Above-CMOS a-Si and CIGS Solar Cells for Powering Autonomous Microsystems

J. Lu; W. Liu; C.H.M. van der Werf; A.Y. Kovalgin; Y. Sun; R.E.I. Schropp; J. Schmitz

doi:10.1109/IEDM.2010.5703457

Above-CMOS a-Si and CIGS Solar Cells for Powering Autonomous Microsystems

J. Lu, W. Liu, C.H.M. van der Werf, A.Y. Kovalgin, Y. Sun, R.E.I. Schropp, J. Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

9 Citations (Scopus)

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Abstract

Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2%, copperindium-gallium-selenide (CIGS) cells 7.1%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal ion contamination, process temperature, and mechanical stress can be resolved while maintaining standard photovoltaic processing.

Original language	English
Title of host publication	Proceedings of the 2010 IEEE International Electron Devices Meeting (IEDM)
Publisher	IEEE Electron Devices Society
Pages	31.3.1.-31.3.4
Number of pages	4
ISBN (Print)	978-1-4424-7418-5
DOIs	https://doi.org/10.1109/IEDM.2010.5703457
Publication status	Published - 6 Dec 2010
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, United States Duration: 6 Dec 2010 → 8 Dec 2010

Publication series

Name
Publisher	IEEE Electron Devices Society
ISSN (Print)	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
Abbreviated title	IEDM
Country/Territory	United States
City	San Francisco
Period	6/12/10 → 8/12/10

Keywords

METIS-279124
EWI-19039
IR-75943

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10.1109/IEDM.2010.5703457

lu_iedm

Cite this

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title = "Above-CMOS a-Si and CIGS Solar Cells for Powering Autonomous Microsystems",

abstract = "Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2%, copperindium-gallium-selenide (CIGS) cells 7.1%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal ion contamination, process temperature, and mechanical stress can be resolved while maintaining standard photovoltaic processing.",

keywords = "METIS-279124, EWI-19039, IR-75943",

author = "J. Lu and W. Liu and {van der Werf}, C.H.M. and A.Y. Kovalgin and Y. Sun and R.E.I. Schropp and J. Schmitz",

note = "10.1109/IEDM.2010.5703457 ; 2010 IEEE International Electron Devices Meeting, IEDM 2010, IEDM ; Conference date: 06-12-2010 Through 08-12-2010",

year = "2010",

month = dec,

day = "6",

doi = "10.1109/IEDM.2010.5703457",

language = "English",

isbn = "978-1-4424-7418-5",

publisher = "IEEE Electron Devices Society",

pages = "31.3.1.--31.3.4",

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address = "United States",

}

Lu, J, Liu, W, van der Werf, CHM, Kovalgin, AY, Sun, Y, Schropp, REI & Schmitz, J 2010, Above-CMOS a-Si and CIGS Solar Cells for Powering Autonomous Microsystems. in Proceedings of the 2010 IEEE International Electron Devices Meeting (IEDM). IEEE Electron Devices Society, pp. 31.3.1.-31.3.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, California, United States, 6/12/10. https://doi.org/10.1109/IEDM.2010.5703457

Above-CMOS a-Si and CIGS Solar Cells for Powering Autonomous Microsystems. / Lu, J.; Liu, W.; van der Werf, C.H.M. et al.

Proceedings of the 2010 IEEE International Electron Devices Meeting (IEDM). IEEE Electron Devices Society, 2010. p. 31.3.1.-31.3.4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Above-CMOS a-Si and CIGS Solar Cells for Powering Autonomous Microsystems

AU - Lu, J.

AU - Liu, W.

AU - van der Werf, C.H.M.

AU - Kovalgin, A.Y.

AU - Sun, Y.

AU - Schropp, R.E.I.

AU - Schmitz, J.

N1 - 10.1109/IEDM.2010.5703457

PY - 2010/12/6

Y1 - 2010/12/6

N2 - Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2%, copperindium-gallium-selenide (CIGS) cells 7.1%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal ion contamination, process temperature, and mechanical stress can be resolved while maintaining standard photovoltaic processing.

AB - Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2%, copperindium-gallium-selenide (CIGS) cells 7.1%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal ion contamination, process temperature, and mechanical stress can be resolved while maintaining standard photovoltaic processing.

KW - METIS-279124

KW - EWI-19039

KW - IR-75943

U2 - 10.1109/IEDM.2010.5703457

DO - 10.1109/IEDM.2010.5703457

M3 - Conference contribution

SN - 978-1-4424-7418-5

SP - 31.3.1.-31.3.4

BT - Proceedings of the 2010 IEEE International Electron Devices Meeting (IEDM)

PB - IEEE Electron Devices Society

T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010

Y2 - 6 December 2010 through 8 December 2010

ER -

Above-CMOS a-Si and CIGS Solar Cells for Powering Autonomous Microsystems

Abstract

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Keywords

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