A Transformer Isolated Driving Method for SiC MOSFETs with a Constant Negative Off Voltage

Guangyao Yu; Mohamad Ghaffarian Niasar; Dhanashree Ganeshpure; Thiago Batista Soeiro; Pavol Bauer

doi:10.1109/PEMC48073.2021.9432530

A Transformer Isolated Driving Method for SiC MOSFETs with a Constant Negative Off Voltage

Guangyao Yu, Mohamad Ghaffarian Niasar, Dhanashree Ganeshpure, Thiago Batista Soeiro, Pavol Bauer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

SiC MOSFETs have become more and more popular in recent years. Apart from its superior performance, attentions should be paid to its driving method. In this paper, an improved transformer driving circuit is proposed which can provide an almost constant negative turn-off voltage within a wide dutycycle range. Both simulation and experimental results are given to verify the effectiveness of this method.

Original language	English
Title of host publication	2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC)
Publisher	IEEE
Pages	39-45
Number of pages	7
ISBN (Print)	978-1-7281-5661-3
DOIs	https://doi.org/10.1109/PEMC48073.2021.9432530
Publication status	Published - 29 Apr 2021
Externally published	Yes
Event	IEEE 19th International Power Electronics and Motion Control Conference, PEMC 2021 - Gliwice, Poland, On-line Conference Duration: 25 Apr 2021 → 29 Apr 2021 Conference number: 19

Conference

Conference	IEEE 19th International Power Electronics and Motion Control Conference, PEMC 2021
Abbreviated title	PEMC 2021
City	On-line Conference
Period	25/04/21 → 29/04/21

Keywords

Performance evaluation
MOSFET
Silicon carbide
Conferences
Prototypes
Logic gates
Power electronics
n/a OA procedure

Access to Document

10.1109/PEMC48073.2021.9432530

Cite this

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title = "A Transformer Isolated Driving Method for SiC MOSFETs with a Constant Negative Off Voltage",

abstract = "SiC MOSFETs have become more and more popular in recent years. Apart from its superior performance, attentions should be paid to its driving method. In this paper, an improved transformer driving circuit is proposed which can provide an almost constant negative turn-off voltage within a wide dutycycle range. Both simulation and experimental results are given to verify the effectiveness of this method.",

keywords = "Performance evaluation, MOSFET, Silicon carbide, Conferences, Prototypes, Logic gates, Power electronics, n/a OA procedure",

author = "Guangyao Yu and Niasar, {Mohamad Ghaffarian} and Dhanashree Ganeshpure and Soeiro, {Thiago Batista} and Pavol Bauer",

year = "2021",

month = apr,

day = "29",

doi = "10.1109/PEMC48073.2021.9432530",

language = "English",

isbn = "978-1-7281-5661-3",

pages = "39--45",

booktitle = "2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC)",

publisher = "IEEE",

address = "United States",

note = "IEEE 19th International Power Electronics and Motion Control Conference, PEMC 2021, PEMC 2021 ; Conference date: 25-04-2021 Through 29-04-2021",

}

Yu, G, Niasar, MG, Ganeshpure, D, Soeiro, TB & Bauer, P 2021, A Transformer Isolated Driving Method for SiC MOSFETs with a Constant Negative Off Voltage. in 2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC)., 9432530, IEEE, pp. 39-45, IEEE 19th International Power Electronics and Motion Control Conference, PEMC 2021, On-line Conference, 25/04/21. https://doi.org/10.1109/PEMC48073.2021.9432530

A Transformer Isolated Driving Method for SiC MOSFETs with a Constant Negative Off Voltage. / Yu, Guangyao; Niasar, Mohamad Ghaffarian; Ganeshpure, Dhanashree et al.
2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC). IEEE, 2021. p. 39-45 9432530.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - A Transformer Isolated Driving Method for SiC MOSFETs with a Constant Negative Off Voltage

AU - Yu, Guangyao

AU - Niasar, Mohamad Ghaffarian

AU - Ganeshpure, Dhanashree

AU - Soeiro, Thiago Batista

AU - Bauer, Pavol

N1 - Conference code: 19

PY - 2021/4/29

Y1 - 2021/4/29

N2 - SiC MOSFETs have become more and more popular in recent years. Apart from its superior performance, attentions should be paid to its driving method. In this paper, an improved transformer driving circuit is proposed which can provide an almost constant negative turn-off voltage within a wide dutycycle range. Both simulation and experimental results are given to verify the effectiveness of this method.

AB - SiC MOSFETs have become more and more popular in recent years. Apart from its superior performance, attentions should be paid to its driving method. In this paper, an improved transformer driving circuit is proposed which can provide an almost constant negative turn-off voltage within a wide dutycycle range. Both simulation and experimental results are given to verify the effectiveness of this method.

KW - Performance evaluation

KW - MOSFET

KW - Silicon carbide

KW - Conferences

KW - Prototypes

KW - Logic gates

KW - Power electronics

KW - n/a OA procedure

U2 - 10.1109/PEMC48073.2021.9432530

DO - 10.1109/PEMC48073.2021.9432530

M3 - Conference contribution

SN - 978-1-7281-5661-3

SP - 39

EP - 45

BT - 2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC)

PB - IEEE

T2 - IEEE 19th International Power Electronics and Motion Control Conference, PEMC 2021

Y2 - 25 April 2021 through 29 April 2021

ER -

A Transformer Isolated Driving Method for SiC MOSFETs with a Constant Negative Off Voltage

Abstract

Conference

Keywords

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