AlN thin film unimorph piezoelectric actuators on polysilicon microbridges

S. Saravanan, M. Dijkstra, J.W. Berenschot, G.J.M. Krijnen, M.C. Elwenspoek

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    Abstract

    We present a surface micromachining process to fabricate AlN piezoelectric microstructures. The fabrication process utilizes Si02 sacrificial layer etching with Polysilicon as a structural layer. The significance of the process is that the polysilicon layer is used as a structural as weIl as a bottom electrode layer. A thin layer of Cr is used as a mask layer to etch both the AIN and polysilicon layers, while acting as a top electrode. The fabricated clamped-clamped beam microbridges show compressive stress. Preliminary results using phase-shift interferometry measurements show displacements of 8.3nmN on a typical microbridge with dimensions 385 x 50 /-lm.
    Original languageEnglish
    Title of host publicationProceedings of the 16th MME MicroMechanics Europe Workshop
    Subtitle of host publication4-6 September 2005, Göteborg, Sweden
    EditorsPeter Enoksson
    Place of PublicationGöteborg, Sweden
    PublisherTrycket AB, Göteborg
    Pages320-323
    Number of pages4
    ISBN (Print)9-1631-7553-3
    Publication statusPublished - Sept 2005
    Event16th MicroMechanics Europe Workshop, MME 2005 - Göteborg, Sweden
    Duration: 4 Sept 20056 Sept 2005
    Conference number: 16

    Workshop

    Workshop16th MicroMechanics Europe Workshop, MME 2005
    Abbreviated titleMME
    Country/TerritorySweden
    CityGöteborg
    Period4/09/056/09/05

    Keywords

    • RF reactive sputtering
    • Piezoelectric actuator
    • Phase-shift interferometry
    • Alumnum nitride

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