Al-mediated solid-phase epitaxy of silicon-on-insulator

Agata Šakić; Yann Civale; Lis K. Nanver; Cleber Biasotto; Vladimir Jovanović

doi:10.1557/PROC-1245-A20-03

Al-mediated solid-phase epitaxy of silicon-on-insulator

Agata Šakić^*
, Yann Civale
, Lis K. Nanver
, Cleber Biasotto
, Vladimir Jovanović

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

Abstract

Silicon-on-insulator (SOI) regions have been grown on lithographically predetermined positions by Al-mediated Solid-Phase Epitaxy (SPE) of amorphous silicon (α-Si). A controllable Si lateral overgrowth is induced from windows formed in silicon dioxide (SiO₂) to the crystalline Si substrate. The resulting hundred-of-nanometer large areas of high-quality monocrystalline SOI are formed at the temperatures that can be as low as 400 °C. The as-obtained SOI regions were found to take on the same crystal orientation as the (lOO)-Si substrate and have the ability to merge seamlessly over the oxide.

Original language	English
Title of host publication	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010
Pages	427-432
Number of pages	6
DOIs	https://doi.org/10.1557/PROC-1245-A20-03
Publication status	Published - 24 Dec 2010
Externally published	Yes
Event	MRS Spring Meeting & Exhibit 2010 - San Francisco, United States Duration: 5 Apr 2010 → 9 Apr 2010 https://www.mrs.org/spring2010

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1245
ISSN (Print)	0272-9172

Conference

Conference	MRS Spring Meeting & Exhibit 2010
Country/Territory	United States
City	San Francisco
Period	5/04/10 → 9/04/10
Internet address	https://www.mrs.org/spring2010

Access to Document

10.1557/PROC-1245-A20-03

Cite this

@inproceedings{9c9845ac4abc414f918768bf468fc874,

title = "Al-mediated solid-phase epitaxy of silicon-on-insulator",

abstract = "Silicon-on-insulator (SOI) regions have been grown on lithographically predetermined positions by Al-mediated Solid-Phase Epitaxy (SPE) of amorphous silicon (α-Si). A controllable Si lateral overgrowth is induced from windows formed in silicon dioxide (SiO2) to the crystalline Si substrate. The resulting hundred-of-nanometer large areas of high-quality monocrystalline SOI are formed at the temperatures that can be as low as 400 °C. The as-obtained SOI regions were found to take on the same crystal orientation as the (lOO)-Si substrate and have the ability to merge seamlessly over the oxide.",

author = "Agata {\v S}aki{\'c} and Yann Civale and Nanver, \{Lis K.\} and Cleber Biasotto and Vladimir Jovanovi{\'c}",

year = "2010",

month = dec,

day = "24",

doi = "10.1557/PROC-1245-A20-03",

language = "English",

isbn = "9781605112220",

series = "Materials Research Society Symposium Proceedings",

pages = "427--432",

booktitle = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010",

note = "MRS Spring Meeting \& Exhibit 2010 ; Conference date: 05-04-2010 Through 09-04-2010",

url = "https://www.mrs.org/spring2010",

}

Šakić, A, Civale, Y, Nanver, LK, Biasotto, C & Jovanović, V 2010, Al-mediated solid-phase epitaxy of silicon-on-insulator. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010. Materials Research Society Symposium Proceedings, vol. 1245, pp. 427-432, MRS Spring Meeting & Exhibit 2010, San Francisco, California, United States, 5/04/10. https://doi.org/10.1557/PROC-1245-A20-03

Al-mediated solid-phase epitaxy of silicon-on-insulator. / Šakić, Agata; Civale, Yann; Nanver, Lis K. et al.
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010. 2010. p. 427-432 (Materials Research Society Symposium Proceedings; Vol. 1245).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Al-mediated solid-phase epitaxy of silicon-on-insulator

AU - Šakić, Agata

AU - Civale, Yann

AU - Nanver, Lis K.

AU - Biasotto, Cleber

AU - Jovanović, Vladimir

PY - 2010/12/24

Y1 - 2010/12/24

N2 - Silicon-on-insulator (SOI) regions have been grown on lithographically predetermined positions by Al-mediated Solid-Phase Epitaxy (SPE) of amorphous silicon (α-Si). A controllable Si lateral overgrowth is induced from windows formed in silicon dioxide (SiO2) to the crystalline Si substrate. The resulting hundred-of-nanometer large areas of high-quality monocrystalline SOI are formed at the temperatures that can be as low as 400 °C. The as-obtained SOI regions were found to take on the same crystal orientation as the (lOO)-Si substrate and have the ability to merge seamlessly over the oxide.

AB - Silicon-on-insulator (SOI) regions have been grown on lithographically predetermined positions by Al-mediated Solid-Phase Epitaxy (SPE) of amorphous silicon (α-Si). A controllable Si lateral overgrowth is induced from windows formed in silicon dioxide (SiO2) to the crystalline Si substrate. The resulting hundred-of-nanometer large areas of high-quality monocrystalline SOI are formed at the temperatures that can be as low as 400 °C. The as-obtained SOI regions were found to take on the same crystal orientation as the (lOO)-Si substrate and have the ability to merge seamlessly over the oxide.

UR - https://www.scopus.com/pages/publications/78650395476

U2 - 10.1557/PROC-1245-A20-03

DO - 10.1557/PROC-1245-A20-03

M3 - Conference contribution

AN - SCOPUS:78650395476

SN - 9781605112220

T3 - Materials Research Society Symposium Proceedings

SP - 427

EP - 432

BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010

T2 - MRS Spring Meeting & Exhibit 2010

Y2 - 5 April 2010 through 9 April 2010

ER -

Al-mediated solid-phase epitaxy of silicon-on-insulator

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