A thermopneumatic micropump based on micro-engineering techniques

F.C.M. van de Pol, H.T.G. van Lintel, M. Elwenspoek, J.H.J. Fluitman

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    A new model is proposed for the low-frequency piezoelectric activity of ZnO films grown on CVD SiO2. In this MOS structure, with ZnO as the semiconductor, a depletion layer is induced by means of a d.c. bias voltage. Using standard semiconductor theory, an expression is derived relating the electric field in this depletion layer with the driving a.c. and d.c. voltages. Due to the built-in charge at the ZnO-SiO2 interface, a depletion layer exists, even when no d.c. bias is applied. We measured the vibration amplitude at resonance of the tip of a silicon cantilever, upon which the MOS structure was deposited, as function of a.c. and d.c. voltages. The results show good agreement with calculated curves.
    Original languageEnglish
    Pages (from-to)198-202
    Number of pages3
    JournalSensors and actuators. A: Physical
    Issue number1-3
    Publication statusPublished - Feb 1990
    Event5th International Conference on Solid-State Sensors and Actuators and Eurosensors III, Transducers '90 - Eurosensors III - Montreux, Switzerland
    Duration: 25 Jun 198930 Jun 1989
    Conference number: 5

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    van de Pol, F. C. M., van Lintel, H. T. G., Elwenspoek, M., & Fluitman, J. H. J. (1990). A thermopneumatic micropump based on micro-engineering techniques. Sensors and actuators. A: Physical, 21(1-3), 198-202. https://doi.org/10.1016/0924-4247(90)85038-6