Abstract
This paper presents a multi-band multi-mode class-AB power amplifier, which utilizes continuously tunable input and output matching networks integrated in a low-loss silicon-on-glass technology. The tunable matching networks make use of very high Q varactor diodes (Q > 100 @ 2 GHz) in a low distortion anti-series configuration to achieve the desired source and load impedance tunability. A QUBIC4G (SiGe, f t = 50 GHz) high voltage breakdown transistor (V CBO = 14 V, V CEO > 3.6 V) is used as active device. The realized adaptive amplifier provides 13 dB gain, 27-28 dBm output power at the 900, 1800, 1900 and 2100 MHz bands. For the communication bands above 1 GHz optimum load adaptation is facilitated resulting in efficiencies between 30%-55% over a 10 dB output power control range. The total chip area (including matching networks) of the amplifier is 8 mm 2..
| Original language | English |
|---|---|
| Article number | 1683908 |
| Pages (from-to) | 2166-2176 |
| Number of pages | 11 |
| Journal | IEEE journal of solid-state circuits |
| Volume | 41 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1 Sep 2006 |
| Externally published | Yes |
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Keywords
- Adaptive matching network
- Dynamic leadline
- High efficiency
- Multi-band
- Multi-mode
- Power amplifier
- RF adaptivity
Cite this
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Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks. / Neo, W. C.Edmund; Lin, Yu; Liu, Xiao Dong; De Vreede, Leo C.N.; Larson, Lawrence E.; Spirito, Marco; Pelk, Marco J.; Buisman, Koen; Akhnoukh, Atef; De Graauw, Anton; Nanver, Lis K.
In: IEEE journal of solid-state circuits, Vol. 41, No. 9, 1683908, 01.09.2006, p. 2166-2176.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks
AU - Neo, W. C.Edmund
AU - Lin, Yu
AU - Liu, Xiao Dong
AU - De Vreede, Leo C.N.
AU - Larson, Lawrence E.
AU - Spirito, Marco
AU - Pelk, Marco J.
AU - Buisman, Koen
AU - Akhnoukh, Atef
AU - De Graauw, Anton
AU - Nanver, Lis K.
PY - 2006/9/1
Y1 - 2006/9/1
N2 - This paper presents a multi-band multi-mode class-AB power amplifier, which utilizes continuously tunable input and output matching networks integrated in a low-loss silicon-on-glass technology. The tunable matching networks make use of very high Q varactor diodes (Q > 100 @ 2 GHz) in a low distortion anti-series configuration to achieve the desired source and load impedance tunability. A QUBIC4G (SiGe, f t = 50 GHz) high voltage breakdown transistor (V CBO = 14 V, V CEO > 3.6 V) is used as active device. The realized adaptive amplifier provides 13 dB gain, 27-28 dBm output power at the 900, 1800, 1900 and 2100 MHz bands. For the communication bands above 1 GHz optimum load adaptation is facilitated resulting in efficiencies between 30%-55% over a 10 dB output power control range. The total chip area (including matching networks) of the amplifier is 8 mm 2..
AB - This paper presents a multi-band multi-mode class-AB power amplifier, which utilizes continuously tunable input and output matching networks integrated in a low-loss silicon-on-glass technology. The tunable matching networks make use of very high Q varactor diodes (Q > 100 @ 2 GHz) in a low distortion anti-series configuration to achieve the desired source and load impedance tunability. A QUBIC4G (SiGe, f t = 50 GHz) high voltage breakdown transistor (V CBO = 14 V, V CEO > 3.6 V) is used as active device. The realized adaptive amplifier provides 13 dB gain, 27-28 dBm output power at the 900, 1800, 1900 and 2100 MHz bands. For the communication bands above 1 GHz optimum load adaptation is facilitated resulting in efficiencies between 30%-55% over a 10 dB output power control range. The total chip area (including matching networks) of the amplifier is 8 mm 2..
KW - Adaptive matching network
KW - Dynamic leadline
KW - High efficiency
KW - Multi-band
KW - Multi-mode
KW - Power amplifier
KW - RF adaptivity
UR - http://www.scopus.com/inward/record.url?scp=33748374928&partnerID=8YFLogxK
U2 - 10.1109/JSSC.2006.880586
DO - 10.1109/JSSC.2006.880586
M3 - Article
VL - 41
SP - 2166
EP - 2176
JO - IEEE journal of solid-state circuits
JF - IEEE journal of solid-state circuits
SN - 0018-9200
IS - 9
M1 - 1683908
ER -