Adatom assisted stabilization of ad dimers on Ge(001)

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Abstract

The early stage of silicon heteroepitaxial growth and germanium homoepitaxial growth on Ge(001) has caused a discrepancy between experimental and theoretical work. Previously a dimer configuration was identified experimentally, which theoretically has been predicted to be unfavorable: the D dimer. Upon careful reinvestigation this cluster turns out to be not a two-atom, but a three-atom cluster. The three-atom cluster of Ge or Si on Ge(001) is shown to differ from a C dimer, a small epitaxial island (BD) or the three-atom cluster of Si on Si(001)
Original languageUndefined
Pages (from-to)1868-1870
Number of pages3
JournalJournal of vacuum science and technology A: vacuum, surfaces, and films
Volume19
Issue number4
DOIs
Publication statusPublished - 2001

Keywords

  • IR-73080
  • METIS-202550

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