AlN thin film unimorph piezoelectric actuators on polysilicon microbridges

S. Saravanan, M. Dijkstra, J.W. Berenschot, G.J.M. Krijnen, M.C. Elwenspoek

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    31 Downloads (Pure)


    We present a surface micromachining process to fabricate AlN piezoelectric microstructures. The fabrication process utilizes Si02 sacrificial layer etching with Polysilicon as a structural layer. The significance of the process is that the polysilicon layer is used as a structural as weIl as a bottom electrode layer. A thin layer of Cr is used as a mask layer to etch both the AIN and polysilicon layers, while acting as a top electrode. The fabricated clamped-clamped beam microbridges show compressive stress. Preliminary results using phase-shift interferometry measurements show displacements of 8.3nmN on a typical microbridge with dimensions 385 x 50 /-lm.
    Original languageEnglish
    Title of host publicationProceedings of the 16th MME MicroMechanics Europe Workshop
    Subtitle of host publication4-6 September 2005, Göteborg, Sweden
    EditorsPeter Enoksson
    Place of PublicationGöteborg, Sweden
    PublisherTrycket AB, Göteborg
    Number of pages4
    ISBN (Print)9-1631-7553-3
    Publication statusPublished - Sep 2005
    Event16th MicroMechanics Europe Workshop, MME 2005 - Göteborg, Sweden
    Duration: 4 Sep 20056 Sep 2005
    Conference number: 16


    Workshop16th MicroMechanics Europe Workshop, MME 2005
    Abbreviated titleMME


    • RF reactive sputtering
    • Piezoelectric actuator
    • Phase-shift interferometry
    • Alumnum nitride


    Dive into the research topics of 'AlN thin film unimorph piezoelectric actuators on polysilicon microbridges'. Together they form a unique fingerprint.

    Cite this