A thermopneumatic micropump based on micro-engineering techniques

F.C.M. van de Pol, H.T.G. van Lintel, M. Elwenspoek, J.H.J. Fluitman

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    Abstract

    A new model is proposed for the low-frequency piezoelectric activity of ZnO films grown on CVD SiO2. In this MOS structure, with ZnO as the semiconductor, a depletion layer is induced by means of a d.c. bias voltage. Using standard semiconductor theory, an expression is derived relating the electric field in this depletion layer with the driving a.c. and d.c. voltages. Due to the built-in charge at the ZnO-SiO2 interface, a depletion layer exists, even when no d.c. bias is applied. We measured the vibration amplitude at resonance of the tip of a silicon cantilever, upon which the MOS structure was deposited, as function of a.c. and d.c. voltages. The results show good agreement with calculated curves.
    Original languageEnglish
    Pages (from-to)198-202
    Number of pages3
    JournalSensors and actuators. A: Physical
    Volume21
    Issue number1-3
    DOIs
    Publication statusPublished - Feb 1990
    Event5th International Conference on Solid-State Sensors and Actuators and Eurosensors III, Transducers '90 - Eurosensors III - Montreux, Switzerland
    Duration: 25 Jun 198930 Jun 1989
    Conference number: 5

    Fingerprint

    depletion
    engineering
    Semiconductor materials
    Electric potential
    electric potential
    Silicon
    Bias voltage
    Vibrations (mechanical)
    Chemical vapor deposition
    Electric fields
    vapor deposition
    low frequencies
    vibration
    electric fields
    silicon
    curves

    Cite this

    van de Pol, F. C. M., van Lintel, H. T. G., Elwenspoek, M., & Fluitman, J. H. J. (1990). A thermopneumatic micropump based on micro-engineering techniques. Sensors and actuators. A: Physical, 21(1-3), 198-202. https://doi.org/10.1016/0924-4247(90)85038-6
    van de Pol, F.C.M. ; van Lintel, H.T.G. ; Elwenspoek, M. ; Fluitman, J.H.J. / A thermopneumatic micropump based on micro-engineering techniques. In: Sensors and actuators. A: Physical. 1990 ; Vol. 21, No. 1-3. pp. 198-202.
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    title = "A thermopneumatic micropump based on micro-engineering techniques",
    abstract = "A new model is proposed for the low-frequency piezoelectric activity of ZnO films grown on CVD SiO2. In this MOS structure, with ZnO as the semiconductor, a depletion layer is induced by means of a d.c. bias voltage. Using standard semiconductor theory, an expression is derived relating the electric field in this depletion layer with the driving a.c. and d.c. voltages. Due to the built-in charge at the ZnO-SiO2 interface, a depletion layer exists, even when no d.c. bias is applied. We measured the vibration amplitude at resonance of the tip of a silicon cantilever, upon which the MOS structure was deposited, as function of a.c. and d.c. voltages. The results show good agreement with calculated curves.",
    author = "{van de Pol}, F.C.M. and {van Lintel}, H.T.G. and M. Elwenspoek and J.H.J. Fluitman",
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    van de Pol, FCM, van Lintel, HTG, Elwenspoek, M & Fluitman, JHJ 1990, 'A thermopneumatic micropump based on micro-engineering techniques', Sensors and actuators. A: Physical, vol. 21, no. 1-3, pp. 198-202. https://doi.org/10.1016/0924-4247(90)85038-6

    A thermopneumatic micropump based on micro-engineering techniques. / van de Pol, F.C.M.; van Lintel, H.T.G.; Elwenspoek, M.; Fluitman, J.H.J.

    In: Sensors and actuators. A: Physical, Vol. 21, No. 1-3, 02.1990, p. 198-202.

    Research output: Contribution to journalArticleAcademicpeer-review

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    N2 - A new model is proposed for the low-frequency piezoelectric activity of ZnO films grown on CVD SiO2. In this MOS structure, with ZnO as the semiconductor, a depletion layer is induced by means of a d.c. bias voltage. Using standard semiconductor theory, an expression is derived relating the electric field in this depletion layer with the driving a.c. and d.c. voltages. Due to the built-in charge at the ZnO-SiO2 interface, a depletion layer exists, even when no d.c. bias is applied. We measured the vibration amplitude at resonance of the tip of a silicon cantilever, upon which the MOS structure was deposited, as function of a.c. and d.c. voltages. The results show good agreement with calculated curves.

    AB - A new model is proposed for the low-frequency piezoelectric activity of ZnO films grown on CVD SiO2. In this MOS structure, with ZnO as the semiconductor, a depletion layer is induced by means of a d.c. bias voltage. Using standard semiconductor theory, an expression is derived relating the electric field in this depletion layer with the driving a.c. and d.c. voltages. Due to the built-in charge at the ZnO-SiO2 interface, a depletion layer exists, even when no d.c. bias is applied. We measured the vibration amplitude at resonance of the tip of a silicon cantilever, upon which the MOS structure was deposited, as function of a.c. and d.c. voltages. The results show good agreement with calculated curves.

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