A study of morphology and texture of LPCVD germanium-silicon films

Alexeij Y. Kovalgin, J. Holleman

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

In this work, LPCVD Germanium-Silicon films were deposited on thermally oxidised silicon wafers using a horizontal LPCVD system, at a deposition temperature in the range between 430 and 480 °C and total pressure between 5 and 200 Pa. Pure GeH4 and SiH4 gases were used as precursors. Morphology and texture of the GexSi1-x (X=0.3-0.6) films were investigated versus deposition parameters. It has been shown that at the deposition temperature of 430 °C and total pressure of 20 Pa the grain size varied between 40 and 80 nm for a <100-nm thick poly-Ge0.6Si0.4 film, and the root-mean-square surface roughness did not exceed 2.5 nm. A decrease of the Germanium content from 60 to 40 atomic percent caused an increase of both the grain size and surface roughness due to nucleation matters. The polycrystalline layers mainly contained (110)- and (111)-oriented grains with its ratio depending on both deposition pressure and film thickness. The appearance of the big grains and roughening of the surface was also observed with increasing film thickness. Rising the total pressure above a certain level (100-200 Pa) caused an enhanced formation of the amorphous phase and appearance of randomly situated surface convexities. Reducing the total pressure below 10 Pa led to roughening of the surface, probably due to a dominance of (111)-oriented grains in the film bulk at such a low pressure.
Original languageUndefined
Pages (from-to)Pr3-47-Pr3-54
Number of pages8
JournalJournal de physique IV
VolumeIV
DOIs
Publication statusPublished - 2001

Keywords

  • Surfaces
  • Semiconductor materials
  • Polycrystals
  • Thin Films
  • Texture
  • Solid solutions
  • EWI-15620
  • IR-67775
  • Binary alloys
  • Experimental study
  • Atomic Force Microscopy
  • Crystal growth from vapors
  • Films
  • Morphology
  • Germanium alloys
  • Roughness
  • SEM
  • Low pressure
  • Nonmetals
  • Silicon alloys
  • TEM

Cite this

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title = "A study of morphology and texture of LPCVD germanium-silicon films",
abstract = "In this work, LPCVD Germanium-Silicon films were deposited on thermally oxidised silicon wafers using a horizontal LPCVD system, at a deposition temperature in the range between 430 and 480 °C and total pressure between 5 and 200 Pa. Pure GeH4 and SiH4 gases were used as precursors. Morphology and texture of the GexSi1-x (X=0.3-0.6) films were investigated versus deposition parameters. It has been shown that at the deposition temperature of 430 °C and total pressure of 20 Pa the grain size varied between 40 and 80 nm for a <100-nm thick poly-Ge0.6Si0.4 film, and the root-mean-square surface roughness did not exceed 2.5 nm. A decrease of the Germanium content from 60 to 40 atomic percent caused an increase of both the grain size and surface roughness due to nucleation matters. The polycrystalline layers mainly contained (110)- and (111)-oriented grains with its ratio depending on both deposition pressure and film thickness. The appearance of the big grains and roughening of the surface was also observed with increasing film thickness. Rising the total pressure above a certain level (100-200 Pa) caused an enhanced formation of the amorphous phase and appearance of randomly situated surface convexities. Reducing the total pressure below 10 Pa led to roughening of the surface, probably due to a dominance of (111)-oriented grains in the film bulk at such a low pressure.",
keywords = "Surfaces, Semiconductor materials, Polycrystals, Thin Films, Texture, Solid solutions, EWI-15620, IR-67775, Binary alloys, Experimental study, Atomic Force Microscopy, Crystal growth from vapors, Films, Morphology, Germanium alloys, Roughness, SEM, Low pressure, Nonmetals, Silicon alloys, TEM",
author = "Kovalgin, {Alexeij Y.} and J. Holleman",
year = "2001",
doi = "10.1051/jp4:2001306",
language = "Undefined",
volume = "IV",
pages = "Pr3--47--Pr3--54",
journal = "European physical journal. Special topics",
issn = "1951-6355",
publisher = "EDP Sciences",

}

A study of morphology and texture of LPCVD germanium-silicon films. / Kovalgin, Alexeij Y.; Holleman, J.

