AlN thin-film deposition for suppressing surface current losses in RF circuits on high-resistivity silicon

S. B. Evseev; L. K. Nanver; S. Milosavljević

doi:10.1109/BCTM.2013.6798148

AlN thin-film deposition for suppressing surface current losses in RF circuits on high-resistivity silicon

S. B. Evseev, L. K. Nanver, S. Milosavljević

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

Abstract

Thin aluminum nitride (AlN) films, deposited by means of Physical Vapor Deposition (PVD) to a thickness up to 200 nm, are studied as RF passivation layers for transmission lines High Resistivity Silicon (HRS) substrates. Excellent passivation properties are demonstrated by measuring RF losses on coplanar waveguides (CPWs) as well as the space-charge-layer sheet resistance (SCL-R_SH) on specially designed MISFET structures. Compared to oxide interfaces the losses go from a strongly bias-dependent ∼ 10 dB/cm to a bias-independent 1.7 dB/cm for the AlN:Si interfacial layer, corresponding to an increase of SCL-R_SH from ∼ 10⁴ ω/□ to 10⁷ ω/□. The results suggest that a high resistive AlN:Si layer is formed by interdiffusion of the AlN and underlying Si which then conducts the parasitic interface currents.

Original language	English
Title of host publication	2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013
Publisher	IEEE
ISBN (Print)	9781479901265
DOIs	https://doi.org/10.1109/BCTM.2013.6798148
Publication status	Published - 1 Jan 2013
Externally published	Yes
Event	2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013 - Bordeaux, France Duration: 30 Sep 2013 → 3 Oct 2013

Conference

Conference	2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013
Abbreviated title	BCTM 2013
Country	France
City	Bordeaux
Period	30/09/13 → 3/10/13

Keywords

aluminum nitride
argon implantation
high-resistivity silicon
RF losses
surface passivation

Access to Document

10.1109/BCTM.2013.6798148

Link to publication in Scopus

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Cite this

@inproceedings{e6b87dd4643449eb9b0506383f38e77e,

title = "AlN thin-film deposition for suppressing surface current losses in RF circuits on high-resistivity silicon",

abstract = "Thin aluminum nitride (AlN) films, deposited by means of Physical Vapor Deposition (PVD) to a thickness up to 200 nm, are studied as RF passivation layers for transmission lines High Resistivity Silicon (HRS) substrates. Excellent passivation properties are demonstrated by measuring RF losses on coplanar waveguides (CPWs) as well as the space-charge-layer sheet resistance (SCL-RSH) on specially designed MISFET structures. Compared to oxide interfaces the losses go from a strongly bias-dependent ∼ 10 dB/cm to a bias-independent 1.7 dB/cm for the AlN:Si interfacial layer, corresponding to an increase of SCL-RSH from ∼ 104 ω/□ to 107 ω/□. The results suggest that a high resistive AlN:Si layer is formed by interdiffusion of the AlN and underlying Si which then conducts the parasitic interface currents.",

keywords = "aluminum nitride, argon implantation, high-resistivity silicon, RF losses, surface passivation",

author = "Evseev, {S. B.} and Nanver, {L. K.} and S. Milosavljevi{\'c}",

year = "2013",

month = jan,

day = "1",

doi = "10.1109/BCTM.2013.6798148",

language = "English",

isbn = "9781479901265",

booktitle = "2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013",

publisher = "IEEE",

address = "United States",

note = "2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013, BCTM 2013 ; Conference date: 30-09-2013 Through 03-10-2013",

}

Evseev, SB, Nanver, LK & Milosavljević, S 2013, AlN thin-film deposition for suppressing surface current losses in RF circuits on high-resistivity silicon. in 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013., 6798148, IEEE, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013, Bordeaux, France, 30/09/13. https://doi.org/10.1109/BCTM.2013.6798148

TY - GEN

T1 - AlN thin-film deposition for suppressing surface current losses in RF circuits on high-resistivity silicon

AU - Evseev, S. B.

AU - Nanver, L. K.

AU - Milosavljević, S.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Thin aluminum nitride (AlN) films, deposited by means of Physical Vapor Deposition (PVD) to a thickness up to 200 nm, are studied as RF passivation layers for transmission lines High Resistivity Silicon (HRS) substrates. Excellent passivation properties are demonstrated by measuring RF losses on coplanar waveguides (CPWs) as well as the space-charge-layer sheet resistance (SCL-RSH) on specially designed MISFET structures. Compared to oxide interfaces the losses go from a strongly bias-dependent ∼ 10 dB/cm to a bias-independent 1.7 dB/cm for the AlN:Si interfacial layer, corresponding to an increase of SCL-RSH from ∼ 104 ω/□ to 107 ω/□. The results suggest that a high resistive AlN:Si layer is formed by interdiffusion of the AlN and underlying Si which then conducts the parasitic interface currents.

AB - Thin aluminum nitride (AlN) films, deposited by means of Physical Vapor Deposition (PVD) to a thickness up to 200 nm, are studied as RF passivation layers for transmission lines High Resistivity Silicon (HRS) substrates. Excellent passivation properties are demonstrated by measuring RF losses on coplanar waveguides (CPWs) as well as the space-charge-layer sheet resistance (SCL-RSH) on specially designed MISFET structures. Compared to oxide interfaces the losses go from a strongly bias-dependent ∼ 10 dB/cm to a bias-independent 1.7 dB/cm for the AlN:Si interfacial layer, corresponding to an increase of SCL-RSH from ∼ 104 ω/□ to 107 ω/□. The results suggest that a high resistive AlN:Si layer is formed by interdiffusion of the AlN and underlying Si which then conducts the parasitic interface currents.

KW - aluminum nitride

KW - argon implantation

KW - high-resistivity silicon

KW - RF losses

KW - surface passivation

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M3 - Conference contribution

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