Acoustic carrier transport in InP-based structures

Markus Beck, G. Yang, P.V. Santos, R. Nötzel

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We demonstrate the ambipolar acoustic transport of optically generated electrons and holes by surface acoustic waves in InGaAsP waveguide structures grown on InP substrates. Transport is detected by monitoring the photoluminescence in the 1400{1500-nm wavelength range emitted by the recombination of the acoustically transported carriers several hundreds of micrometers away from the photoexcitation spot.
Original languageEnglish
Pages (from-to)520-526
JournalChinese journal of physics
Issue number1: Special issue
Publication statusPublished - 2011


  • METIS-281978
  • IR-104393


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