Active strain modulation in field effect devices

T. van Hemert; Raymond Josephus Engelbart Hueting

doi:10.1109/ESSDERC.2012.6343349

Active strain modulation in field effect devices

T. van Hemert, Raymond Josephus Engelbart Hueting

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

8 Citations (Scopus)

Abstract

In this work we propose a novel feature for the transistor: a piezo-electric layer for strain modulation of the channel. The strain is formed at strong inversion only, to obtain a lower threshold voltage, but will be absent in the off-state to preserve the unstrained leakage current. Our results, obtained by combining electrical and mechanical finite element method simulation, demonstrate a seven mV/dec steeper subthreshold swing for a classical SOI transistor and ten mV/dec improvement for a silicon tunnel field effect transistor.

Original language	Undefined
Title of host publication	Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Place of Publication	USA
Publisher	IEEE Solid-State Circuits Society
Pages	125-128
Number of pages	4
ISBN (Print)	978-1-4673-1706-1
DOIs	https://doi.org/10.1109/ESSDERC.2012.6343349
Publication status	Published - 17 Sep 2012
Event	42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France Duration: 17 Sep 2012 → 21 Sep 2012 Conference number: 42

Publication series

Name
Publisher	IEEE Solid-State Circuits Society
ISSN (Print)	1930-8876

Conference

Conference	42nd European Solid-State Device Research Conference, ESSDERC 2012
Abbreviated title	ESSDERC
Country/Territory	France
City	Bordeaux
Period	17/09/12 → 21/09/12

Keywords

EWI-23032
METIS-296282
IR-84100

Access to Document

10.1109/ESSDERC.2012.6343349

http://eprints.eemcs.utwente.nl/secure2/23032/01/Van_Hemert.pdf

Cite this

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title = "Active strain modulation in field effect devices",

abstract = "In this work we propose a novel feature for the transistor: a piezo-electric layer for strain modulation of the channel. The strain is formed at strong inversion only, to obtain a lower threshold voltage, but will be absent in the off-state to preserve the unstrained leakage current. Our results, obtained by combining electrical and mechanical finite element method simulation, demonstrate a seven mV/dec steeper subthreshold swing for a classical SOI transistor and ten mV/dec improvement for a silicon tunnel field effect transistor.",

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AU - Hueting, Raymond Josephus Engelbart

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N2 - In this work we propose a novel feature for the transistor: a piezo-electric layer for strain modulation of the channel. The strain is formed at strong inversion only, to obtain a lower threshold voltage, but will be absent in the off-state to preserve the unstrained leakage current. Our results, obtained by combining electrical and mechanical finite element method simulation, demonstrate a seven mV/dec steeper subthreshold swing for a classical SOI transistor and ten mV/dec improvement for a silicon tunnel field effect transistor.

AB - In this work we propose a novel feature for the transistor: a piezo-electric layer for strain modulation of the channel. The strain is formed at strong inversion only, to obtain a lower threshold voltage, but will be absent in the off-state to preserve the unstrained leakage current. Our results, obtained by combining electrical and mechanical finite element method simulation, demonstrate a seven mV/dec steeper subthreshold swing for a classical SOI transistor and ten mV/dec improvement for a silicon tunnel field effect transistor.

KW - EWI-23032

KW - METIS-296282

KW - IR-84100

U2 - 10.1109/ESSDERC.2012.6343349

DO - 10.1109/ESSDERC.2012.6343349

M3 - Conference contribution

SN - 978-1-4673-1706-1

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BT - Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European

PB - IEEE Solid-State Circuits Society

CY - USA

Y2 - 17 September 2012 through 21 September 2012

ER -