Abstract
We present a surface micromachining process to
fabricate AlN piezoelectric microstructures. The fabrication
process utilizes Si02 sacrificial layer etching with Polysilicon as a structural layer. The significance of the process is that the polysilicon layer is used as a structural as weIl as a bottom electrode layer. A thin layer of Cr is used as a mask layer to etch both the AIN and polysilicon layers, while acting as a top electrode. The fabricated clamped-clamped beam microbridges show compressive stress. Preliminary results using phase-shift interferometry measurements show displacements of 8.3nmN on a typical microbridge with dimensions 385 x 50 /-lm.
Original language | English |
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Title of host publication | Proceedings of the 16th MME MicroMechanics Europe Workshop |
Subtitle of host publication | 4-6 September 2005, Göteborg, Sweden |
Editors | Peter Enoksson |
Place of Publication | Göteborg, Sweden |
Publisher | Trycket AB, Göteborg |
Pages | 320-323 |
Number of pages | 4 |
ISBN (Print) | 9-1631-7553-3 |
Publication status | Published - Sept 2005 |
Event | 16th MicroMechanics Europe Workshop, MME 2005 - Göteborg, Sweden Duration: 4 Sept 2005 → 6 Sept 2005 Conference number: 16 |
Workshop
Workshop | 16th MicroMechanics Europe Workshop, MME 2005 |
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Abbreviated title | MME |
Country/Territory | Sweden |
City | Göteborg |
Period | 4/09/05 → 6/09/05 |
Keywords
- RF reactive sputtering
- Piezoelectric actuator
- Phase-shift interferometry
- Alumnum nitride