AHE measurements of very thin films and nanosized dots

N. Kikuchi; R. Murillo Vallejo; J.C. Lodder

doi:10.1016/j.jmmm.2004.10.052

AHE measurements of very thin films and nanosized dots

N. Kikuchi, R. Murillo Vallejo, J.C. Lodder

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Abstract

In this paper we present anomalous Hall effect analysis from very thin Co (0.5 nm) film, Co/Pt multilayers and large areas of nanosized dots as well as from a few magnetic dots having a diameter of 120 nm. The dot arrayis prepared from Co/Pt multilayer by using laser interference lithography (LIL) while the Hall crosses for measuring a few dots are prepared in combination with focussed ion beam (FIB). The hysteresis loops from a few dots are showing significant Hall voltage jumps corresponding to magnetic response due to an inhomogeneous reversal mechanism because the intensityof the jumps is smaller than the expected value from a total magnetization reversal of one dot.

Original language	English
Pages (from-to)	320-324
Number of pages	5
Journal	Journal of magnetism and magnetic materials
Volume	287
DOIs	https://doi.org/10.1016/j.jmmm.2004.10.052
Publication status	Published - 2005

Keywords

TST-LIL: Laser Interference Lithography
SMI-TST: From 2006 in EWI-TST
SMI-EXP: EXPERIMENTAL TECHNIQUES
TSTNE-Magnet-AHE: Anomalous Hall Effect

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10.1016/j.jmmm.2004.10.052

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@article{03a5877322894e43afcbca48e259a2f5,

title = "AHE measurements of very thin films and nanosized dots",

abstract = "In this paper we present anomalous Hall effect analysis from very thin Co (0.5 nm) film, Co/Pt multilayers and large areas of nanosized dots as well as from a few magnetic dots having a diameter of 120 nm. The dot arrayis prepared from Co/Pt multilayer by using laser interference lithography (LIL) while the Hall crosses for measuring a few dots are prepared in combination with focussed ion beam (FIB). The hysteresis loops from a few dots are showing significant Hall voltage jumps corresponding to magnetic response due to an inhomogeneous reversal mechanism because the intensityof the jumps is smaller than the expected value from a total magnetization reversal of one dot.",

keywords = "TST-LIL: Laser Interference Lithography, SMI-TST: From 2006 in EWI-TST, SMI-EXP: EXPERIMENTAL TECHNIQUES, TSTNE-Magnet-AHE: Anomalous Hall Effect",

author = "N. Kikuchi and \{Murillo Vallejo\}, R. and J.C. Lodder",

year = "2005",

doi = "10.1016/j.jmmm.2004.10.052",

language = "English",

volume = "287",

pages = "320--324",

journal = "Journal of magnetism and magnetic materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - AHE measurements of very thin films and nanosized dots

AU - Kikuchi, N.

AU - Murillo Vallejo, R.

AU - Lodder, J.C.

PY - 2005

Y1 - 2005

N2 - In this paper we present anomalous Hall effect analysis from very thin Co (0.5 nm) film, Co/Pt multilayers and large areas of nanosized dots as well as from a few magnetic dots having a diameter of 120 nm. The dot arrayis prepared from Co/Pt multilayer by using laser interference lithography (LIL) while the Hall crosses for measuring a few dots are prepared in combination with focussed ion beam (FIB). The hysteresis loops from a few dots are showing significant Hall voltage jumps corresponding to magnetic response due to an inhomogeneous reversal mechanism because the intensityof the jumps is smaller than the expected value from a total magnetization reversal of one dot.

AB - In this paper we present anomalous Hall effect analysis from very thin Co (0.5 nm) film, Co/Pt multilayers and large areas of nanosized dots as well as from a few magnetic dots having a diameter of 120 nm. The dot arrayis prepared from Co/Pt multilayer by using laser interference lithography (LIL) while the Hall crosses for measuring a few dots are prepared in combination with focussed ion beam (FIB). The hysteresis loops from a few dots are showing significant Hall voltage jumps corresponding to magnetic response due to an inhomogeneous reversal mechanism because the intensityof the jumps is smaller than the expected value from a total magnetization reversal of one dot.

KW - TST-LIL: Laser Interference Lithography

KW - SMI-TST: From 2006 in EWI-TST

KW - SMI-EXP: EXPERIMENTAL TECHNIQUES

KW - TSTNE-Magnet-AHE: Anomalous Hall Effect

U2 - 10.1016/j.jmmm.2004.10.052

DO - 10.1016/j.jmmm.2004.10.052

M3 - Article

SN - 0304-8853

VL - 287

SP - 320

EP - 324

JO - Journal of magnetism and magnetic materials

JF - Journal of magnetism and magnetic materials

ER -

AHE measurements of very thin films and nanosized dots

Abstract

Keywords

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