A wideband IM3 cancellation technique for CMOS II- and T-attenuators

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    Abstract

    A wideband IM3 cancellation technique for CMOS attenuators is presented. With proper transistor width ratios, the dominant distortion currents of transistor switches cancel each other. As a result, a high IIP3 robust to PVT variations can be achieved without using large transistors. Two prototypes in a 0.16 μm standard bulk CMOS process are presented: a -attenuator with four discrete settings obtains +26 dBm IIP3 and +3 dBm 1 dB-compression point (CP) for 50 MHz to 5 GHz with only 0.0054 mm active area, and a similar T-attenuator system which obtains +27 dBm IIP3 and +13 dBm CP for 50 MHz to 5.6 GHz with only 0.0067 mm active area.
    Original languageEnglish
    Pages (from-to)358-368
    Number of pages11
    JournalIEEE journal of solid-state circuits
    Volume48
    Issue number2
    DOIs
    Publication statusPublished - 1 May 2013

    Keywords

    • IM3 cancellation
    • IR-86269
    • CMOS
    • Attenuator
    • EWI-22558
    • Intermodulation distortion
    • Linearity
    • METIS-297591

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