A vertically integrated dynamic RAM-cell: Buried bit line memory cell with floating transfer layer

A.J. Mouthaan, Maarten Vertregt

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    Abstract

    A charge injection device has been realized in which charge can be injected on to an MOS-capacitor from a buried layer via an isolated transfer layer. The cell is positioned vertically between word and bit line. LOCOS (local oxidation) is used to isolate the cells and (deep) ion implantation to realize the buried bit line and transfer layer. This isolation prevents carriers from diffusing to neighbouring cells and hence preserves stored information. The device physics has been analysed using simulation programs and bipolar modelling. It is shown that this device can be used as a dynamic RAM-cell of extreme simplicity and potentially small cell size compared to conventional DRAM cells.
    Original languageUndefined
    Pages (from-to)1289-1294
    JournalSolid-state electronics
    Volume29
    Issue number12
    DOIs
    Publication statusPublished - 1986

    Keywords

    • IR-69595

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