Adatom assisted stabilization of ad dimers on Ge(001)

E. Zoethout; Henricus J.W. Zandvliet; Bene Poelsema

doi:10.1116/1.1365126

Adatom assisted stabilization of ad dimers on Ge(001)

E. Zoethout, Henricus J.W. Zandvliet, Bene Poelsema

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Abstract

The early stage of silicon heteroepitaxial growth and germanium homoepitaxial growth on Ge(001) has caused a discrepancy between experimental and theoretical work. Previously a dimer configuration was identified experimentally, which theoretically has been predicted to be unfavorable: the D dimer. Upon careful reinvestigation this cluster turns out to be not a two-atom, but a three-atom cluster. The three-atom cluster of Ge or Si on Ge(001) is shown to differ from a C dimer, a small epitaxial island (BD) or the three-atom cluster of Si on Si(001)

Original language	Undefined
Pages (from-to)	1868-1870
Number of pages	3
Journal	Journal of vacuum science & technology A: vacuum, surfaces, and films
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1365126
Publication status	Published - 2001

Keywords

IR-73080
METIS-202550

Access to Document

10.1116/1.1365126

Cite this

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title = "Adatom assisted stabilization of ad dimers on Ge(001)",

abstract = "The early stage of silicon heteroepitaxial growth and germanium homoepitaxial growth on Ge(001) has caused a discrepancy between experimental and theoretical work. Previously a dimer configuration was identified experimentally, which theoretically has been predicted to be unfavorable: the D dimer. Upon careful reinvestigation this cluster turns out to be not a two-atom, but a three-atom cluster. The three-atom cluster of Ge or Si on Ge(001) is shown to differ from a C dimer, a small epitaxial island (BD) or the three-atom cluster of Si on Si(001)",

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author = "E. Zoethout and Zandvliet, {Henricus J.W.} and Bene Poelsema",

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pages = "1868--1870",

journal = "Journal of vacuum science & technology A: vacuum, surfaces, and films",

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T1 - Adatom assisted stabilization of ad dimers on Ge(001)

AU - Zoethout, E.

AU - Zandvliet, Henricus J.W.

AU - Poelsema, Bene

PY - 2001

Y1 - 2001

N2 - The early stage of silicon heteroepitaxial growth and germanium homoepitaxial growth on Ge(001) has caused a discrepancy between experimental and theoretical work. Previously a dimer configuration was identified experimentally, which theoretically has been predicted to be unfavorable: the D dimer. Upon careful reinvestigation this cluster turns out to be not a two-atom, but a three-atom cluster. The three-atom cluster of Ge or Si on Ge(001) is shown to differ from a C dimer, a small epitaxial island (BD) or the three-atom cluster of Si on Si(001)

AB - The early stage of silicon heteroepitaxial growth and germanium homoepitaxial growth on Ge(001) has caused a discrepancy between experimental and theoretical work. Previously a dimer configuration was identified experimentally, which theoretically has been predicted to be unfavorable: the D dimer. Upon careful reinvestigation this cluster turns out to be not a two-atom, but a three-atom cluster. The three-atom cluster of Ge or Si on Ge(001) is shown to differ from a C dimer, a small epitaxial island (BD) or the three-atom cluster of Si on Si(001)

KW - IR-73080

KW - METIS-202550

U2 - 10.1116/1.1365126

DO - 10.1116/1.1365126

M3 - Article

SN - 0734-2101

VL - 19

SP - 1868

EP - 1870

JO - Journal of vacuum science & technology A: vacuum, surfaces, and films

JF - Journal of vacuum science & technology A: vacuum, surfaces, and films

IS - 4

ER -