AlN thin-film deposition for suppressing surface current losses in RF circuits on high-resistivity silicon

S. B. Evseev, L. K. Nanver, S. Milosavljević

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Abstract

Thin aluminum nitride (AlN) films, deposited by means of Physical Vapor Deposition (PVD) to a thickness up to 200 nm, are studied as RF passivation layers for transmission lines High Resistivity Silicon (HRS) substrates. Excellent passivation properties are demonstrated by measuring RF losses on coplanar waveguides (CPWs) as well as the space-charge-layer sheet resistance (SCL-RSH) on specially designed MISFET structures. Compared to oxide interfaces the losses go from a strongly bias-dependent ∼ 10 dB/cm to a bias-independent 1.7 dB/cm for the AlN:Si interfacial layer, corresponding to an increase of SCL-RSH from ∼ 104 ω/□ to 107 ω/□. The results suggest that a high resistive AlN:Si layer is formed by interdiffusion of the AlN and underlying Si which then conducts the parasitic interface currents.

Original languageEnglish
Title of host publication2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013
PublisherIEEE
ISBN (Print)9781479901265
DOIs
Publication statusPublished - 1 Jan 2013
Externally publishedYes
Event2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013 - Bordeaux, France
Duration: 30 Sep 20133 Oct 2013

Conference

Conference2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013
Abbreviated titleBCTM 2013
CountryFrance
CityBordeaux
Period30/09/133/10/13

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Keywords

  • aluminum nitride
  • argon implantation
  • high-resistivity silicon
  • RF losses
  • surface passivation

Cite this

Evseev, S. B., Nanver, L. K., & Milosavljević, S. (2013). AlN thin-film deposition for suppressing surface current losses in RF circuits on high-resistivity silicon. In 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013 [6798148] IEEE. https://doi.org/10.1109/BCTM.2013.6798148