A study of thermal oxidation and plasma-enhanced oxidation/reduction of ALD TiN layers

I. Brunets, A.W. Groenland, A. Boogaard, Antonius A.I. Aarnink, Alexeij Y. Kovalgin

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    The applications of TiN films in IC technology (i.e., diffusion barrier, gate material, current conductor, and heater) are based on their high thermodynamic stability, low electrical resistivity, and high mechanical hardness. Sputtered stoichiometric TiN exhibits insignificant oxidation rate at temperatures below 4000 C [1], whereas a non- stoichiometric TiN starts to oxidize even at room temperature [2]. The oxidation behavior of thin TiN layers, realized by ALD technique, is hardly investigated. To further promote the use of ALD TiN in novel electron devices (e.g., 3D low-temperature electronics, TFTs, etc.) and for wafer post-processing, both the stability and evolution of the layer properties at different temperatures, during the device operation or processing in reactive plasmas, must be explored.
    Original languageUndefined
    Title of host publicationProceedings of the 18th International Conference on Atomical Layer Deposition ALD 2008
    Place of PublicationEindhoven, The Netherlands
    PublisherTUE
    PagesP-54
    ISBN (Print)not assigned
    Publication statusPublished - 29 Jun 2008
    Event8th International Conference on Atomical Layer Deposition, ALD 2008 - Bruges , Belgium
    Duration: 29 Jun 20082 Jul 2008
    Conference number: 8
    http://www.phys.tue.nl/ALD2008/

    Publication series

    Name
    PublisherTUe
    NumberDTR08-9

    Conference

    Conference8th International Conference on Atomical Layer Deposition, ALD 2008
    Abbreviated titleALD 2008
    CountryBelgium
    CityBruges
    Period29/06/082/07/08
    Internet address

    Keywords

    • SC-ICS: Integrated Chemical Sensors
    • IR-62390
    • METIS-251088
    • EWI-13073

    Cite this

    Brunets, I., Groenland, A. W., Boogaard, A., Aarnink, A. A. I., & Kovalgin, A. Y. (2008). A study of thermal oxidation and plasma-enhanced oxidation/reduction of ALD TiN layers. In Proceedings of the 18th International Conference on Atomical Layer Deposition ALD 2008 (pp. P-54). Eindhoven, The Netherlands: TUE.
    Brunets, I. ; Groenland, A.W. ; Boogaard, A. ; Aarnink, Antonius A.I. ; Kovalgin, Alexeij Y. / A study of thermal oxidation and plasma-enhanced oxidation/reduction of ALD TiN layers. Proceedings of the 18th International Conference on Atomical Layer Deposition ALD 2008. Eindhoven, The Netherlands : TUE, 2008. pp. P-54
    @inproceedings{48698885b77d4e3586edde7bfe83ceea,
    title = "A study of thermal oxidation and plasma-enhanced oxidation/reduction of ALD TiN layers",
    abstract = "The applications of TiN films in IC technology (i.e., diffusion barrier, gate material, current conductor, and heater) are based on their high thermodynamic stability, low electrical resistivity, and high mechanical hardness. Sputtered stoichiometric TiN exhibits insignificant oxidation rate at temperatures below 4000 C [1], whereas a non- stoichiometric TiN starts to oxidize even at room temperature [2]. The oxidation behavior of thin TiN layers, realized by ALD technique, is hardly investigated. To further promote the use of ALD TiN in novel electron devices (e.g., 3D low-temperature electronics, TFTs, etc.) and for wafer post-processing, both the stability and evolution of the layer properties at different temperatures, during the device operation or processing in reactive plasmas, must be explored.",
    keywords = "SC-ICS: Integrated Chemical Sensors, IR-62390, METIS-251088, EWI-13073",
    author = "I. Brunets and A.W. Groenland and A. Boogaard and Aarnink, {Antonius A.I.} and Kovalgin, {Alexeij Y.}",
    year = "2008",
    month = "6",
    day = "29",
    language = "Undefined",
    isbn = "not assigned",
    publisher = "TUE",
    number = "DTR08-9",
    pages = "P--54",
    booktitle = "Proceedings of the 18th International Conference on Atomical Layer Deposition ALD 2008",

    }

    Brunets, I, Groenland, AW, Boogaard, A, Aarnink, AAI & Kovalgin, AY 2008, A study of thermal oxidation and plasma-enhanced oxidation/reduction of ALD TiN layers. in Proceedings of the 18th International Conference on Atomical Layer Deposition ALD 2008. TUE, Eindhoven, The Netherlands, pp. P-54, 8th International Conference on Atomical Layer Deposition, ALD 2008, Bruges , Belgium, 29/06/08.

    A study of thermal oxidation and plasma-enhanced oxidation/reduction of ALD TiN layers. / Brunets, I.; Groenland, A.W.; Boogaard, A.; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.

    Proceedings of the 18th International Conference on Atomical Layer Deposition ALD 2008. Eindhoven, The Netherlands : TUE, 2008. p. P-54.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - A study of thermal oxidation and plasma-enhanced oxidation/reduction of ALD TiN layers

    AU - Brunets, I.

    AU - Groenland, A.W.

    AU - Boogaard, A.

    AU - Aarnink, Antonius A.I.

    AU - Kovalgin, Alexeij Y.

    PY - 2008/6/29

    Y1 - 2008/6/29

    N2 - The applications of TiN films in IC technology (i.e., diffusion barrier, gate material, current conductor, and heater) are based on their high thermodynamic stability, low electrical resistivity, and high mechanical hardness. Sputtered stoichiometric TiN exhibits insignificant oxidation rate at temperatures below 4000 C [1], whereas a non- stoichiometric TiN starts to oxidize even at room temperature [2]. The oxidation behavior of thin TiN layers, realized by ALD technique, is hardly investigated. To further promote the use of ALD TiN in novel electron devices (e.g., 3D low-temperature electronics, TFTs, etc.) and for wafer post-processing, both the stability and evolution of the layer properties at different temperatures, during the device operation or processing in reactive plasmas, must be explored.

    AB - The applications of TiN films in IC technology (i.e., diffusion barrier, gate material, current conductor, and heater) are based on their high thermodynamic stability, low electrical resistivity, and high mechanical hardness. Sputtered stoichiometric TiN exhibits insignificant oxidation rate at temperatures below 4000 C [1], whereas a non- stoichiometric TiN starts to oxidize even at room temperature [2]. The oxidation behavior of thin TiN layers, realized by ALD technique, is hardly investigated. To further promote the use of ALD TiN in novel electron devices (e.g., 3D low-temperature electronics, TFTs, etc.) and for wafer post-processing, both the stability and evolution of the layer properties at different temperatures, during the device operation or processing in reactive plasmas, must be explored.

    KW - SC-ICS: Integrated Chemical Sensors

    KW - IR-62390

    KW - METIS-251088

    KW - EWI-13073

    M3 - Conference contribution

    SN - not assigned

    SP - P-54

    BT - Proceedings of the 18th International Conference on Atomical Layer Deposition ALD 2008

    PB - TUE

    CY - Eindhoven, The Netherlands

    ER -

    Brunets I, Groenland AW, Boogaard A, Aarnink AAI, Kovalgin AY. A study of thermal oxidation and plasma-enhanced oxidation/reduction of ALD TiN layers. In Proceedings of the 18th International Conference on Atomical Layer Deposition ALD 2008. Eindhoven, The Netherlands: TUE. 2008. p. P-54