Accurate SIMS doping profiling of aluminum-doped solid-phase epitaxy silicon islands

Yann Civale; Lis K. Nanver; Stefano G. Alberici; Andrew Gammon; Ian Kelly

doi:10.1149/1.2836739

Accurate SIMS doping profiling of aluminum-doped solid-phase epitaxy silicon islands

Yann Civale^*, Lis K. Nanver, Stefano G. Alberici, Andrew Gammon, Ian Kelly

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

6 Citations (Scopus)

Abstract

A procedure has been implemented for a quantitative aluminum-doping profiling of μm- scale aluminum-induced solid-phase-epitaxy (SPE) Si islands formed at 400°C. The aluminum concentration was measured to be 1-2× 1019 cm-3, which is about 10 times higher than previously reported electrical activation levels. The elemental concentration was measured by secondary-ion-mass-spectroscopy (SIMS) on arrays of SPE Si islands grown by a recently developed process that allows control of the island geometry.

Original language	English
Pages (from-to)	H74-H76
Journal	Electrochemical and solid-state letters
Volume	11
Issue number	4
DOIs	https://doi.org/10.1149/1.2836739
Publication status	Published - 22 Feb 2008
Externally published	Yes

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Civale, Y., Nanver, L. K., Alberici, S. G., Gammon, A., & Kelly, I. (2008). Accurate SIMS doping profiling of aluminum-doped solid-phase epitaxy silicon islands. Electrochemical and solid-state letters, 11(4), H74-H76. https://doi.org/10.1149/1.2836739

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AU - Kelly, Ian

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10.1149/1.2836739

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