Adsorption of atomic oxygen (N2O) on a clean Ge(001) surface

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Abstract

We present the results of a study concerning the interaction of atomic oxygen (as released by decomposition of N2O ) with the clean Ge(001)2×1 surface at 300 K. Ellipsometry in the photon energy range of 1.5–4 eV, surface conductance measurements and Auger electron spectroscopy(AES) have been used to monitor this solid–gas reaction.Adsorption of N2O on the clean Ge(001) surface was found to terminate at monolayer coverage. As compared to the adsorption of molecular oxygen (O2), we observed in the joint density of states a splitting of the 1.8 eV peak into peaks at 1.7 and 2 eV plus an additional weak shoulder at 2.3 eV. Surface conductance measurements indicate that the adsorption process is dominated by the removal of filled surface states (dimer and dangling bond of the up atom). Atomic oxygen goes into a bridging position between top layer Ge atoms, in the initial stage first by decomposing at the Ge–Ge dimer bonds. The adsorption behavior of N2O at the Ge(001)2×1 surface is similar to that at the closely related Si(001)2×1 surface [Keim e t a l., Surf. Sci. 1 8 0, 565 (1987)]. Our results confirm the site specificity of the N2O molecule.
Original languageEnglish
Pages (from-to)2581-2584
Number of pages0
JournalJournal of vacuum science and technology A: vacuum, surfaces, and films
Volume8
Issue number3
DOIs
Publication statusPublished - 1990

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Oxygen
Adsorption
adsorption
oxygen
Dimers
dimers
Atoms
Dangling bonds
Molecular oxygen
Ellipsometry
Surface states
Auger electron spectroscopy
shoulders
Monolayers
Photons
Auger spectroscopy
ellipsometry
electron spectroscopy
atoms
Decomposition

Keywords

  • IR-24056
  • METIS-128855

Cite this

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title = "Adsorption of atomic oxygen (N2O) on a clean Ge(001) surface",
abstract = "We present the results of a study concerning the interaction of atomic oxygen (as released by decomposition of N2O ) with the clean Ge(001)2×1 surface at 300 K. Ellipsometry in the photon energy range of 1.5–4 eV, surface conductance measurements and Auger electron spectroscopy(AES) have been used to monitor this solid–gas reaction.Adsorption of N2O on the clean Ge(001) surface was found to terminate at monolayer coverage. As compared to the adsorption of molecular oxygen (O2), we observed in the joint density of states a splitting of the 1.8 eV peak into peaks at 1.7 and 2 eV plus an additional weak shoulder at 2.3 eV. Surface conductance measurements indicate that the adsorption process is dominated by the removal of filled surface states (dimer and dangling bond of the up atom). Atomic oxygen goes into a bridging position between top layer Ge atoms, in the initial stage first by decomposing at the Ge–Ge dimer bonds. The adsorption behavior of N2O at the Ge(001)2×1 surface is similar to that at the closely related Si(001)2×1 surface [Keim e t a l., Surf. Sci. 1 8 0, 565 (1987)]. Our results confirm the site specificity of the N2O molecule.",
keywords = "IR-24056, METIS-128855",
author = "Zandvliet, {Henricus J.W.} and Keim, {Enrico G.} and {van Silfhout}, Arend",
year = "1990",
doi = "10.1116/1.576674",
language = "English",
volume = "8",
pages = "2581--2584",
journal = "Journal of vacuum science and technology A: vacuum, surfaces, and films",
issn = "0734-2101",
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number = "3",

}

Adsorption of atomic oxygen (N2O) on a clean Ge(001) surface. / Zandvliet, Henricus J.W.; Keim, Enrico G.; van Silfhout, Arend.

In: Journal of vacuum science and technology A: vacuum, surfaces, and films, Vol. 8, No. 3, 1990, p. 2581-2584.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Adsorption of atomic oxygen (N2O) on a clean Ge(001) surface

AU - Zandvliet, Henricus J.W.

AU - Keim, Enrico G.

AU - van Silfhout, Arend

PY - 1990

Y1 - 1990

N2 - We present the results of a study concerning the interaction of atomic oxygen (as released by decomposition of N2O ) with the clean Ge(001)2×1 surface at 300 K. Ellipsometry in the photon energy range of 1.5–4 eV, surface conductance measurements and Auger electron spectroscopy(AES) have been used to monitor this solid–gas reaction.Adsorption of N2O on the clean Ge(001) surface was found to terminate at monolayer coverage. As compared to the adsorption of molecular oxygen (O2), we observed in the joint density of states a splitting of the 1.8 eV peak into peaks at 1.7 and 2 eV plus an additional weak shoulder at 2.3 eV. Surface conductance measurements indicate that the adsorption process is dominated by the removal of filled surface states (dimer and dangling bond of the up atom). Atomic oxygen goes into a bridging position between top layer Ge atoms, in the initial stage first by decomposing at the Ge–Ge dimer bonds. The adsorption behavior of N2O at the Ge(001)2×1 surface is similar to that at the closely related Si(001)2×1 surface [Keim e t a l., Surf. Sci. 1 8 0, 565 (1987)]. Our results confirm the site specificity of the N2O molecule.

AB - We present the results of a study concerning the interaction of atomic oxygen (as released by decomposition of N2O ) with the clean Ge(001)2×1 surface at 300 K. Ellipsometry in the photon energy range of 1.5–4 eV, surface conductance measurements and Auger electron spectroscopy(AES) have been used to monitor this solid–gas reaction.Adsorption of N2O on the clean Ge(001) surface was found to terminate at monolayer coverage. As compared to the adsorption of molecular oxygen (O2), we observed in the joint density of states a splitting of the 1.8 eV peak into peaks at 1.7 and 2 eV plus an additional weak shoulder at 2.3 eV. Surface conductance measurements indicate that the adsorption process is dominated by the removal of filled surface states (dimer and dangling bond of the up atom). Atomic oxygen goes into a bridging position between top layer Ge atoms, in the initial stage first by decomposing at the Ge–Ge dimer bonds. The adsorption behavior of N2O at the Ge(001)2×1 surface is similar to that at the closely related Si(001)2×1 surface [Keim e t a l., Surf. Sci. 1 8 0, 565 (1987)]. Our results confirm the site specificity of the N2O molecule.

KW - IR-24056

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U2 - 10.1116/1.576674

DO - 10.1116/1.576674

M3 - Article

VL - 8

SP - 2581

EP - 2584

JO - Journal of vacuum science and technology A: vacuum, surfaces, and films

JF - Journal of vacuum science and technology A: vacuum, surfaces, and films

SN - 0734-2101

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ER -