TY - JOUR
T1 - Adsorption of atomic and molecular oxygen on Si(100)2x1
T2 - coverage dependence of the Auger O KVV lineshape
AU - Wormeester, H.
AU - Borg, H.J.
AU - Terpstra, D.
AU - Keim, E.G.
AU - van Silfhout, A.
PY - 1991
Y1 - 1991
N2 - By means of Auger electron spectroscopy (AES) we have monitored the room temperature adsorption of O2 and N2O on the clean Si(0 0 1)2 × 1 surface. We have found, for the first time, a significant variation in the intensity ratio of the K L1 L1 and K L23 L23 O Auger lines in the submonolayer range. This variation can be related to a change in bonding configuration of the oxygen atom/molecule in the initial adsorption stage in which the influence of inter-atomic matrix elements of the Auger process cannot be neglected.
AB - By means of Auger electron spectroscopy (AES) we have monitored the room temperature adsorption of O2 and N2O on the clean Si(0 0 1)2 × 1 surface. We have found, for the first time, a significant variation in the intensity ratio of the K L1 L1 and K L23 L23 O Auger lines in the submonolayer range. This variation can be related to a change in bonding configuration of the oxygen atom/molecule in the initial adsorption stage in which the influence of inter-atomic matrix elements of the Auger process cannot be neglected.
U2 - 10.1016/0038-1098(91)90340-2
DO - 10.1016/0038-1098(91)90340-2
M3 - Article
VL - 77
SP - 239
EP - 242
JO - Solid state communications
JF - Solid state communications
SN - 0038-1098
IS - 3
ER -