Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks

W. C.Edmund Neo, Yu Lin, Xiao Dong Liu, Leo C.N. De Vreede, Lawrence E. Larson, Marco Spirito, Marco J. Pelk, Koen Buisman, Atef Akhnoukh, Anton De Graauw, Lis K. Nanver

Research output: Contribution to journalArticleAcademicpeer-review

150 Citations (Scopus)

Abstract

This paper presents a multi-band multi-mode class-AB power amplifier, which utilizes continuously tunable input and output matching networks integrated in a low-loss silicon-on-glass technology. The tunable matching networks make use of very high Q varactor diodes (Q > 100 @ 2 GHz) in a low distortion anti-series configuration to achieve the desired source and load impedance tunability. A QUBIC4G (SiGe, f t = 50 GHz) high voltage breakdown transistor (V CBO = 14 V, V CEO > 3.6 V) is used as active device. The realized adaptive amplifier provides 13 dB gain, 27-28 dBm output power at the 900, 1800, 1900 and 2100 MHz bands. For the communication bands above 1 GHz optimum load adaptation is facilitated resulting in efficiencies between 30%-55% over a 10 dB output power control range. The total chip area (including matching networks) of the amplifier is 8 mm 2..

Original languageEnglish
Article number1683908
Pages (from-to)2166-2176
Number of pages11
JournalIEEE journal of solid-state circuits
Volume41
Issue number9
DOIs
Publication statusPublished - 1 Sep 2006
Externally publishedYes

Fingerprint

Varactors
Electric breakdown
Power amplifiers
Power control
Transistors
Diodes
Glass
Silicon
Communication

Keywords

  • Adaptive matching network
  • Dynamic leadline
  • High efficiency
  • Multi-band
  • Multi-mode
  • Power amplifier
  • RF adaptivity

Cite this

Neo, W. C.Edmund ; Lin, Yu ; Liu, Xiao Dong ; De Vreede, Leo C.N. ; Larson, Lawrence E. ; Spirito, Marco ; Pelk, Marco J. ; Buisman, Koen ; Akhnoukh, Atef ; De Graauw, Anton ; Nanver, Lis K. / Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks. In: IEEE journal of solid-state circuits. 2006 ; Vol. 41, No. 9. pp. 2166-2176.
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abstract = "This paper presents a multi-band multi-mode class-AB power amplifier, which utilizes continuously tunable input and output matching networks integrated in a low-loss silicon-on-glass technology. The tunable matching networks make use of very high Q varactor diodes (Q > 100 @ 2 GHz) in a low distortion anti-series configuration to achieve the desired source and load impedance tunability. A QUBIC4G (SiGe, f t = 50 GHz) high voltage breakdown transistor (V CBO = 14 V, V CEO > 3.6 V) is used as active device. The realized adaptive amplifier provides 13 dB gain, 27-28 dBm output power at the 900, 1800, 1900 and 2100 MHz bands. For the communication bands above 1 GHz optimum load adaptation is facilitated resulting in efficiencies between 30{\%}-55{\%} over a 10 dB output power control range. The total chip area (including matching networks) of the amplifier is 8 mm 2..",
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author = "Neo, {W. C.Edmund} and Yu Lin and Liu, {Xiao Dong} and {De Vreede}, {Leo C.N.} and Larson, {Lawrence E.} and Marco Spirito and Pelk, {Marco J.} and Koen Buisman and Atef Akhnoukh and {De Graauw}, Anton and Nanver, {Lis K.}",
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Neo, WCE, Lin, Y, Liu, XD, De Vreede, LCN, Larson, LE, Spirito, M, Pelk, MJ, Buisman, K, Akhnoukh, A, De Graauw, A & Nanver, LK 2006, 'Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks' IEEE journal of solid-state circuits, vol. 41, no. 9, 1683908, pp. 2166-2176. https://doi.org/10.1109/JSSC.2006.880586

Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks. / Neo, W. C.Edmund; Lin, Yu; Liu, Xiao Dong; De Vreede, Leo C.N.; Larson, Lawrence E.; Spirito, Marco; Pelk, Marco J.; Buisman, Koen; Akhnoukh, Atef; De Graauw, Anton; Nanver, Lis K.

In: IEEE journal of solid-state circuits, Vol. 41, No. 9, 1683908, 01.09.2006, p. 2166-2176.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Neo, W. C.Edmund

AU - Lin, Yu

AU - Liu, Xiao Dong

AU - De Vreede, Leo C.N.

AU - Larson, Lawrence E.

AU - Spirito, Marco

AU - Pelk, Marco J.

AU - Buisman, Koen

AU - Akhnoukh, Atef

AU - De Graauw, Anton

AU - Nanver, Lis K.

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N2 - This paper presents a multi-band multi-mode class-AB power amplifier, which utilizes continuously tunable input and output matching networks integrated in a low-loss silicon-on-glass technology. The tunable matching networks make use of very high Q varactor diodes (Q > 100 @ 2 GHz) in a low distortion anti-series configuration to achieve the desired source and load impedance tunability. A QUBIC4G (SiGe, f t = 50 GHz) high voltage breakdown transistor (V CBO = 14 V, V CEO > 3.6 V) is used as active device. The realized adaptive amplifier provides 13 dB gain, 27-28 dBm output power at the 900, 1800, 1900 and 2100 MHz bands. For the communication bands above 1 GHz optimum load adaptation is facilitated resulting in efficiencies between 30%-55% over a 10 dB output power control range. The total chip area (including matching networks) of the amplifier is 8 mm 2..

AB - This paper presents a multi-band multi-mode class-AB power amplifier, which utilizes continuously tunable input and output matching networks integrated in a low-loss silicon-on-glass technology. The tunable matching networks make use of very high Q varactor diodes (Q > 100 @ 2 GHz) in a low distortion anti-series configuration to achieve the desired source and load impedance tunability. A QUBIC4G (SiGe, f t = 50 GHz) high voltage breakdown transistor (V CBO = 14 V, V CEO > 3.6 V) is used as active device. The realized adaptive amplifier provides 13 dB gain, 27-28 dBm output power at the 900, 1800, 1900 and 2100 MHz bands. For the communication bands above 1 GHz optimum load adaptation is facilitated resulting in efficiencies between 30%-55% over a 10 dB output power control range. The total chip area (including matching networks) of the amplifier is 8 mm 2..

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