Active Passive Monolithic Platforms in Si3N4 Technology

Research output: ThesisPhD Thesis - Research UT, graduation UTAcademic

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Abstract

Integrated photonic platforms such as the SOI platform, the InP platform and the Si3N4 platforms have their own advantages and limitations. To achieve more diverse functionalities on a photonic chip, the combination of different material platforms is extremely important. This is generally carried out by either hybrid integration, heterogeneous integration or monolithic integration. The goal of this thesis is to develop generic integrated platforms and building blocks that enable various active-passive photonic integrations based on the Si3N4 platform. Chapter 1 reviewed the challenges, integration schemes in photonic integrated circuits (PIC), and recent advances in the Si3N4 PICs. Benefiting from excellent optical features of the Si3N4, i.e., the low-loss and large transparency window (0.4–2.35 µm), in Chapter 2, we investigated passive building blocks with optical designs, providing favorable performance of individual components in the Si3N4 platform. Then in Chapter 3, we demonstrated the hybrid integration and monolithic integration between the Si3N4 and polymer material with high-performance optical couplings. In order to realize the active-passive integration in the Si3N4 platform, in Chapter 4, we developed a double-layer photonic platform with standardized processes and good overlay by monolithic integration between the Si3N4 and rare-earth-ion doped Al2O3 material, showing great potentials of scalable and tolerant integrations of active functionalities in the Si3N4 platform. Chapter 5 demonstrated the first application of the double-layer platform, i.e., the integrated Al2O3:Er3+-Si3N4 amplifiers. A novel gain characterization methodology is introduced and high optical gain (~18 dB) has been achieved. Overall, the work in this thesis provides advances in understanding the characteristics of different integration platforms, especially in the development of the double-layer platforms for the active-passive integration of the Si3N4 and rare-earth-ion doped Al2O3, and the integrated Al2O3:Er3+-Si3N4 amplifiers. The investigations pave the way of various applications based on active-passive integration of the Si3N4 and rare-earth-ion based materials.
Original languageEnglish
QualificationDoctor of Philosophy
Awarding Institution
  • University of Twente
Supervisors/Advisors
  • García Blanco, Sonia, Supervisor
Award date7 Jun 2019
Place of PublicationEnschede
Publisher
Print ISBNs978-90-365-4782-6
Electronic ISBNs978-90-365-4782-6
DOIs
Publication statusPublished - 7 Jun 2019

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Photonics
Rare earths
Ions
Optical gain
Optical design
Transparency
Integrated circuits
Polymers

Keywords

  • Active
  • Passive
  • integrated photonics
  • Amplifiers
  • Silicon nitride (Si3N4)
  • Aluminium oxide
  • Monolithic integration
  • Coupling
  • Double layer

Cite this

Mu, Jinfeng . / Active Passive Monolithic Platforms in Si3N4 Technology. Enschede : University of Twente, 2019. 168 p.
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title = "Active Passive Monolithic Platforms in Si3N4 Technology",
abstract = "Integrated photonic platforms such as the SOI platform, the InP platform and the Si3N4 platforms have their own advantages and limitations. To achieve more diverse functionalities on a photonic chip, the combination of different material platforms is extremely important. This is generally carried out by either hybrid integration, heterogeneous integration or monolithic integration. The goal of this thesis is to develop generic integrated platforms and building blocks that enable various active-passive photonic integrations based on the Si3N4 platform. Chapter 1 reviewed the challenges, integration schemes in photonic integrated circuits (PIC), and recent advances in the Si3N4 PICs. Benefiting from excellent optical features of the Si3N4, i.e., the low-loss and large transparency window (0.4–2.35 µm), in Chapter 2, we investigated passive building blocks with optical designs, providing favorable performance of individual components in the Si3N4 platform. Then in Chapter 3, we demonstrated the hybrid integration and monolithic integration between the Si3N4 and polymer material with high-performance optical couplings. In order to realize the active-passive integration in the Si3N4 platform, in Chapter 4, we developed a double-layer photonic platform with standardized processes and good overlay by monolithic integration between the Si3N4 and rare-earth-ion doped Al2O3 material, showing great potentials of scalable and tolerant integrations of active functionalities in the Si3N4 platform. Chapter 5 demonstrated the first application of the double-layer platform, i.e., the integrated Al2O3:Er3+-Si3N4 amplifiers. A novel gain characterization methodology is introduced and high optical gain (~18 dB) has been achieved. Overall, the work in this thesis provides advances in understanding the characteristics of different integration platforms, especially in the development of the double-layer platforms for the active-passive integration of the Si3N4 and rare-earth-ion doped Al2O3, and the integrated Al2O3:Er3+-Si3N4 amplifiers. The investigations pave the way of various applications based on active-passive integration of the Si3N4 and rare-earth-ion based materials.",
keywords = "Active, Passive, integrated photonics, Amplifiers, Silicon nitride (Si3N4), Aluminium oxide, Monolithic integration, Coupling, Double layer",
author = "Jinfeng Mu",
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Active Passive Monolithic Platforms in Si3N4 Technology. / Mu, Jinfeng .

