Adatom assisted stabilization of ad dimers on Ge(001)

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Abstract

The early stage of silicon heteroepitaxial growth and germanium homoepitaxial growth on Ge(001) has caused a discrepancy between experimental and theoretical work. Previously a dimer configuration was identified experimentally, which theoretically has been predicted to be unfavorable: the D dimer. Upon careful reinvestigation this cluster turns out to be not a two-atom, but a three-atom cluster. The three-atom cluster of Ge or Si on Ge(001) is shown to differ from a C dimer, a small epitaxial island (BD) or the three-atom cluster of Si on Si(001)
Original languageUndefined
Pages (from-to)1868-1870
Number of pages3
JournalJournal of vacuum science and technology A: vacuum, surfaces, and films
Volume19
Issue number4
DOIs
Publication statusPublished - 2001

Keywords

  • IR-73080
  • METIS-202550

Cite this

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title = "Adatom assisted stabilization of ad dimers on Ge(001)",
abstract = "The early stage of silicon heteroepitaxial growth and germanium homoepitaxial growth on Ge(001) has caused a discrepancy between experimental and theoretical work. Previously a dimer configuration was identified experimentally, which theoretically has been predicted to be unfavorable: the D dimer. Upon careful reinvestigation this cluster turns out to be not a two-atom, but a three-atom cluster. The three-atom cluster of Ge or Si on Ge(001) is shown to differ from a C dimer, a small epitaxial island (BD) or the three-atom cluster of Si on Si(001)",
keywords = "IR-73080, METIS-202550",
author = "E. Zoethout and Zandvliet, {Henricus J.W.} and Bene Poelsema",
year = "2001",
doi = "10.1116/1.1365126",
language = "Undefined",
volume = "19",
pages = "1868--1870",
journal = "Journal of vacuum science and technology A: vacuum, surfaces, and films",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "4",

}

Adatom assisted stabilization of ad dimers on Ge(001). / Zoethout, E.; Zandvliet, Henricus J.W.; Poelsema, Bene.

In: Journal of vacuum science and technology A: vacuum, surfaces, and films, Vol. 19, No. 4, 2001, p. 1868-1870.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Adatom assisted stabilization of ad dimers on Ge(001)

AU - Zoethout, E.

AU - Zandvliet, Henricus J.W.

AU - Poelsema, Bene

PY - 2001

Y1 - 2001

N2 - The early stage of silicon heteroepitaxial growth and germanium homoepitaxial growth on Ge(001) has caused a discrepancy between experimental and theoretical work. Previously a dimer configuration was identified experimentally, which theoretically has been predicted to be unfavorable: the D dimer. Upon careful reinvestigation this cluster turns out to be not a two-atom, but a three-atom cluster. The three-atom cluster of Ge or Si on Ge(001) is shown to differ from a C dimer, a small epitaxial island (BD) or the three-atom cluster of Si on Si(001)

AB - The early stage of silicon heteroepitaxial growth and germanium homoepitaxial growth on Ge(001) has caused a discrepancy between experimental and theoretical work. Previously a dimer configuration was identified experimentally, which theoretically has been predicted to be unfavorable: the D dimer. Upon careful reinvestigation this cluster turns out to be not a two-atom, but a three-atom cluster. The three-atom cluster of Ge or Si on Ge(001) is shown to differ from a C dimer, a small epitaxial island (BD) or the three-atom cluster of Si on Si(001)

KW - IR-73080

KW - METIS-202550

U2 - 10.1116/1.1365126

DO - 10.1116/1.1365126

M3 - Article

VL - 19

SP - 1868

EP - 1870

JO - Journal of vacuum science and technology A: vacuum, surfaces, and films

JF - Journal of vacuum science and technology A: vacuum, surfaces, and films

SN - 0734-2101

IS - 4

ER -