalgin AY, Wolters RAM. A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances. In Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures. Piscataway: IEEE Computer Society. 2008. p. 199-204. 10.1109/ICMTS.2008.4509338 https://doi.org/10.1109/ICMTS.2008.4509338