Abstract
In this work we propose a novel feature for the transistor: a piezo-electric layer for strain modulation of the channel. The strain is formed at strong inversion only, to obtain a lower threshold voltage, but will be absent in the off-state to preserve the unstrained leakage current. Our results, obtained by combining electrical and mechanical finite element method simulation, demonstrate a seven mV/dec steeper subthreshold swing for a classical SOI transistor and ten mV/dec improvement for a silicon tunnel field effect transistor.
| Original language | Undefined |
|---|---|
| Title of host publication | Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European |
| Place of Publication | USA |
| Publisher | IEEE Solid-State Circuits Society |
| Pages | 125-128 |
| Number of pages | 4 |
| ISBN (Print) | 978-1-4673-1706-1 |
| DOIs | |
| Publication status | Published - 17 Sep 2012 |
| Event | 42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France Duration: 17 Sep 2012 → 21 Sep 2012 Conference number: 42 |
Publication series
| Name | |
|---|---|
| Publisher | IEEE Solid-State Circuits Society |
| ISSN (Print) | 1930-8876 |
Conference
| Conference | 42nd European Solid-State Device Research Conference, ESSDERC 2012 |
|---|---|
| Abbreviated title | ESSDERC |
| Country | France |
| City | Bordeaux |
| Period | 17/09/12 → 21/09/12 |
Keywords
- EWI-23032
- METIS-296282
- IR-84100
Cite this
van Hemert, T., & Hueting, R. J. E. (2012). Active strain modulation in field effect devices. In Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European (pp. 125-128). USA: IEEE Solid-State Circuits Society. https://doi.org/10.1109/ESSDERC.2012.6343349