Enschede : University of Twente, 2019. 168 p.

Research output: ThesisPhD Thesis - Research UT, graduation UTAcademic

TY - THES

T1 - Active Passive Monolithic Platforms in Si3N4 Technology

AU - Mu, Jinfeng

N1 - Jinfeng Mu received the M.Sc. degree in Applied Physics at University of Twente in 2016. Currently, he works towards the PhD degree in Optical Sciences group at University of Twente. His research interests include hybrid and monolithic integration technologies in integrated photonics, for active-passive devices such as laser and amplifiers, the development of fabrication processes, and applications for telecommunication and optical sensing.

PY - 2019/6/7

Y1 - 2019/6/7

N2 - Integrated photonic platforms such as the SOI platform, the InP platform and the Si3N4 platforms have their own advantages and limitations. To achieve more diverse functionalities on a photonic chip, the combination of different material platforms is extremely important. This is generally carried out by either hybrid integration, heterogeneous integration or monolithic integration. The goal of this thesis is to develop generic integrated platforms and building blocks that enable various active-passive photonic integrations based on the Si3N4 platform. Chapter 1 reviewed the challenges, integration schemes in photonic integrated circuits (PIC), and recent advances in the Si3N4 PICs. Benefiting from excellent optical features of the Si3N4, i.e., the low-loss and large transparency window (0.4–2.35 µm), in Chapter 2, we investigated passive building blocks with optical designs, providing favorable performance of individual components in the Si3N4 platform. Then in Chapter 3, we demonstrated the hybrid integration and monolithic integration between the Si3N4 and polymer material with high-performance optical couplings. In order to realize the active-passive integration in the Si3N4 platform, in Chapter 4, we developed a double-layer photonic platform with standardized processes and good overlay by monolithic integration between the Si3N4 and rare-earth-ion doped Al2O3 material, showing great potentials of scalable and tolerant integrations of active functionalities in the Si3N4 platform. Chapter 5 demonstrated the first application of the double-layer platform, i.e., the integrated Al2O3:Er3+-Si3N4 amplifiers. A novel gain characterization methodology is introduced and high optical gain (~18 dB) has been achieved. Overall, the work in this thesis provides advances in understanding the characteristics of different integration platforms, especially in the development of the double-layer platforms for the active-passive integration of the Si3N4 and rare-earth-ion doped Al2O3, and the integrated Al2O3:Er3+-Si3N4 amplifiers. The investigations pave the way of various applications based on active-passive integration of the Si3N4 and rare-earth-ion based materials.

AB - Integrated photonic platforms such as the SOI platform, the InP platform and the Si3N4 platforms have their own advantages and limitations. To achieve more diverse functionalities on a photonic chip, the combination of different material platforms is extremely important. This is generally carried out by either hybrid integration, heterogeneous integration or monolithic integration. The goal of this thesis is to develop generic integrated platforms and building blocks that enable various active-passive photonic integrations based on the Si3N4 platform. Chapter 1 reviewed the challenges, integration schemes in photonic integrated circuits (PIC), and recent advances in the Si3N4 PICs. Benefiting from excellent optical features of the Si3N4, i.e., the low-loss and large transparency window (0.4–2.35 µm), in Chapter 2, we investigated passive building blocks with optical designs, providing favorable performance of individual components in the Si3N4 platform. Then in Chapter 3, we demonstrated the hybrid integration and monolithic integration between the Si3N4 and polymer material with high-performance optical couplings. In order to realize the active-passive integration in the Si3N4 platform, in Chapter 4, we developed a double-layer photonic platform with standardized processes and good overlay by monolithic integration between the Si3N4 and rare-earth-ion doped Al2O3 material, showing great potentials of scalable and tolerant integrations of active functionalities in the Si3N4 platform. Chapter 5 demonstrated the first application of the double-layer platform, i.e., the integrated Al2O3:Er3+-Si3N4 amplifiers. A novel gain characterization methodology is introduced and high optical gain (~18 dB) has been achieved. Overall, the work in this thesis provides advances in understanding the characteristics of different integration platforms, especially in the development of the double-layer platforms for the active-passive integration of the Si3N4 and rare-earth-ion doped Al2O3, and the integrated Al2O3:Er3+-Si3N4 amplifiers. The investigations pave the way of various applications based on active-passive integration of the Si3N4 and rare-earth-ion based materials.

KW - Active

KW - Passive

KW - integrated photonics

KW - Amplifiers

KW - Silicon nitride (Si3N4)

KW - Aluminium oxide

KW - Monolithic integration

KW - Coupling

KW - Double layer

U2 - 10.3990/1.9789036547826

DO - 10.3990/1.9789036547826

M3 - PhD Thesis - Research UT, graduation UT

SN - 978-90-365-4782-6

PB - University of Twente

CY - Enschede

ER -