Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks

W. C.Edmund Neo; Yu Lin; Xiao Dong Liu; Leo C.N. De Vreede; Lawrence E. Larson; Marco Spirito; Marco J. Pelk; Koen Buisman; Atef Akhnoukh; Anton De Graauw; Lis K. Nanver

doi:10.1109/JSSC.2006.880586

Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks

W. C.Edmund Neo^*, Yu Lin, Xiao Dong Liu, Leo C.N. De Vreede, Lawrence E. Larson, Marco Spirito, Marco J. Pelk, Koen Buisman, Atef Akhnoukh, Anton De Graauw, Lis K. Nanver

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

154 Citations (Scopus)

Abstract

This paper presents a multi-band multi-mode class-AB power amplifier, which utilizes continuously tunable input and output matching networks integrated in a low-loss silicon-on-glass technology. The tunable matching networks make use of very high Q varactor diodes (Q > 100 @ 2 GHz) in a low distortion anti-series configuration to achieve the desired source and load impedance tunability. A QUBIC4G (SiGe, f _t = 50 GHz) high voltage breakdown transistor (V _CBO = 14 V, V _CEO > 3.6 V) is used as active device. The realized adaptive amplifier provides 13 dB gain, 27-28 dBm output power at the 900, 1800, 1900 and 2100 MHz bands. For the communication bands above 1 GHz optimum load adaptation is facilitated resulting in efficiencies between 30%-55% over a 10 dB output power control range. The total chip area (including matching networks) of the amplifier is 8 mm ²..

Original language	English
Article number	1683908
Pages (from-to)	2166-2176
Number of pages	11
Journal	IEEE journal of solid-state circuits
Volume	41
Issue number	9
DOIs	https://doi.org/10.1109/JSSC.2006.880586
Publication status	Published - 1 Sep 2006
Externally published	Yes

Keywords

Adaptive matching network
Dynamic leadline
High efficiency
Multi-band
Multi-mode
Power amplifier
RF adaptivity

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Neo, W. C. E., Lin, Y., Liu, X. D., De Vreede, L. C. N., Larson, L. E., Spirito, M., Pelk, M. J., Buisman, K., Akhnoukh, A., De Graauw, A., & Nanver, L. K. (2006). Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks. IEEE journal of solid-state circuits, 41(9), 2166-2176. [1683908]. https://doi.org/10.1109/JSSC.2006.880586

Neo, W. C.Edmund ; Lin, Yu ; Liu, Xiao Dong ; De Vreede, Leo C.N. ; Larson, Lawrence E. ; Spirito, Marco ; Pelk, Marco J. ; Buisman, Koen ; Akhnoukh, Atef ; De Graauw, Anton ; Nanver, Lis K. / Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks. In: IEEE journal of solid-state circuits. 2006 ; Vol. 41, No. 9. pp. 2166-2176.

@article{44fda8ce1e064bcab60a8b90843c017a,

title = "Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks",

abstract = "This paper presents a multi-band multi-mode class-AB power amplifier, which utilizes continuously tunable input and output matching networks integrated in a low-loss silicon-on-glass technology. The tunable matching networks make use of very high Q varactor diodes (Q > 100 @ 2 GHz) in a low distortion anti-series configuration to achieve the desired source and load impedance tunability. A QUBIC4G (SiGe, f t = 50 GHz) high voltage breakdown transistor (V CBO = 14 V, V CEO > 3.6 V) is used as active device. The realized adaptive amplifier provides 13 dB gain, 27-28 dBm output power at the 900, 1800, 1900 and 2100 MHz bands. For the communication bands above 1 GHz optimum load adaptation is facilitated resulting in efficiencies between 30%-55% over a 10 dB output power control range. The total chip area (including matching networks) of the amplifier is 8 mm 2..",

keywords = "Adaptive matching network, Dynamic leadline, High efficiency, Multi-band, Multi-mode, Power amplifier, RF adaptivity",

author = "Neo, {W. C.Edmund} and Yu Lin and Liu, {Xiao Dong} and {De Vreede}, {Leo C.N.} and Larson, {Lawrence E.} and Marco Spirito and Pelk, {Marco J.} and Koen Buisman and Atef Akhnoukh and {De Graauw}, Anton and Nanver, {Lis K.}",

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doi = "10.1109/JSSC.2006.880586",

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Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks. / Neo, W. C.Edmund; Lin, Yu; Liu, Xiao Dong; De Vreede, Leo C.N.; Larson, Lawrence E.; Spirito, Marco; Pelk, Marco J.; Buisman, Koen; Akhnoukh, Atef; De Graauw, Anton; Nanver, Lis K.

In: IEEE journal of solid-state circuits, Vol. 41, No. 9, 1683908, 01.09.2006, p. 2166-2176.

Research output: Contribution to journal › Article › Academic › peer-review

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AU - Neo, W. C.Edmund

AU - Lin, Yu

AU - Liu, Xiao Dong

AU - De Vreede, Leo C.N.

AU - Larson, Lawrence E.

AU - Spirito, Marco

AU - Pelk, Marco J.

AU - Buisman, Koen

AU - Akhnoukh, Atef

AU - De Graauw, Anton

AU - Nanver, Lis K.

PY - 2006/9/1

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N2 - This paper presents a multi-band multi-mode class-AB power amplifier, which utilizes continuously tunable input and output matching networks integrated in a low-loss silicon-on-glass technology. The tunable matching networks make use of very high Q varactor diodes (Q > 100 @ 2 GHz) in a low distortion anti-series configuration to achieve the desired source and load impedance tunability. A QUBIC4G (SiGe, f t = 50 GHz) high voltage breakdown transistor (V CBO = 14 V, V CEO > 3.6 V) is used as active device. The realized adaptive amplifier provides 13 dB gain, 27-28 dBm output power at the 900, 1800, 1900 and 2100 MHz bands. For the communication bands above 1 GHz optimum load adaptation is facilitated resulting in efficiencies between 30%-55% over a 10 dB output power control range. The total chip area (including matching networks) of the amplifier is 8 mm 2..

AB - This paper presents a multi-band multi-mode class-AB power amplifier, which utilizes continuously tunable input and output matching networks integrated in a low-loss silicon-on-glass technology. The tunable matching networks make use of very high Q varactor diodes (Q > 100 @ 2 GHz) in a low distortion anti-series configuration to achieve the desired source and load impedance tunability. A QUBIC4G (SiGe, f t = 50 GHz) high voltage breakdown transistor (V CBO = 14 V, V CEO > 3.6 V) is used as active device. The realized adaptive amplifier provides 13 dB gain, 27-28 dBm output power at the 900, 1800, 1900 and 2100 MHz bands. For the communication bands above 1 GHz optimum load adaptation is facilitated resulting in efficiencies between 30%-55% over a 10 dB output power control range. The total chip area (including matching networks) of the amplifier is 8 mm 2..

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