Accurate SIMS doping profiling of aluminum-doped solid-phase epitaxy silicon islands

Yann Civale*, Lis K. Nanver, Stefano G. Alberici, Andrew Gammon, Ian Kelly

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)


A procedure has been implemented for a quantitative aluminum-doping profiling of μm- scale aluminum-induced solid-phase-epitaxy (SPE) Si islands formed at 400°C. The aluminum concentration was measured to be 1-2× 1019 cm-3, which is about 10 times higher than previously reported electrical activation levels. The elemental concentration was measured by secondary-ion-mass-spectroscopy (SIMS) on arrays of SPE Si islands grown by a recently developed process that allows control of the island geometry.

Original languageEnglish
Pages (from-to)H74-H76
JournalElectrochemical and solid-state letters
Issue number4
Publication statusPublished - 22 Feb 2008
Externally publishedYes


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