Abstract
This article presents a detector system consisting of three components, a CMOS imaging array, a gaseous-detector structure with a Micromegas layout, and a UV-photon sensitive CsI reflective photocathode. All three elements have been monolithically integrated using simple post-processing steps. The Micromegas structure and the CMOS imaging chip are not impacted by the CsI deposition. The detector operated reliably in He/isobutene mixtures and attained charge gains with single photons up to a level of 6x104. The Timepix CMOS array permitted high resolution imaging of single UV-photons. The system has an MTF50 of 0.4lp/pixel which corresponds to approximately 7lp/mm.
Original language | English |
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Pages (from-to) | 133-137 |
Number of pages | 5 |
Journal | Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment |
Volume | 628 |
DOIs | |
Publication status | Published - 6 Jul 2010 |
Keywords
- Gaseous radiation detectorMicromegasUV-photon detectionInGridCsI photocathodeCMOS post-processing
- SC-RID: Radiation Imaging detectors
- CsI photocathode
- InGrid
- CMOS post-processing
- MICROMEGAS
- UV photon detection
- Gaseous radiation detector