Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks

W. C.Edmund Neo*, Yu Lin, Xiao Dong Liu, Leo C.N. De Vreede, Lawrence E. Larson, Marco Spirito, Marco J. Pelk, Koen Buisman, Atef Akhnoukh, Anton De Graauw, Lis K. Nanver

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

166 Citations (Scopus)


This paper presents a multi-band multi-mode class-AB power amplifier, which utilizes continuously tunable input and output matching networks integrated in a low-loss silicon-on-glass technology. The tunable matching networks make use of very high Q varactor diodes (Q > 100 @ 2 GHz) in a low distortion anti-series configuration to achieve the desired source and load impedance tunability. A QUBIC4G (SiGe, f t = 50 GHz) high voltage breakdown transistor (V CBO = 14 V, V CEO > 3.6 V) is used as active device. The realized adaptive amplifier provides 13 dB gain, 27-28 dBm output power at the 900, 1800, 1900 and 2100 MHz bands. For the communication bands above 1 GHz optimum load adaptation is facilitated resulting in efficiencies between 30%-55% over a 10 dB output power control range. The total chip area (including matching networks) of the amplifier is 8 mm 2..

Original languageEnglish
Article number1683908
Pages (from-to)2166-2176
Number of pages11
JournalIEEE journal of solid-state circuits
Issue number9
Publication statusPublished - 1 Sep 2006
Externally publishedYes


  • Adaptive matching network
  • Dynamic leadline
  • High efficiency
  • Multi-band
  • Multi-mode
  • Power amplifier
  • RF adaptivity


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