Active strain modulation in field effect devices

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    8 Citations (Scopus)

    Abstract

    In this work we propose a novel feature for the transistor: a piezo-electric layer for strain modulation of the channel. The strain is formed at strong inversion only, to obtain a lower threshold voltage, but will be absent in the off-state to preserve the unstrained leakage current. Our results, obtained by combining electrical and mechanical finite element method simulation, demonstrate a seven mV/dec steeper subthreshold swing for a classical SOI transistor and ten mV/dec improvement for a silicon tunnel field effect transistor.
    Original languageUndefined
    Title of host publicationSolid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
    Place of PublicationUSA
    PublisherIEEE Solid-State Circuits Society
    Pages125-128
    Number of pages4
    ISBN (Print)978-1-4673-1706-1
    DOIs
    Publication statusPublished - 17 Sep 2012
    Event42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France
    Duration: 17 Sep 201221 Sep 2012
    Conference number: 42

    Publication series

    Name
    PublisherIEEE Solid-State Circuits Society
    ISSN (Print)1930-8876

    Conference

    Conference42nd European Solid-State Device Research Conference, ESSDERC 2012
    Abbreviated titleESSDERC
    CountryFrance
    CityBordeaux
    Period17/09/1221/09/12

    Keywords

    • EWI-23032
    • METIS-296282
    • IR-84100

    Cite this

    van Hemert, T., & Hueting, R. J. E. (2012). Active strain modulation in field effect devices. In Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European (pp. 125-128). USA: IEEE Solid-State Circuits Society. https://doi.org/10.1109/ESSDERC.2012.6343349