Abstract
Thin aluminum nitride (AlN) films, deposited by means of Physical Vapor Deposition (PVD) to a thickness up to 200 nm, are studied as RF passivation layers for transmission lines High Resistivity Silicon (HRS) substrates. Excellent passivation properties are demonstrated by measuring RF losses on coplanar waveguides (CPWs) as well as the space-charge-layer sheet resistance (SCL-RSH) on specially designed MISFET structures. Compared to oxide interfaces the losses go from a strongly bias-dependent ∼ 10 dB/cm to a bias-independent 1.7 dB/cm for the AlN:Si interfacial layer, corresponding to an increase of SCL-RSH from ∼ 104 ω/□ to 107 ω/□. The results suggest that a high resistive AlN:Si layer is formed by interdiffusion of the AlN and underlying Si which then conducts the parasitic interface currents.
Original language | English |
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Title of host publication | 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013 |
Publisher | IEEE |
ISBN (Print) | 9781479901265 |
DOIs | |
Publication status | Published - 1 Jan 2013 |
Externally published | Yes |
Event | 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013 - Bordeaux, France Duration: 30 Sept 2013 → 3 Oct 2013 |
Conference
Conference | 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013 |
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Abbreviated title | BCTM 2013 |
Country/Territory | France |
City | Bordeaux |
Period | 30/09/13 → 3/10/13 |
Keywords
- aluminum nitride
- argon implantation
- high-resistivity silicon
- RF losses
- surface passivation