Abstract
| Original language | English |
|---|---|
| Title of host publication | IEEE Radio Frequency Integrated Circuits Symposium 2019 |
| Place of Publication | Boston, Massachusetts, US |
| Publisher | IEEE |
| Pages | 91-94 |
| Number of pages | 4 |
| ISBN (Electronic) | 978-1-7281-1701-0 |
| DOIs | |
| Publication status | Published - 3 Jun 2019 |
| Event | IEEE Radio Frequency Integrated Circuits Symposium 2019 - Boston Convention and Exhibition Center, Boston, United States Duration: 2 Jun 2019 → 4 Jun 2019 |
Conference
| Conference | IEEE Radio Frequency Integrated Circuits Symposium 2019 |
|---|---|
| Abbreviated title | RFIC 2019 |
| Country | United States |
| City | Boston |
| Period | 2/06/19 → 4/06/19 |
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Keywords
- passive mixer
- N-path filter
- mixer-first receiver
- bottom plate mixing
- capacitive stacking
- high linearity
- Low Power
- RF front-ends
Cite this
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A sub-mW all-passive RF front end with implicit capacitive stacking achieving 13 dB gain, 5 dB NF and +25 dBm OOB-IIP3. / Purushothaman, Vijaya Kumar; Klumperink, Eric A.M.; Trullas Clavere, Berta; Nauta, Bram .
IEEE Radio Frequency Integrated Circuits Symposium 2019. Boston, Massachusetts, US : IEEE, 2019. p. 91-94.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - A sub-mW all-passive RF front end with implicit capacitive stacking achieving 13 dB gain, 5 dB NF and +25 dBm OOB-IIP3
AU - Purushothaman, Vijaya Kumar
AU - Klumperink, Eric A.M.
AU - Trullas Clavere, Berta
AU - Nauta, Bram
PY - 2019/6/3
Y1 - 2019/6/3
N2 - Abstract—This paper presents a sub-mW mixer-first RF front-end that exploits a novel capacitive stacking technique in an altered bottom-plate N-path filter/mixer to achieve passive voltage gain and high-linearity at low noise figure. Capacitive stacking is realized implicitly by reading out the voltage from the bottom-plate of N-path capacitors instead of their top-plate, which provides a 2x gain at the read-out capacitors. Additional passive voltage gain is achieved using impedance upconversion while improving the out-of-band linearity performance of small switches. With no other active circuitry, only clock generation circuits determine the total power consumption of this RF frontend. A prototype is fabricated in GF22nm FDSOI technology. Operating at fLO= 1 GHz, the prototype achieves a voltage gain of 13 dB, 5 dB Noise Figure and +25=+66dBm Out-of-band IIP3/IIP2 at 160MHz offset while consuming only 600 _W of power from a 0.8V supply.
AB - Abstract—This paper presents a sub-mW mixer-first RF front-end that exploits a novel capacitive stacking technique in an altered bottom-plate N-path filter/mixer to achieve passive voltage gain and high-linearity at low noise figure. Capacitive stacking is realized implicitly by reading out the voltage from the bottom-plate of N-path capacitors instead of their top-plate, which provides a 2x gain at the read-out capacitors. Additional passive voltage gain is achieved using impedance upconversion while improving the out-of-band linearity performance of small switches. With no other active circuitry, only clock generation circuits determine the total power consumption of this RF frontend. A prototype is fabricated in GF22nm FDSOI technology. Operating at fLO= 1 GHz, the prototype achieves a voltage gain of 13 dB, 5 dB Noise Figure and +25=+66dBm Out-of-band IIP3/IIP2 at 160MHz offset while consuming only 600 _W of power from a 0.8V supply.
KW - passive mixer
KW - N-path filter
KW - mixer-first receiver
KW - bottom plate mixing
KW - capacitive stacking
KW - high linearity
KW - Low Power
KW - RF front-ends
U2 - 10.1109/RFIC.2019.8701860
DO - 10.1109/RFIC.2019.8701860
M3 - Conference contribution
SP - 91
EP - 94
BT - IEEE Radio Frequency Integrated Circuits Symposium 2019
PB - IEEE
CY - Boston, Massachusetts, US
ER -