Abstract
| Original language | Undefined |
|---|---|
| Title of host publication | Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European |
| Place of Publication | USA |
| Publisher | IEEE Solid-State Circuits Society |
| Pages | 125-128 |
| Number of pages | 4 |
| ISBN (Print) | 978-1-4673-1706-1 |
| DOIs | |
| Publication status | Published - 17 Sep 2012 |
| Event | 42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France Duration: 17 Sep 2012 → 21 Sep 2012 Conference number: 42 |
Publication series
| Name | |
|---|---|
| Publisher | IEEE Solid-State Circuits Society |
| ISSN (Print) | 1930-8876 |
Conference
| Conference | 42nd European Solid-State Device Research Conference, ESSDERC 2012 |
|---|---|
| Abbreviated title | ESSDERC |
| Country | France |
| City | Bordeaux |
| Period | 17/09/12 → 21/09/12 |
Keywords
- EWI-23032
- METIS-296282
- IR-84100
Cite this
}
Active strain modulation in field effect devices. / van Hemert, T.; Hueting, Raymond Josephus Engelbart.
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European. USA : IEEE Solid-State Circuits Society, 2012. p. 125-128.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Active strain modulation in field effect devices
AU - van Hemert, T.
AU - Hueting, Raymond Josephus Engelbart
N1 - 10.1109/ESSDERC.2012.6343349
PY - 2012/9/17
Y1 - 2012/9/17
N2 - In this work we propose a novel feature for the transistor: a piezo-electric layer for strain modulation of the channel. The strain is formed at strong inversion only, to obtain a lower threshold voltage, but will be absent in the off-state to preserve the unstrained leakage current. Our results, obtained by combining electrical and mechanical finite element method simulation, demonstrate a seven mV/dec steeper subthreshold swing for a classical SOI transistor and ten mV/dec improvement for a silicon tunnel field effect transistor.
AB - In this work we propose a novel feature for the transistor: a piezo-electric layer for strain modulation of the channel. The strain is formed at strong inversion only, to obtain a lower threshold voltage, but will be absent in the off-state to preserve the unstrained leakage current. Our results, obtained by combining electrical and mechanical finite element method simulation, demonstrate a seven mV/dec steeper subthreshold swing for a classical SOI transistor and ten mV/dec improvement for a silicon tunnel field effect transistor.
KW - EWI-23032
KW - METIS-296282
KW - IR-84100
U2 - 10.1109/ESSDERC.2012.6343349
DO - 10.1109/ESSDERC.2012.6343349
M3 - Conference contribution
SN - 978-1-4673-1706-1
SP - 125
EP - 128
BT - Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
PB - IEEE Solid-State Circuits Society
CY - USA
ER -