A Versatile Micro-Scale Silicon Sensor/Actuator with Low Power Consumption

A.Y. Kovalgin; J. Holleman; G. Iordache

doi:10.1109/ICSENS.2005.1597927

A Versatile Micro-Scale Silicon Sensor/Actuator with Low Power Consumption

A.Y. Kovalgin, J. Holleman, G. Iordache

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

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Abstract

We designed a CMOS compatible hot-surface silicon device operating at a power down to sub-μW. It has a pillarshaped structure with a nano-size (10-100 nm) conductive link between the electrodes separated by a SiO2 layer. The device is capable of maintaining a μm-size hot-surface area of several hundred degrees centigrade due to non-radiative recombination of carriers in a thin (13 nm) poly silicon surface layer. Such a device can be used as a light source, a heat source, as well as a sensitive detector of light and heat. As a direct application, we demonstrate the feasibility to perform as an adsorption-desorption sensor, and as a unit for activating chemisorption/decomposition (i.e. micro-reactor).

Original language	English
Title of host publication	Proceedings of the IEEE Sensors Conference 2005
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE
Pages	1225-1228
Number of pages	4
ISBN (Print)	0-7803-9056-3
DOIs	https://doi.org/10.1109/ICSENS.2005.1597927
Publication status	Published - 31 Oct 2006
Event	2005 IEEE Sensors Conference - Hyatt Regency Irvine, Irvine, United States Duration: 31 Oct 2005 → 3 Nov 2005 http://ewh.ieee.org/conf/sensors2005/

Conference

Conference	2005 IEEE Sensors Conference
Country/Territory	United States
City	Irvine
Period	31/10/05 → 3/11/05
Internet address	http://ewh.ieee.org/conf/sensors2005/

Keywords

SC-ICS: Integrated Chemical Sensors
Silicon
Actuators
Energy consumption
Chemical sensors
Electric resistance
Temperature sensors
Thermal resistance
Electrodes
Monitoring
Gas detectors

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10.1109/ICSENS.2005.1597927

Cite this

@inproceedings{b701c23a65824a7bacbf4384e7b628bc,

title = "A Versatile Micro-Scale Silicon Sensor/Actuator with Low Power Consumption",

abstract = "We designed a CMOS compatible hot-surface silicon device operating at a power down to sub-μW. It has a pillarshaped structure with a nano-size (10-100 nm) conductive link between the electrodes separated by a SiO2 layer. The device is capable of maintaining a μm-size hot-surface area of several hundred degrees centigrade due to non-radiative recombination of carriers in a thin (13 nm) poly silicon surface layer. Such a device can be used as a light source, a heat source, as well as a sensitive detector of light and heat. As a direct application, we demonstrate the feasibility to perform as an adsorption-desorption sensor, and as a unit for activating chemisorption/decomposition (i.e. micro-reactor).",

keywords = "SC-ICS: Integrated Chemical Sensors, Silicon, Actuators, Energy consumption, Chemical sensors, Electric resistance, Temperature sensors, Thermal resistance, Electrodes, Monitoring, Gas detectors",

author = "A.Y. Kovalgin and J. Holleman and G. Iordache",

year = "2006",

month = oct,

day = "31",

doi = "10.1109/ICSENS.2005.1597927",

language = "English",

isbn = "0-7803-9056-3",

pages = "1225--1228",

booktitle = "Proceedings of the IEEE Sensors Conference 2005",

publisher = "IEEE",

address = "United States",

note = "2005 IEEE Sensors Conference ; Conference date: 31-10-2005 Through 03-11-2005",

url = "http://ewh.ieee.org/conf/sensors2005/",

}

TY - GEN

T1 - A Versatile Micro-Scale Silicon Sensor/Actuator with Low Power Consumption

AU - Kovalgin, A.Y.

AU - Holleman, J.

AU - Iordache, G.

PY - 2006/10/31

Y1 - 2006/10/31

N2 - We designed a CMOS compatible hot-surface silicon device operating at a power down to sub-μW. It has a pillarshaped structure with a nano-size (10-100 nm) conductive link between the electrodes separated by a SiO2 layer. The device is capable of maintaining a μm-size hot-surface area of several hundred degrees centigrade due to non-radiative recombination of carriers in a thin (13 nm) poly silicon surface layer. Such a device can be used as a light source, a heat source, as well as a sensitive detector of light and heat. As a direct application, we demonstrate the feasibility to perform as an adsorption-desorption sensor, and as a unit for activating chemisorption/decomposition (i.e. micro-reactor).

AB - We designed a CMOS compatible hot-surface silicon device operating at a power down to sub-μW. It has a pillarshaped structure with a nano-size (10-100 nm) conductive link between the electrodes separated by a SiO2 layer. The device is capable of maintaining a μm-size hot-surface area of several hundred degrees centigrade due to non-radiative recombination of carriers in a thin (13 nm) poly silicon surface layer. Such a device can be used as a light source, a heat source, as well as a sensitive detector of light and heat. As a direct application, we demonstrate the feasibility to perform as an adsorption-desorption sensor, and as a unit for activating chemisorption/decomposition (i.e. micro-reactor).

KW - SC-ICS: Integrated Chemical Sensors

KW - Silicon

KW - Actuators

KW - Energy consumption

KW - Chemical sensors

KW - Electric resistance

KW - Temperature sensors

KW - Thermal resistance

KW - Electrodes

KW - Monitoring

KW - Gas detectors

U2 - 10.1109/ICSENS.2005.1597927

DO - 10.1109/ICSENS.2005.1597927

M3 - Conference contribution

SN - 0-7803-9056-3

SP - 1225

EP - 1228

BT - Proceedings of the IEEE Sensors Conference 2005

PB - IEEE

CY - Piscataway, NJ, USA

T2 - 2005 IEEE Sensors Conference

Y2 - 31 October 2005 through 3 November 2005

ER -

A Versatile Micro-Scale Silicon Sensor/Actuator with Low Power Consumption

Abstract

Conference

Keywords

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