Al-mediated solid-phase epitaxy of silicon-on-insulator

Agata Šakić*, Yann Civale, Lis K. Nanver, Cleber Biasotto, Vladimir Jovanović

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)


Silicon-on-insulator (SOI) regions have been grown on lithographically predetermined positions by Al-mediated Solid-Phase Epitaxy (SPE) of amorphous silicon (α-Si). A controllable Si lateral overgrowth is induced from windows formed in silicon dioxide (SiO2) to the crystalline Si substrate. The resulting hundred-of-nanometer large areas of high-quality monocrystalline SOI are formed at the temperatures that can be as low as 400 °C. The as-obtained SOI regions were found to take on the same crystal orientation as the (lOO)-Si substrate and have the ability to merge seamlessly over the oxide.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010
Number of pages6
Publication statusPublished - 24 Dec 2010
Externally publishedYes
EventMRS Spring Meeting & Exhibit 2010 - San Francisco, United States
Duration: 5 Apr 20109 Apr 2010

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


ConferenceMRS Spring Meeting & Exhibit 2010
Country/TerritoryUnited States
CitySan Francisco
Internet address


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