The sustainable development of IT-systems requires a quest for novel concepts to address further miniaturization, performance improvement, and energy efficiency of devices. The realization of these goals cannot be achieved without an appropriate functional material. Herein, we target the technologically important electron modification using single polyoxometalate (POM) molecules envisaged as smart successors of materials that are implemented in today's complementary metal-oxide-semiconductor (CMOS) technology. Lindqvist-type POMs were physisorbed on the Au(111) surface, preserving their structural and electronic characteristics. By applying an external voltage at room temperature, the valence state of the single POM molecule could be changed multiple times through the injection of up to 4 electrons. The molecular electrical conductivity is dependent on the number of vanadium 3d electrons, resulting in several discrete conduction states with increasing conductivity. This fundamentally important finding illustrates the far-reaching opportunities for POM molecules in the area of multiple-state resistive (memristive) switching.