Active strain modulation in field effect devices

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

7 Citations (Scopus)

Abstract

In this work we propose a novel feature for the transistor: a piezo-electric layer for strain modulation of the channel. The strain is formed at strong inversion only, to obtain a lower threshold voltage, but will be absent in the off-state to preserve the unstrained leakage current. Our results, obtained by combining electrical and mechanical finite element method simulation, demonstrate a seven mV/dec steeper subthreshold swing for a classical SOI transistor and ten mV/dec improvement for a silicon tunnel field effect transistor.
Original languageUndefined
Title of host publicationSolid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Place of PublicationUSA
PublisherIEEE Solid-State Circuits Society
Pages125-128
Number of pages4
ISBN (Print)978-1-4673-1706-1
DOIs
Publication statusPublished - 17 Sep 2012
Event42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France
Duration: 17 Sep 201221 Sep 2012
Conference number: 42

Publication series

Name
PublisherIEEE Solid-State Circuits Society
ISSN (Print)1930-8876

Conference

Conference42nd European Solid-State Device Research Conference, ESSDERC 2012
Abbreviated titleESSDERC
CountryFrance
CityBordeaux
Period17/09/1221/09/12

Keywords

  • EWI-23032
  • METIS-296282
  • IR-84100

Cite this

van Hemert, T., & Hueting, R. J. E. (2012). Active strain modulation in field effect devices. In Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European (pp. 125-128). USA: IEEE Solid-State Circuits Society. https://doi.org/10.1109/ESSDERC.2012.6343349
van Hemert, T. ; Hueting, Raymond Josephus Engelbart. / Active strain modulation in field effect devices. Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European. USA : IEEE Solid-State Circuits Society, 2012. pp. 125-128
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van Hemert, T & Hueting, RJE 2012, Active strain modulation in field effect devices. in Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European. IEEE Solid-State Circuits Society, USA, pp. 125-128, 42nd European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, 17/09/12. https://doi.org/10.1109/ESSDERC.2012.6343349

Active strain modulation in field effect devices. / van Hemert, T.; Hueting, Raymond Josephus Engelbart.

Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European. USA : IEEE Solid-State Circuits Society, 2012. p. 125-128.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Active strain modulation in field effect devices

AU - van Hemert, T.

AU - Hueting, Raymond Josephus Engelbart

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N2 - In this work we propose a novel feature for the transistor: a piezo-electric layer for strain modulation of the channel. The strain is formed at strong inversion only, to obtain a lower threshold voltage, but will be absent in the off-state to preserve the unstrained leakage current. Our results, obtained by combining electrical and mechanical finite element method simulation, demonstrate a seven mV/dec steeper subthreshold swing for a classical SOI transistor and ten mV/dec improvement for a silicon tunnel field effect transistor.

AB - In this work we propose a novel feature for the transistor: a piezo-electric layer for strain modulation of the channel. The strain is formed at strong inversion only, to obtain a lower threshold voltage, but will be absent in the off-state to preserve the unstrained leakage current. Our results, obtained by combining electrical and mechanical finite element method simulation, demonstrate a seven mV/dec steeper subthreshold swing for a classical SOI transistor and ten mV/dec improvement for a silicon tunnel field effect transistor.

KW - EWI-23032

KW - METIS-296282

KW - IR-84100

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van Hemert T, Hueting RJE. Active strain modulation in field effect devices. In Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European. USA: IEEE Solid-State Circuits Society. 2012. p. 125-128 https://doi.org/10.1109/ESSDERC.2012.6343349