In: Journal de physique IV, Vol. IV, 2001, p. Pr3-47-Pr3-54.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - A study of morphology and texture of LPCVD germanium-silicon films

AU - Kovalgin, Alexeij Y.

AU - Holleman, J.

PY - 2001

Y1 - 2001

N2 - In this work, LPCVD Germanium-Silicon films were deposited on thermally oxidised silicon wafers using a horizontal LPCVD system, at a deposition temperature in the range between 430 and 480 °C and total pressure between 5 and 200 Pa. Pure GeH4 and SiH4 gases were used as precursors. Morphology and texture of the GexSi1-x (X=0.3-0.6) films were investigated versus deposition parameters. It has been shown that at the deposition temperature of 430 °C and total pressure of 20 Pa the grain size varied between 40 and 80 nm for a <100-nm thick poly-Ge0.6Si0.4 film, and the root-mean-square surface roughness did not exceed 2.5 nm. A decrease of the Germanium content from 60 to 40 atomic percent caused an increase of both the grain size and surface roughness due to nucleation matters. The polycrystalline layers mainly contained (110)- and (111)-oriented grains with its ratio depending on both deposition pressure and film thickness. The appearance of the big grains and roughening of the surface was also observed with increasing film thickness. Rising the total pressure above a certain level (100-200 Pa) caused an enhanced formation of the amorphous phase and appearance of randomly situated surface convexities. Reducing the total pressure below 10 Pa led to roughening of the surface, probably due to a dominance of (111)-oriented grains in the film bulk at such a low pressure.

AB - In this work, LPCVD Germanium-Silicon films were deposited on thermally oxidised silicon wafers using a horizontal LPCVD system, at a deposition temperature in the range between 430 and 480 °C and total pressure between 5 and 200 Pa. Pure GeH4 and SiH4 gases were used as precursors. Morphology and texture of the GexSi1-x (X=0.3-0.6) films were investigated versus deposition parameters. It has been shown that at the deposition temperature of 430 °C and total pressure of 20 Pa the grain size varied between 40 and 80 nm for a <100-nm thick poly-Ge0.6Si0.4 film, and the root-mean-square surface roughness did not exceed 2.5 nm. A decrease of the Germanium content from 60 to 40 atomic percent caused an increase of both the grain size and surface roughness due to nucleation matters. The polycrystalline layers mainly contained (110)- and (111)-oriented grains with its ratio depending on both deposition pressure and film thickness. The appearance of the big grains and roughening of the surface was also observed with increasing film thickness. Rising the total pressure above a certain level (100-200 Pa) caused an enhanced formation of the amorphous phase and appearance of randomly situated surface convexities. Reducing the total pressure below 10 Pa led to roughening of the surface, probably due to a dominance of (111)-oriented grains in the film bulk at such a low pressure.

KW - Surfaces

KW - Semiconductor materials

KW - Polycrystals

KW - Thin Films

KW - Texture

KW - Solid solutions

KW - EWI-15620

KW - IR-67775

KW - Binary alloys

KW - Experimental study

KW - Atomic Force Microscopy

KW - Crystal growth from vapors

KW - Films

KW - Morphology

KW - Germanium alloys

KW - Roughness

KW - SEM

KW - Low pressure

KW - Nonmetals

KW - Silicon alloys

KW - TEM

U2 - 10.1051/jp4:2001306

DO - 10.1051/jp4:2001306

M3 - Article

VL - IV

SP - Pr3-47-Pr3-54

JO - European physical journal. Special topics

JF - European physical journal. Special topics

SN - 1951-6355

ER -