Abstract
A procedure has been implemented for a quantitative aluminum-doping profiling of μm- scale aluminum-induced solid-phase-epitaxy (SPE) Si islands formed at 400°C. The aluminum concentration was measured to be 1-2× 1019 cm-3, which is about 10 times higher than previously reported electrical activation levels. The elemental concentration was measured by secondary-ion-mass-spectroscopy (SIMS) on arrays of SPE Si islands grown by a recently developed process that allows control of the island geometry.
Original language | English |
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Pages (from-to) | H74-H76 |
Journal | Electrochemical and solid-state letters |
Volume | 11 |
Issue number | 4 |
DOIs | |
Publication status | Published - 22 Feb 2008 |
Externally published | Yes |