A sub-1-V Bandgap Voltage Reference in 32nm FinFET Technology

Anne J. Annema, P. Veldhorst, G Doornbos, Bram Nauta

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    31 Citations (Scopus)
    284 Downloads (Pure)


    The bulk CMOS technology is expected to scale down to about 32nm node and likely the successor would be the FinFET. The FinFET is an ultra-thin body multi-gate MOS transistor with among other characteristics a much higher voltage gain compared to a conventional bulk MOS transistor [1]. Bandgap reference circuits cannot be directly ported from bulk CMOS technologies to SOI FinFET technologies, because both conventional diodes cannot be realized in thin SOI layers and also, area-efficient resistors are not readily available in processes with only metal(lic) gates. In this paper, a sub-1V bandgap reference circuit is implemented in a 32nm SOI FinFET technology, with an architecture that significantly reduces the required total resistance value.
    Original languageEnglish
    Title of host publicationIEEE International Solid-State Circuits Conference
    Place of PublicationPiscataway
    Number of pages2
    ISBN (Print)978-1-4244-3458-9
    Publication statusPublished - 8 Feb 2009
    EventIEEE International Solid-State Circuits Conference, ISSCC 2009 - San Francisco, United States
    Duration: 8 Feb 200912 Feb 2009


    ConferenceIEEE International Solid-State Circuits Conference, ISSCC 2009
    Abbreviated titleISSCC
    Country/TerritoryUnited States
    CitySan Francisco


    • reference circuits
    • EWI-15221
    • Silicon on Insulator
    • METIS-263776
    • IR-65428
    • MOSFET
    • nano electronics


    Dive into the research topics of 'A sub-1-V Bandgap Voltage Reference in 32nm FinFET Technology'. Together they form a unique fingerprint.

    Cite this