Adsorption of atomic and molecular oxygen on Si(100)2x1: coverage dependence of the Auger O KVV lineshape

H. Wormeester; H.J. Borg; D. Terpstra; E.G. Keim; A. van Silfhout

doi:10.1016/0038-1098(91)90340-2

Adsorption of atomic and molecular oxygen on Si(100)2x1: coverage dependence of the Auger O KVV lineshape

H. Wormeester
, H.J. Borg
, D. Terpstra
, E.G. Keim
, A. van Silfhout

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

By means of Auger electron spectroscopy (AES) we have monitored the room temperature adsorption of O2 and N2O on the clean Si(0 0 1)2 × 1 surface. We have found, for the first time, a significant variation in the intensity ratio of the K L1 L1 and K L23 L23 O Auger lines in the submonolayer range. This variation can be related to a change in bonding configuration of the oxygen atom/molecule in the initial adsorption stage in which the influence of inter-atomic matrix elements of the Auger process cannot be neglected.

Original language	English
Pages (from-to)	239-242
Number of pages	4
Journal	Solid state communications
Volume	77
Issue number	3
DOIs	https://doi.org/10.1016/0038-1098(91)90340-2
Publication status	Published - 1991

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title = "Adsorption of atomic and molecular oxygen on Si(100)2x1: coverage dependence of the Auger O KVV lineshape",

abstract = "By means of Auger electron spectroscopy (AES) we have monitored the room temperature adsorption of O2 and N2O on the clean Si(0 0 1)2 × 1 surface. We have found, for the first time, a significant variation in the intensity ratio of the K L1 L1 and K L23 L23 O Auger lines in the submonolayer range. This variation can be related to a change in bonding configuration of the oxygen atom/molecule in the initial adsorption stage in which the influence of inter-atomic matrix elements of the Auger process cannot be neglected.",

author = "H. Wormeester and H.J. Borg and D. Terpstra and E.G. Keim and \{van Silfhout\}, A.",

year = "1991",

doi = "10.1016/0038-1098(91)90340-2",

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journal = "Solid state communications",

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T1 - Adsorption of atomic and molecular oxygen on Si(100)2x1

T2 - coverage dependence of the Auger O KVV lineshape

AU - Wormeester, H.

AU - Borg, H.J.

AU - Terpstra, D.

AU - Keim, E.G.

AU - van Silfhout, A.

PY - 1991

Y1 - 1991

N2 - By means of Auger electron spectroscopy (AES) we have monitored the room temperature adsorption of O2 and N2O on the clean Si(0 0 1)2 × 1 surface. We have found, for the first time, a significant variation in the intensity ratio of the K L1 L1 and K L23 L23 O Auger lines in the submonolayer range. This variation can be related to a change in bonding configuration of the oxygen atom/molecule in the initial adsorption stage in which the influence of inter-atomic matrix elements of the Auger process cannot be neglected.

AB - By means of Auger electron spectroscopy (AES) we have monitored the room temperature adsorption of O2 and N2O on the clean Si(0 0 1)2 × 1 surface. We have found, for the first time, a significant variation in the intensity ratio of the K L1 L1 and K L23 L23 O Auger lines in the submonolayer range. This variation can be related to a change in bonding configuration of the oxygen atom/molecule in the initial adsorption stage in which the influence of inter-atomic matrix elements of the Auger process cannot be neglected.

U2 - 10.1016/0038-1098(91)90340-2

DO - 10.1016/0038-1098(91)90340-2

M3 - Article

SN - 0038-1098

VL - 77

SP - 239

EP - 242

JO - Solid state communications

JF - Solid state communications

IS - 3

ER -

Adsorption of atomic and molecular oxygen on Si(100)2x1: coverage dependence of the Auger O KVV lineshape

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