A wideband IM3 cancellation technique for CMOS attenuators

W. Cheng; M.S. Oude Alink; Anne J. Annema; Gerhardus J.M. Wienk; Bram Nauta

doi:10.1109/ISSCC.2012.6176937

A wideband IM3 cancellation technique for CMOS attenuators

W. Cheng, M.S. Oude Alink, Anne J. Annema, Gerhardus J.M. Wienk, Bram Nauta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

263 Downloads (Pure)

Abstract

A highly linear P attenuator system using a wideband IM3 cancellation technique is presented that provides 4 discrete attenuation levels with 6dB spacing for DC-5GHz. For the whole band, S11<-14dB, attenuation flatness<1.6dB, +10dBm input P1dB and +26dBm IIP3 are achieved. For the TV band (0.1Gz-1.2GHz) +30dBm IIP3 is achieved. The active area is 0.0054mm2 in a standard 0.16um bulk CMOS process.

Original language	English
Title of host publication	IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC 2012)
Place of Publication	Piscataway
Publisher	IEEE
Pages	78-80
Number of pages	3
ISBN (Print)	978-1-4673-0376-7
DOIs	https://doi.org/10.1109/ISSCC.2012.6176937
Publication status	Published - 20 Feb 2012
Event	IEEE International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, United States Duration: 19 Feb 2012 → 23 Feb 2012

Publication series

Name
Publisher	IEEE Press
ISSN (Print)	0193-6530

Conference

Conference	IEEE International Solid-State Circuits Conference, ISSCC 2012
Abbreviated title	ISSCC
Country/Territory	United States
City	San Francisco
Period	19/02/12 → 23/02/12

Keywords

METIS-286275
Frequency measurement
Attenuators
Attenuation
EWI-21049
IR-80261
Radio frequency
Nonlinear distortion
Transistors
CMOS integrated circuits

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10.1109/ISSCC.2012.6176937

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@inproceedings{5235e24b2f26414f9a59b8f285d575e6,

title = "A wideband IM3 cancellation technique for CMOS attenuators",

abstract = "A highly linear P attenuator system using a wideband IM3 cancellation technique is presented that provides 4 discrete attenuation levels with 6dB spacing for DC-5GHz. For the whole band, S11<-14dB, attenuation flatness<1.6dB, +10dBm input P1dB and +26dBm IIP3 are achieved. For the TV band (0.1Gz-1.2GHz) +30dBm IIP3 is achieved. The active area is 0.0054mm2 in a standard 0.16um bulk CMOS process.",

keywords = "METIS-286275, Frequency measurement, Attenuators, Attenuation, EWI-21049, IR-80261, Radio frequency, Nonlinear distortion, Transistors, CMOS integrated circuits",

author = "W. Cheng and {Oude Alink}, M.S. and Annema, {Anne J.} and Wienk, {Gerhardus J.M.} and Bram Nauta",

note = "10.1109/ISSCC.2012.6176937 ; IEEE International Solid-State Circuits Conference, ISSCC 2012, ISSCC ; Conference date: 19-02-2012 Through 23-02-2012",

year = "2012",

month = feb,

day = "20",

doi = "10.1109/ISSCC.2012.6176937",

language = "English",

isbn = "978-1-4673-0376-7",

publisher = "IEEE",

pages = "78--80",

booktitle = "IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC 2012)",

}

Cheng, W, Oude Alink, MS , Annema, AJ, Wienk, GJM & Nauta, B 2012, A wideband IM3 cancellation technique for CMOS attenuators. in IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC 2012). IEEE, Piscataway, pp. 78-80, IEEE International Solid-State Circuits Conference, ISSCC 2012, San Francisco, California, United States, 19/02/12. https://doi.org/10.1109/ISSCC.2012.6176937

TY - GEN

T1 - A wideband IM3 cancellation technique for CMOS attenuators

AU - Cheng, W.

AU - Oude Alink, M.S.

AU - Annema, Anne J.

AU - Wienk, Gerhardus J.M.

AU - Nauta, Bram

N1 - 10.1109/ISSCC.2012.6176937

PY - 2012/2/20

Y1 - 2012/2/20

N2 - A highly linear P attenuator system using a wideband IM3 cancellation technique is presented that provides 4 discrete attenuation levels with 6dB spacing for DC-5GHz. For the whole band, S11<-14dB, attenuation flatness<1.6dB, +10dBm input P1dB and +26dBm IIP3 are achieved. For the TV band (0.1Gz-1.2GHz) +30dBm IIP3 is achieved. The active area is 0.0054mm2 in a standard 0.16um bulk CMOS process.

AB - A highly linear P attenuator system using a wideband IM3 cancellation technique is presented that provides 4 discrete attenuation levels with 6dB spacing for DC-5GHz. For the whole band, S11<-14dB, attenuation flatness<1.6dB, +10dBm input P1dB and +26dBm IIP3 are achieved. For the TV band (0.1Gz-1.2GHz) +30dBm IIP3 is achieved. The active area is 0.0054mm2 in a standard 0.16um bulk CMOS process.

KW - METIS-286275

KW - Frequency measurement

KW - Attenuators

KW - Attenuation

KW - EWI-21049

KW - IR-80261

KW - Radio frequency

KW - Nonlinear distortion

KW - Transistors

KW - CMOS integrated circuits

U2 - 10.1109/ISSCC.2012.6176937

DO - 10.1109/ISSCC.2012.6176937

M3 - Conference contribution

SN - 978-1-4673-0376-7

SP - 78

EP - 80

BT - IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC 2012)

PB - IEEE

CY - Piscataway

T2 - IEEE International Solid-State Circuits Conference, ISSCC 2012

Y2 - 19 February 2012 through 23 February 2012

ER -

A wideband IM3 cancellation technique for CMOS attenuators

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Keywords

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