A two dimensional analysis of a correlation between the interface nanoroughness and electric current capabilities in LPCVD oxides deposited on polycrystalline silicon

J.H. Klootwijk, C. Cobianu, V. Petrescu, H. van Kranenburg, P.H. Woerlee, Hans Wallinga

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of the Semiconductor Interface Specialist Conference
    Place of PublicationSan Diego
    Pages25-26
    Publication statusPublished - 8 Dec 1994

    Keywords

    • METIS-113978

    Cite this

    Klootwijk, J. H., Cobianu, C., Petrescu, V., van Kranenburg, H., Woerlee, P. H., & Wallinga, H. (1994). A two dimensional analysis of a correlation between the interface nanoroughness and electric current capabilities in LPCVD oxides deposited on polycrystalline silicon. In Proceedings of the Semiconductor Interface Specialist Conference (pp. 25-26). San Diego.