A sub-1-V Bandgap Voltage Reference in 32nm FinFET Technology

Anne J. Annema, P. Veldhorst, G Doornbos, Bram Nauta

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    25 Citations (Scopus)
    66 Downloads (Pure)

    Abstract

    The bulk CMOS technology is expected to scale down to about 32nm node and likely the successor would be the FinFET. The FinFET is an ultra-thin body multi-gate MOS transistor with among other characteristics a much higher voltage gain compared to a conventional bulk MOS transistor [1]. Bandgap reference circuits cannot be directly ported from bulk CMOS technologies to SOI FinFET technologies, because both conventional diodes cannot be realized in thin SOI layers and also, area-efficient resistors are not readily available in processes with only metal(lic) gates. In this paper, a sub-1V bandgap reference circuit is implemented in a 32nm SOI FinFET technology, with an architecture that significantly reduces the required total resistance value.
    Original languageEnglish
    Title of host publicationIEEE International Solid-State Circuits Conference
    Place of PublicationPiscataway
    PublisherIEEE Computer Society Press
    Pages332-333
    Number of pages2
    ISBN (Print)978-1-4244-3458-9
    DOIs
    Publication statusPublished - 8 Feb 2009
    EventIEEE International Solid-State Circuits Conference, ISSCC 2009 - San Francisco, United States
    Duration: 8 Feb 200912 Feb 2009

    Conference

    ConferenceIEEE International Solid-State Circuits Conference, ISSCC 2009
    Abbreviated titleISSCC
    CountryUnited States
    CitySan Francisco
    Period8/02/0912/02/09

    Keywords

    • reference circuits
    • EWI-15221
    • Silicon on Insulator
    • METIS-263776
    • IR-65428
    • MOSFET
    • nano electronics

    Fingerprint Dive into the research topics of 'A sub-1-V Bandgap Voltage Reference in 32nm FinFET Technology'. Together they form a unique fingerprint.

  • Cite this

    Annema, A. J., Veldhorst, P., Doornbos, G., & Nauta, B. (2009). A sub-1-V Bandgap Voltage Reference in 32nm FinFET Technology. In IEEE International Solid-State Circuits Conference (pp. 332-333). Piscataway: IEEE Computer Society Press. https://doi.org/10.1109/ISSCC.2009.4977443